CHN薄膜的制备方法与工艺研究

 采用空心阴极等离子化学气相沉积方法，以NH₃/H₂的混合气体及CH4气体为原料反应气体，成功地制备了非晶的CHN薄膜，研究了CHN薄膜的沉积速率与直流电压及反应气体流量的关系。同时用X射线光电子能谱(XPS)确定了不同条件下薄膜中N原子的百分比，用原子力显微镜(AFM)对薄膜的表面粗糙度及表面形貌进行了测量和表征。结果表明：薄膜中N原子的百分比最大为12%，薄膜的表面结构光滑、致密，表面粗糙度小于1 nm。     

YbF3沉积速率对红外激光薄膜表面缺陷的影响

 在介绍了薄膜缺陷的特点及成因的基础上，分析了YbF₃沉积速率对红外激光薄膜表面缺陷密度的影响，得出了镀制激光薄膜所需的合适速率。结果表明：薄膜表面缺陷主要以节瘤缺陷与陷穴缺陷为主，其缺陷密度随YbF₃沉积速率的减小基本表现为减小的趋势，当ZnS沉积速率约为0.2 nm/s，YbF₃沉积速率约为0.4 nm/s时，可得到比较满意的激光薄膜，薄膜表面缺陷密度仅为0.000 675。     

PLD方法制备的纳米Fe/Al薄膜的结构及应力分析

 采用PLD方法制备了Fe/Al合金薄膜，研究了Fe/Al合金薄膜的物相、结构、应力等。研究表明薄膜的沉积速率随着衬底温度的升高而降低。原子力显微镜（AFM）图像显示，薄膜表面平整、致密且光滑，均方根粗糙度小于1 nm。等离子体发射谱（ICP）表明Fe/Al原子比为1∶1。X射线小角衍射（XRD）分析表明薄膜中的物相是Al_0.5Fe_0.5，Al_0.5Fe_0.5晶体具有简单立方结构(SC)，晶格常数为0.297 nm，平均晶粒尺寸为81.74 nm，平均微畸变为0.007 6。     

NaF薄膜的脉冲激光沉积法制备与结构研究

 采用脉冲激光沉积(PLD)方法在Si(100)衬底上制备了NaF薄膜。在激光重复频率2 Hz，能量密度3 J/cm²，本底真空度5×10^-5 Pa的条件下，研究衬底温度对薄膜沉积速率及结构的影响。台阶仪分析表明：薄膜的沉积速率随衬底温度增加呈指数函数增加，算出NaF薄膜的反应激活能为48.67 kJ/mol。原子力显微镜分析表明：薄膜致密而光滑，均方根粗糙度为0.553 nm。扫描电镜截面微观形貌分析表明：薄膜呈现柱状结构。X射线衍射分析表明：NaF薄膜为面心立方晶体结构，并具有显著的择优取向；当衬底温度约为400 ℃时，平均晶粒尺寸最大(129.6 nm)，晶格微应变最小(0.225%)。     

SiH4/H2等离子体气相生长硅薄膜的动力学模型

在化学气相沉积微晶硅薄膜过程中,为了降低成本,必须提高生长速率,但薄膜的微观结构和光电性能则随之降低,原因是成膜先驱物在薄膜表面上的扩散长度降低了. 本文利用量子化学的反应动力学理论建立有关成膜先驱物SiH₃和H的反应平衡方程,求解薄膜生长速率和成膜先驱物的扩散长度,并找出影响生长速率与扩散长度的微观参数,发现生长速率不仅与流向衬底的SiH₃的通量密度有关,而且与H的通量密度有关;SiH₃的扩散长度与衬底温度和薄膜表面的硅氢键的形态有关,当     

蒸发条件对碘化铅多晶薄膜结构的影响

采用真空蒸发法在普通玻璃上制备了PbI₂多晶薄膜.研究了蒸发速率、蒸发源与衬底距离、薄膜厚度以及衬底温度等实验条件对所制备PbI₂多晶薄膜结构的影响.利用X射线衍射仪和扫描电子显微镜对样品进行了测试.结果表明，在衬底温度为室温时得到(001)择优取向的多晶PbI₂薄膜，即沿c轴垂直衬底方向取向生长的薄膜.当衬底温度升高时，薄膜的择优取向逐渐由(001)转向(003)，且晶体颗粒变大.薄膜中的内应力随衬底温度的升高而降低.     

