密封容器中后处理制备Tl2Ba2CaCu2Oy高温超导薄膜及其性能研究

以铝酸镧（001）单晶为基片，采用两步法制备Tl2Ba2CaCu2Oy（Tl 2212）高 温超导薄膜.首先，利用脉冲激光沉积（PLD）工艺沉积Ba2CaCu2Ox非晶前驱体薄膜；然后，前驱体薄膜在高温（720—850℃）下密封钢容器里铊化结晶形成Tl 2212薄膜.XRD结果表明Tl2212 薄膜是沿c轴方向生长的，其相组成为Tl 2212，摇摆曲线（0012）的半高宽为0.72° ，SEM图像显示其表面光滑平整，其零电阻温度为106.2K. 关键词： Tl 2212超导薄膜 脉冲激光沉积     

离子束增强沉积VO2多晶薄膜的温度系数

用改进的离子束增强沉积方法和恰当的退火从V2O5粉末直接制备了VO2多晶薄膜.实验测试表明，薄膜的取向单一、相变特性显著、结构致密、界面结合牢固、工艺性能良好，薄膜的电阻温度系数（TCR）最高可达4.23%/K.从成膜机理出发，较详细地讨论了离子束增强沉积 VO2多晶薄膜的TCR高于VOx薄膜的TCR的原因.分析认为，单一取向的VO2结构使薄膜晶粒具有较高的电导激活能，致密的薄膜结构减少了氧空位和晶界宽度，使离子束增强沉积 VO2多晶薄膜结构比其他方法制备的VOx薄膜更接近于单晶VO2是其具有高TCR的原 关键词： VO2多晶薄膜 离子束增强沉积 热电阻温度系数     

采用空心阴极放电等离子体化学气相沉积方法制备a-CH薄膜

 研究了不同衬底-阴极距离、直流电压和H₂流量对a-CH薄膜沉积速率的影响。结果表明：衬底-阴极距离必须大于0.5cm，随着该距离的增加，薄膜的沉积速率减少；直流电压达550V时沉积速率最大；随着H2含量的增加，CH₄含量相对减少，沉积速率随之降低。用AFM观察了以该方法制得的448.4nm CH薄膜的表面形貌，表面粗糙度约为10nm。最后测出了不同条件下CH薄膜的UV-VIS谱，由此可以计算得到薄膜的禁带宽度及折射率。     

闪烁光纤在γ射线辐照下部分特性的蒙特卡罗模拟

 闪烁光纤在射线成像方面的应用越来越广泛。为了进一步了解闪烁光纤在射线辐照下的基本特性，基于蒙特卡罗方法，利用计算机模拟分析了γ射线在闪烁光纤中的好事例率与光纤长度及射线能量的关系，能量沉积效率与光纤长度及射线能量的关系。此项工作对于闪烁光纤阵列在射线成像，剂量场测量等方面的研究很有价值。     

类铜离子的电子碰撞参数及其规律

用准相对论扭曲波方法系统地计算了Ｂａ、Ｎｄ、Ｇｄ、Ｙｂ、Ａｕ、Ｐｂ类铜离子组态能级之间的电子碰撞激发强度Ω（ｎｌ－ｎｌ），３≤ｎ≤７，４≤ｎ≤７，同时给出了高能极限的碰撞强度和外推到阈值的碰撞强度，用最小二乘样条方法拟合了全能域碰撞强度及热平均速率系数。对于一个激发过程，用１０个参数可以得到碰撞电子在任意能量下的碰撞强度以及任意温度下的速率系数。     

High-density plasma etching of indium-zinc oxide films in Ar/Cl2 and Ar/CH4/H2 chemistries

The dry etching characteristics of transparent and conductive indium-zinc oxide (IZO) films have been investigated using an inductively coupled high-density plasma. While the Cl₂-based plasma mixture showed little enhancement over physical sputtering in a pure argon atmosphere, the CH₄/H₂/Ar chemistry produced an increase of the IZO etch rate. On the other hand, the surface morphology of IZO films after etching in Ar and Ar/Cl₂ discharges is smooth, whereas that after etching in CH₄/H₂/Ar presents particle-like features resulting from the preferential desorption of In- and O-containing products. Etching in CH₄/H₂/Ar also produces formation of a Zn-rich surface layer, whose thickness (∼40 nm) is well-above the expected range of incident ions in the material (∼1 nm). Such alteration of the IZO layer after etching in CH₄/H₂/Ar plasmas is expected to have a significant impact on the transparent electrode properties in optoelectronic device fabrication.     

Low-lying states of 6He studied via the 6Li(t,3He)6He reaction

We present the recent experimental results on the ⁶He structure studied by the ⁶Li(t, ³He)⁶He reaction at 336 MeV. Above the conspicuous peaks for ground and first excited states for ⁶He, we have observed a broad structures at E _x∼ 5 MeV, and E _x∼ 15 MeV. The angular distribution of this structure exhibits the dominance of a ΔL = 1 transition, indicating the existence of intruder dipole states at low excitation energies in ⁶He. A slight admixture of positive-parity states in this structure has been indicated as well. Received: 1 May 2001 / Accepted: 4 December 2001     

Influence of SiO2 in SiCp on the microstructure and impact strength of Al/SiCp composites fabricated by pressureless infiltration

The effect of SiO₂ in SiC_p and the following processing parameters on the microstructure and impact strength of Al/SiC_p composites fabricated by pressureless infiltration was investigated: Mg content in the aluminum alloy, SiC particle size, and holding time. Preforms of SiC_p in the form of rectangular bars (10 × 1 × 1 cm) were infiltrated at 1150°C in an argon→nitrogen atmosphere for 45 and 60 min by utilizing two aluminum alloys (Al-6 Mg-11 Si and Al-9 Mg-11 Si, wt.%). The results obtained show that the presence of SiO₂ in SiC affects the microstructure and impact strength of the composites significantly. When Al₄C₃ is formed, the impact strength decreases. However, a high proportion of SiC to SiO₂ limits the formation of the unwanted Al₄C₃ phase in the composites. Also, a higher content of Mg in the Al alloy lowers the residual porosity and, consequently, increases the composite strength. The impact strength grows with decrease in SiC particle size and increases considerably when the residual porosity is less than 1%. Russian translation published in Mekhanika Kompozitnykh Materialov, Vol. 42, No. 3, pp. 401–418, May–June, 2006.     

Residual currents and corridor of flow in the Rio de la Plata

The Rio de la Plata is a large and shallow water body that discharges onto the Atlantic Ocean. The main driving forces for the river flow are the bathymetry, tides, the outflow from the Paraná and Uruguay rivers and the winds. A numerical model covering the entire river was set up with the objective of increasing our understanding of the hydrographical features and morphological dynamics in the Estuary. The simulations revealed a counter-clockwise residual circulation in the Samborombón Bay and an eastward net flow near the Uruguayan coast. The residual flow is forced by both the tides and the bathymetry. The residence time for the entire river ranges from 40 to 80 days. However, residence times above 120 days was found in the Samborombón Bay. Three corridors of flow have been identified.     

Organic SIMS with single massive gold projectile: Ion yield enhancement by silver metallization

The yield of CN from glycine rises from one CN per projectile impact to two when the sample is covered with a nominally 1 nm thick layer of silver. These yields were obtained for bombardment with Au₄₀₀⁴⁺ projectile with 136 keV impact energy. A multitude of CN-based clusters, e.g. Ag_xO_y(CN)_z are produced concurrently. As a result, a total of three CN-based secondary ions are generated per projectile impact. The exceptionally high yield for CN is of interest for biological SIMS.