离子阱中以声子为媒介的多体量子纠缠与逻辑门

高保真度的多离子纠缠和量子逻辑门是离子阱量子计算的基础.在现有的方案中, M?lmer-S?rensen门是比较成熟的实现多离子纠缠和量子逻辑门的实验方案.近年来,还出现了通过设计超快激光脉冲序列,在Lamb-Dicke区域以外实现超快量子纠缠和量子逻辑门的方案.这些方案均借助离子链这一多体量子系统的声子能级来耦合离子之间的自旋状态,并且均通过调制激光脉冲或设计合适的脉冲序列解耦多运动模式,来提高纠缠门的保真度.本文从理论和实验层面分析了这些多体量子纠缠和量子逻辑门操作的关键技术,揭示了离子阱中利用激光场驱动离子链运动态,通过非平衡过程中的非线性相互作用,来实现量子逻辑门的基本物理过程.     

基于交叉相位调制效应的硅基全光Fredkin门

虽然传统的Fredkin门可以很好地实现相应的逻辑功能,但是其消光比和串扰还有待进一步改善。鉴于此,本文提出并设计一种基于交叉相位调制效应的硅基全光Fredkin门,该全光可逆逻辑门由两个2×2的定向耦合器、一个2×1的定向耦合器、一个1×2的定向耦合器以及两个相移臂构成。利用泵浦光与信号光在相移臂中引发的交叉相位调制效应,可以改变上、下相移臂中信号光的相位差,从而在所设计器件的不同端口处输出不同幅度的光波,继而实现Fredkin门的逻辑功能。与此同时,利用MATLAB并融入分步傅里叶法对所设计的硅基全光Fredkin门进行仿真分析。仿真结果表明,器件的最差消光比可达48.46 dB。     

以耦合量子点体系模块构造量子逻辑非门

我们使用处于居里温度附近的耦合量子点体系模块,并利用旋进磁场与其相互作用,构造一个二能级量子体系,使用驻波形式的电磁激励使其发生拉比振荡.由于该量子体系在统计力学上本质是一个纯粹系综,通过控制电磁激励作用时间的手段,我们可以实现一个输出信号易于被磁强计检测的量子逻辑非门.特别地,该量子逻辑门具备一定抗干扰性质.     

Two Feasible Schemes for Preparing Cluster States with Ion-Trap Setup

We present two schemes for preparing cluster states with atomic qubits in an ion-trap system. In the first scheme an auxiliary atomic level is needed. While in the second scheme an additional classical driven field is used, and the multi-ion cluster states can be generated by one step. Both the schemes are insensitive to thermal motion of the ions, all the facilities used in them are well within state of the art.     

Approximate Toffoli Gate Originated from a Single Resonant Interaction of Cavity Dissipation and Atomic Spontaneous Emission

We propose a potentially practical scheme to implement an approximate three-qubit Toffoli gate by a single resonant interaction in dissipative cavity QED in which the cavity mode decay and atomic spontaneous emission are considered. The scheme does not require two-qubit controlled-NOT gates but uses a three-qubit phase gate and two Hadamard gates, where the approximate phase gate can be implemented by only a single dissipative resonant interaction of atoms with the cavity mode. Discussions are made for the advantages and the experimental feasibility of our scheme.     

Note on Implementation of Three-Qubit SWAP Gate

In this paper, the synthesis and implementation of three-qubit SWAP gate is discussed. The three-qubit SWAP gate can be decomposed into product of 2 two-qubit SWAP gates, and it can be realized by 6 CNOT gates. Research illustrated that although the result is very simple, the current methods of matrix decomposition for multi-qubit gate can not get that. Then the implementation of three-qubit SWAP gate in the three spin system with Ising interaction is investigated and the sequence of control pulse and drift process to implement the gate is given. It needs 23 control pulses and 12 drift processes. Since the interaction can not be switched on and off at will, the realization of three-qubit SWAP gate in specific quantum system also can not simply come down to 2 two-qubit SWAP gates.     

基于互补输出的三变量通用阈值逻辑门CRM展开函数查表设计

介绍了在或-同或系统中逻辑函数的CRM展开与分类,给出了基于逻辑函数CRM展开的三变量函数P分类表、接线顺序表.讨论了互补输出通用阈值逻辑门及其设计方法.提出了CRM展开的P分类代表函数的接线方案表.在此基础上,提出了基于互补输出的三变量通用阈值逻辑门的任意三变量CRM展开函数的查表设计方法.通过若干设计实例,证明了此方法的有效性.     

磁通门磁强计激励电路的分段解析模型

针对数值仿真方法中存在不易掌握各个元件参数如何影响激励电流的问题,本文在磁芯磁化曲线折线模型的基础上,采用等效电阻替代磁滞效应的方法建立了磁滞回线模型,依此化简激励电路并进行分段解析求解.该方法的计算结果与实际测试相吻合,能为激励电路参数设计提供有效的方法.     

Novel deep—submicron x—ray lithography process for T—shaped gate patterns

The growing interest in the use of Gallium Arsenids semiconductor materials has presented many opportunities for device operational speed improvements but has also presented many problems for the device maker,A novel deep-submicron x-ray lithography process for T-shaped gate patterns useful for high-electron-mobility transistors(HEMT) is introduced in this work.In the fabrication of T-shaped gate a therr layer resists method is used.The x-ray exposure experiments were finished by Beijing Synchrotron Radiation Facility(BSRF) 3B1A beamline,and good result has been obtained.     

激光对分子振动态的控制与量子Fredkin逻辑门

基于激光相干合成分子的局域模振动态,提出利用激光对分子振动态的控制实现量子Fredkin逻辑门的功能,并对方案的特点及可行性进行分析.