α-C:H膜表面形貌及光学性能的测试分析

 以H₂和反式-2-丁烯（T₂B）为工作气体，利用低压等离子体增强化学气相沉积法制备了α-C:H薄膜。采用原子力显微镜、扫描电镜测试了α-C:H薄膜的表面形貌，分析了实验参数对其形貌的影响。研究表明：固定压强(15 Pa)，当T₂B/H₂流量比为4时，薄膜均方根粗糙度可达0.97 nm。保持T2B/H2流量比固定，增加工作气压，薄膜均方根粗糙度减小，表面更平整、致密。利用傅里叶变换红外光谱仪对薄膜价键结构进行分析，结果表明：α-C:H薄膜中主要存在sp3C—H键，氢含量较高；T₂B/H₂流量比越低，薄膜中含有更多的C=C键。应用UV-VIS光谱仪，获得了波长在200～1 100 nm范围内薄膜的光吸收特性，α-C:H薄膜透过率可达98%，计算得到的折射率在1.16～1.40。随工作气压的增加，α-C:H薄膜中sp³杂化键增多，透过率、折射率增大。     

生长初期Ta膜的表面动态演化行为

用磁控溅射方法在单晶Si衬底上沉积膜厚为15—250nm的Ta膜.基于原子力显微镜获得的薄膜表面形貌，用动力学标度理论量化表征薄膜表面动态演化行为.结果表明：当膜厚d<50nm时，薄膜生长指数β≈0.17，而d>50nm后β≈0.45；随着d增加，粗糙度指数α由0.24逐渐增加到0.69，且在d>50nm后趋于稳定.Ta膜的表面动态演化行为揭示了其由小岛聚合结构向连续膜演化的生长过程.与自阴影等非局域效应引起的非稳定行为不同的是，当d<50nm时，薄膜表面动态演化的非稳定行为来源于生长初期的小岛聚合，表面小岛沿膜面切向的生长优于沿法向的生长.随着d继续增加，薄膜以连续膜形式生长，表面动态演化趋于稳定.     

对基于磁控溅射方法沉积的HfO2薄膜的紫外光学特性及薄膜结构的研究

本文基于磁控溅射方法,功率从160 W增加到240 W,在石英衬底上沉积氧化铪薄膜(HfO₂),并对沉积后的薄膜进行退火处理. 利用X射线衍射谱、X射线光电子能谱、紫外-可见-近红外透射谱和椭圆偏振仪对HfO₂薄膜进行研究,对比了退火前后HfO₂薄膜的光学特性及薄膜结构的变化. 实验结果显示,HfO₂薄膜对波长大于200 nm的入射光具有很低的吸收系数. 优化退火温度和时间,可以将沉积后的HfO₂薄膜从非晶态转化成多晶态. 退火有助于结晶生成和内应力的增加,同时退火可以优化薄膜的化学计量比,提升薄膜的光学密度及折射率. 对功率在220 W左右沉积的薄膜进行退火,获得的HfO₂薄膜具有较高并且稳定的光学折射率(>2)和紫外光透射率,可在紫外波段减反膜系统中得到应用.     

N掺杂ZnO薄膜的荧光特性研究

以N₂为掺杂源,通过改变O₂∶N₂比,利用射频磁控溅射法在玻璃衬底上制备了具有[002]择优取向的N掺杂ZnO薄膜,研究了ZnO薄膜的光致发光谱随着N掺入量的不同而变化的规律.结果表明,薄膜主衍射峰为402 nm处的发光峰;由于N掺杂量的不同,有的薄膜在445 nm和524 nm处也有发光发存在,但随着薄膜N含量的不同,其发光峰强度明显不同,其峰位也发生了相应的红移或者蓝移.当O₂∶N₂为10∶15时,制备的薄膜N掺杂量最大,光学性能最好,此工艺为研究ZnO薄膜的缺陷类型及导电类型提供了重要的研究参考.     

