Microdischarges Near Metal–Insulator Interfaces

Some statistical features of microdischarges running near the metal-insulator interfaces have been discussed. The study has verified an exponential character of statistical distributions of the time intervals between microdischarge pulses, power-law distribution of voltage peaks of these pulses (height of pulses) and very weak correlation effects among pulses, i.e. weak time-height correlation, time autocorrelation and height autocorrelation. A statistical parameter of the power law distribution of the heights of microdischarge pulses proved to be sensitive to the voltage load of the insulating interface metal-insulator.     

Maximum norm stability of difference schemes for parabolic equations on overset nonmatching space-time grids

In this paper, theoretical results are described on the maximum norm stability and accuracy of finite difference discretizations of parabolic equations on overset nonmatching space-time grids. We consider parabolic equations containing a linear reaction term on a space-time domain which is decomposed into an overlapping collection of cylindrical subregions of the form , for . Each of the space-time domains are assumed to be independently grided (in parallel) according to the local geometry and space-time regularity of the solution, yielding space-time grids with mesh parameters and . In particular, the different space-time grids need not match on the regions of overlap, and the time steps can differ from one grid to the next. We discretize the parabolic equation on each local grid by employing an explicit or implicit -scheme in time and a finite difference scheme in space satisfying a discrete maximum principle. The local discretizations are coupled together, without the use of Lagrange multipliers, by requiring the boundary values on each space-time grid to match a suitable interpolation of the solution on adjacent grids. The resulting global discretization yields a large system of coupled equations which can be solved by a parallel Schwarz iterative procedure requiring some communication between adjacent subregions. Our analysis employs a contraction mapping argument.

Applications of the results are briefly indicated for reaction-diffusion equations with contractive terms and heterogeneous hyperbolic-parabolic approximations of parabolic equations.

     

On Logarithmic Smoothing of the Maximum Function

We consider the maximum function f resulting from a finite number of smooth functions. The logarithmic barrier function of the epigraph of f gives rise to a smooth approximation g of f itself, where >0 denotes the approximation parameter. The one-parametric family g converges – relative to a compact subset – uniformly to the function f as tends to zero. Under nondegeneracy assumptions we show that the stationary points of g and f correspond to each other, and that their respective Morse indices coincide. The latter correspondence is obtained by establishing smooth curves x() of stationary points for g , where each x() converges to the corresponding stationary point of f as tends to zero. In case of a strongly unique local minimizer, we show that the nondegeneracy assumption may be relaxed in order to obtain a smooth curve x().     

介质阻挡放电中的能量转换过程研究

研究了介质阻挡放电过程中的电流强度、电场强度以及电荷分布的演变规律，并对能量转换性质进行了分析.研究结果表明，在一个放电脉冲过程中，外加驱动电源所作的功、电场能量的增量均与起始时刻的壁电荷密度有关，而气体中放电电流所作的功即沉积于气体中的能量与起始时刻的壁电荷密度、放电电流的具体波形无关. 关键词： 介质阻挡放电 壁电荷 动力学过程 能量转换     

双势垒磁性隧道结中量子阱共振隧穿效应的第一性原理理论

磁性隧道结材料中自旋相关的量子阱态所导致的共振隧穿现象具有很重要的研究和应用价值，文章介绍了最近在Fe（001）／MgO／Fe／MgO／Fe双势垒磁性隧道结中存在的量子阱共振隧穿效应的理论研究工作，通过量子阱态的第一性原理的计算以及结合对中间Fe薄膜孤岛结构所导致Coulomb阻塞效应的分析，证实了最近Nozaki等人（Nozaki T et al．Phys．Rev．Lett．，2006，96：027208）实验中得到的振荡效应确实来源于中间Fe层多数自旋电子在Г点处形成的△1对称性的量子阱态．Coulomb阻塞效应的存在正是导致实验中低温下量子阱共振隧穿效应不够明显的主要原因．     

一种研究自旋翻转散射效应的新方法

金属中自旋翻转散射长度远长于电子平均自由程，近来关于自旋翻转散射效应的研究主要集中于扩散区域．文章作者提出了一种使用双势垒磁性隧道结来研究纳米尺度结构中弹道区域的自旋翻转散射效应的新方法．这种方法可以从磁电输运性质的测量，得出中间隔离层中的自旋翻转散射效应的温度和偏压关系，进一步可以得出诸如电子平均自由程和自旋翻转散射长度等自旋散射信息，以及中间层的态密度和量子阱信息．     

Electroluminescence efficiency in bilayer organic light-emitting devices with LiF/Al cathode

An analytical model to calculate electroluminescence (EL) efficiency of bilayer organic light-emitting devices, considering the influence of introducing LiF insulating buffer layer at metal/organic interface on the barrier height for electron injection, was presented. The relations of EL efficiency versus the applied voltage and injection barrier or internal interfacial barrier or the thickness of organic layer were discussed. The results indicate that: (1) when δ e/δ h < 2, metal/organic (M/O) interface is ohmic contact; when δ e/δ h > 2, M/O becomes contact limited; and when δ e/δ h = 2 (Φ h ～ 0.2 eV, Φ e ～ 0.3 eV), there is a transition from ohmic contact to contact limited; (2) η EL decreases with the increase of δ′e / δ′h; however, when δ′e / δ′h > 2.5 (H ′h～ 0.2 eV, H ′e～ 0.4 eV), the changes of η EL are very small, which shows that η EL is dominated by the carrier’s injection; (3) when increasing Lh/L, η R has a descending trend at low voltage and a rising one at higher voltage. For a given Lh/L, η EL first increases and then decreases with the increasing applied voltage, and as Lh/L further increases, the variation tendency of η EL is more obvious. These conclusions are in agreement with the reported theoretic and experimental results.     

Deposition of SiOx barrier films by O2/TMDSO RF-PECVD

This paper reports that the SiOx barrier films are deposited on polyethylene terephthalate substrate by plasmaenhanced chemical vapour deposition （PECVD） for the application of transparent barrier packaging. The variations of 02/Tetramethyldisiloxane （TMDSO） ratio and input power in radio frequency （RF） plasma are carried out to optimize barrier properties of the SiOx coated film. The properties of the coatings are characterized by Fourier transform infrared, water vapour transmission rate （WVTR）, oxygen transmission rate （OTR）, and atomic force microscopy analysers. It is found that the 02/TMDSO ratio exceeding 2：1 and the input power over 200 W yield SiOx films with low carbon contents which can be good to the barrier （WVTR and OTR） properties of the SiOx coatings. Also, the film properties not only depend on oxygen concentration of the inlet gas mixtures and input power, but also relate to the surface morphology of the coating.