Deconvolution of very low primary energy SIMS depth profiles

In this paper, the deconvolution of SIMS profiles analysed at very low primary energy (0.5 keV/O₂⁺) is addressed. The depth resolution function (DRF) of the SIMS analysis in presence of roughness is established and a deconvolution procedure is implemented without or in presence of roughness on samples containing delta-doped layers of boron in silicon. It is shown that the deconvolution procedure can lead to a great improvement of the full width at half maximum (FWHM) of the measured peaks in the case where no roughness in detected in the crater bottom. In the case where it is present, the conditions required to use a deconvolution procedure are discussed, and the deconvolution is implemented using precise and restrictive assumptions.     

Fourth-order problems with fully nonlinear boundary conditions

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M.Riesz定理的注记

设u(z)是单位圆内的实值调和函数 ,若 p_平均Mp(r ,u) =12π∫2π0｜u(reiθ) ｜pdθ1 p <∞ ,则称u(z) ∈hp( 1

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