磁控反应溅射制备择优取向氮化铝薄膜

以氮气为反应气体，采用磁控反应溅射方法制备了择优取向的氮化铝薄膜．通过XRD测试发现．靶基距、溅射气压影响薄膜的择优取向：大的靶基距及高的溅射气压利于（100）面择优取向，小的靶基距和低的溅射气压利于（002）面择优取向．通过对沉积速率的分析发现．高的沉积速率利于（002）面择优取向，低的沉积速率利于（100）面择优取向．研究结果表明：沉积速率影响了核在衬底表面的生长方向，从而影响了各晶面的生长速度．最终决定薄膜的择优取向．     

OES study of the gas phase during diamond films deposition in high power DC arc plasma jet CVD system

This paper used optical emission spectroscopy (OES) to study the gas phase in high power DC arc plasma jet chemical vapour deposition (CVD) during diamond films growth processes. The results show that all the deposition parameters (methane concentration, substrate temperature, gas flow rate and ratio of H₂/Ar) could strongly influence the gas phase. C₂ is found to be the most sensitive radical to deposition parameters among the radicals in gas phase. Spatially resolved OES implies that a relative high concentration of atomic H exists near the substrate surface, which is beneficial for diamond film growth. The relatively high concentrations of C₂ and CH are correlated with high deposition rate of diamond. In our high deposition rate system, C₂ is presumed to be the main growth radical, and CH is also believed to contribute the diamond deposition.     

An atomically controlled Si film formation process at low temperatures using atmospheric-pressure VHF plasma

To grow epitaxial Si films with atomic- and electronic-level perfection, a high-temperature chemical vapor deposition (CVD) process (>1000 °C) has been generally employed. To reduce the growth temperature below 600?°C but keeping a high deposition rate, other energy sources than thermal heating are required. Atmospheric pressure plasma CVD (AP-PCVD) is considered to be suitable for fabricating high-quality films at high deposition rates due both to the high radical density and to the low ion bombardment against the film surface, because the collision frequency among ions and neutral atoms is high. The present study focuses on the low-temperature growth of epitaxial Si, and experimentally demonstrates that AP-PCVD is capable of growing epitaxial Si films with high perfection applicable for semiconductor devices. It is found that the pre-growth cleaning of the Si surface by H(2) AP plasma is effective to grow high-purity Si films, and that the exposure of a film-growing surface to AP plasma during growth is important to form particle-free and defect-free Si films. From the experimental results and the first-principles molecular dynamics simulations of surface atomic reactions, it can be mentioned that both H atoms in the AP plasma and high-density He atoms having thermal kinetic energy contribute to the reduction of growth temperature by supplying considerable energy to the surface.     

Preparation of few-layer graphene-capped boron nanowires and their field emission properties

Large-area boron nanowire(BNW) films were fabricated on the Si(111) substrate by chemical vapor deposition(CVD). The average diameter of the BNWs is about 20 nm, with lengths of 5–10 μm. Then, graphene-capped boron nanowires(GC-BNWs) were obtained by microwave plasma chemical vapor deposition(MPCVD). Characterization by scanning electron microscopy indicates that few-layer graphene covers the surface of the boron nanowires. Field emission measurements of the BNWs and GC-BNW films show that the GC-BNW films have a lower turn-on electric field than the BNW films.     

立方氮化硼薄膜的生长特性与粘附性研究

用X射线衍射技术、红外吸收光谱、扫描电子显微镜、X射线光电子能谱对热丝辅助射频等离子体化学汽相沉积法制备的立方氮化硼(c-BN)薄膜的生长特性和粘附性进行了研究.改变生长条件，在Si、不锈钢和Ni衬底上沉积c-BN薄膜，进而研究了c-BN薄膜的质量和生长条件与衬底之间的关系.实验发现，Ni衬底上生长的薄膜c-BN含量较高，且粘附性好.当Si衬底上溅射一层Ni过渡层，再生长c-BN薄膜，薄膜中c-BN含量提高，与Si衬底的粘附性也显著增强. 关键词：     

Deposition of a-C:H films in a dc glow discharge with a magnetron plasma localized near the anode

A multielectrode CVD system having a region of crossed magnetic and electric fields is used for the deposition of a-C:H films in a dc glow-discharge plasma. The I-V characteristics of the discharge are taken in the pressure range from 0.004 to 0.1 Pa. The effect of magnetic field on the I-V characteristics is investigated. The film deposition rate as a function of discharge power, hydrocarbon vapor pressure, conductivity and potential of the substrate, and inert gas is studied. The results obtained are discussed in terms of the adsorption mechanism of film condensation in a plasma. The effect of deposition rate on the film properties is analyzed.     

磁控溅射制备氧化硅薄膜生长速率

氧化硅薄膜是半导体工业中常见的薄膜材料,通常采用化学气相沉积方法制备。但是这种制备方法存在缺欠。采用磁控溅射的方法首先在石英衬底上制备了氧化硅薄膜。研究了射频功率、氧气含量和溅射压强对氧化硅薄膜沉积速率的影响。发现沉积速率随着射频功率的增加而增加;随着氧气含量的增加,先减小后增大;当溅射压强在0.4~0.8 Pa之间变化时,沉积速率变化很小,当溅射压强超过0.8 Pa时沉积速率迅速下降。讨论了不同生长条件下造成氧化硅薄膜生长速率变化的原因。     

Titanium Oxide Film Deposition on Acrylic Resin by Atmospheric TPCVD

A dye-sensitized solar cell (DSC) is a solar cell that uses an anatase film as a photovoltaic device. Since the anatase film and dye play the roles of electron carrier and electron generator, respectively, in the DSC, porous anatase films are desirable. In this paper, in order to develop a low-cost fabrication process for the photovoltaic device of the DSC, photocatalytic titanium oxide film deposition was carried out by atmospheric thermal plasma CVD. Ar gas, which served as the working gas for the plasma jet and substrate, and a 20 $times$ 40 $times$ 3 mm transparent acrylic resin plate were used. Titanium tetra iso butoxide was used as feedstock. Consequently, by cooling the substrate, an anatase-dominant film could be deposited at 773 K in deposition temperature without meltdown of the substrate on the condition of 100 mm in deposition distance, even in the case of acrylic resin substrate use. By wettability and methylene-blue decoloration tests, it was confirmed that the film showed hydrophilic and decolored methylene blue perfectly by 8-h UV irradiation. Furthermore, the DSC in which the titanium oxide film deposited by this technique was included as a photovoltaic device generated a photoelectromotive force of 25 mV. From these results, these thermal plasma processes were found to have high potential for DSC fabrication.      

高质量高取向(100)面金刚石膜的可控性生长

应用微波等离子体化学气相沉积技术, 在低气压下对(100)晶面金刚石膜的表面形貌、质量、取向和生长率进行了可控性生长研究. 结果表明: 基片温度与甲烷浓度对(100)晶面金刚石膜的生长存在耦合规律. 为了获得表面形貌相似的(100)晶面金刚石膜, 在沉积过程中, 增加碳源浓度的同时需要同时升高基片温度; 当甲烷浓度为3.0%, 基片温度从740 ℃上升至1100 ℃ 的过程中, 金刚石膜的晶面取向变化可分为五个阶段, 其中当基片温度在860 ℃至930 ℃时, 很适合高取向(100)晶面金刚石膜生长; 另外, 金刚石膜的质量和生长速率分别与基片温度和甲烷浓度成正比. 为了获得高质量高取向(100)晶面金刚石膜, 应当选择合适的基片温度和甲烷浓度.     

Fabrication of hollow thin films of yttria-stabilized zirconia by chemical vapor infiltration using NiO as oxygen source

Deposition of yttria-stabilized zirconia films on surface oxidized Ni wire substrate by chemical vapor infiltration (CVI) using ZrCl₄ and YCl₃ as metal sources and NiO as oxygen source were studied. The resultant films were cubic crystals of YSZ with a Y₂O₃ content of 1.0–3.7 mol%. The growth rate is larger than that obtained by conventional method of chemical vapor deposition (CVD), increased with the flow rate and decreased with diameter of NiO fiber. The growth rate above its thickness of 4 μm decreased with an increase in the oxidation temperature since the porosity of NiO wire might decrease with an increase in the oxidation temperature. Growth of YSZ films with the CVI method simultaneously involved CVD and electrochemical vapor deposition (EVD).