Resonantly Enhanced Continuous-Wave Four-Wave Mixing in a Five-Level Cold Atomic Medium

Using Schroedinger-Maxwell formalism, we propose and analyse a cw four-wave mixing (FWM) scheme for the generation of coherent light in a five-level double-∧ atomic system based on electromagnetically induced transparency. We derive the corresponding explicit analytical expressions for the generated FWM field. The influence of hyperfine sublevel on the amplitude of the generated FWM field is predicted in detail. We also give a brief discussion on the experimental realization of the proposed scheme.     

理想的胰岛素晶体

在自然界或实验室内 ,“理想化”总是一个难以实现的概念 .但最近美国休斯顿大学的P .Vekilov教授及其同事们发现 ,他们常常可以将胰岛素晶体生长成理想的晶体形式 .他们让胰岛素蛋白质在一个已有的胰岛素晶体的螺旋位错缺陷处进行生长 ,蛋白质将绕着这个缺陷发生晶化并形成一个理想晶状胰岛素 .这是因为螺旋位错常常使晶层间产生一个微小的角度偏差 .对于大多数的晶体来说 ,晶层间的相互作用能促进晶体生长时界面间的配置 ,并导致晶层阶跃发生束缚和形成一个有条纹的晶体 .除此之外 ,在溶液中输入被溶解物质也能引起晶层阶跃的约束 .胰岛…     

金属材料分析方法的选择和施行第三讲钢铁中钼的测定(续)

(4)对离子交换分离-8-羟基喹啉重量法测钼的解说 在早年的ASTM标准方法中,α-安息香肟重量法及硫化钼沉淀重量法被采纳为钢铁及合金中高含量钼的测定方法。但从1988年以后的修订标准方法(即E351,E352,E353及E354)中对钼量w(Mo)>1.5％的试样均采用离子交换分离-8-羟基     

Effects of External Electric Field on Ferroelectric Superlattice with Two Alternating Layers

The effects of the external electric field on the ferroelectric superlattice with two alternating layers have been studied using the transverse Ising model based on the effective-field theory with the differential technique. The hysteresis loops and susceptibility of the system have been given. The stronger the external electric field, the smaller the susceptibility, reflecting that the polarization is weaker.     

Recombination Efficiency in Double-Layer Organic Light-Emitting Devices

We analyse the influence of properties of organic/organic interface (OOI) on the characteristics of recombination efficiency of organic double-layer light-emitting diodes. Based on the disordered hopping theory model, spatial and energetic disorder of hopping states are also discussed for the case of space charge limited currents in hole transmitting layers but injection-limited currents in electron transporting layers. The results show that the recombination efficiency increases firstly and then decreases for different OOI parameters, and there is a maximum value changed with different spatial disorder parameters and energetic disorder scale. Different spatial disorder parameters make carrier mobilities change greatly, and the energetic disorder scale causes various localized state densities. Our calculated results are qualitatively in agreement with the experimental data.     

Giant Magneto-Impedance of Co50Ni22Ga28 Alloy with High Chemical Ordering

The microstructure of CosoNi22Ga28 ribbon with the L10 structure is examined. The band-like morphology is observed. These bands with the width in a range of 40-200 nm appear along the transverse direction of the ribbon. The giant magnetoimpedance （GMI） effect in this alloy is measured. The results show that Co5oNi22Ga28 exhibits a sharp peak of the GAI effect. The maximum GAH ratio up to 360% is detected. The GMI effect measured versus temperature shows large jumps of the magnetoimpedance amplitude at the reversal martensitic transformation temperature 240℃ and Curie temperature 375℃C respectively. The jump ratios of the magnetoimpedance amplitude examined at these temperatures are about 5 and 10, respectively.     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.     

介质靶表面的充电效应对等离子体浸没离子注入过程中鞘层特性的影响

针对等离子体浸没离子注入技术在绝缘体表面制备硅薄膜工艺，采用一维脉冲鞘层模型描述介质靶表面的充电效应对鞘层厚度、注入剂量及靶表面电位等物理量的影响.数值模拟结果表明：随着等离子体密度的增高，表面的充电效应将导致鞘层厚度变薄、表面电位下降以及注入剂量增加，而介质的厚度对鞘层特性的影响则相对较小. 关键词： 等离子体浸没离子注入 脉冲鞘层 绝缘介质 充电效应     

快冷Fe_(71)Al_(29)合金中的两个内耗峰

用一个计算机控制的倒扭摆研究了快冷Fe71 Al2 9合金中的两个内耗峰 .在快冷的Fe71 Al2 9样品中分别在 180℃(P1 ) ,340℃ (P2 )和 5 10℃ (P3)出现了内耗峰 ,而在慢冷的Fe71 Al2 9样品中只发现了P3峰 .快冷样品中的P1 和P2峰在从 6 5 0℃冷却下来的测量过程中或在 35 0℃经过较长时间的时效后消失 ,其峰高随时效时间的增加而下降 ,直至消失 .P1 和P2 峰都有弛豫特征 ,它们的激活能分别为 :H1 =1.0 3± 0 .0 8eV(P1 峰 ) ;H2 =1.6 4± 0 .0 5eV(P2 峰 ) .P1 峰被认为是无序合金中Al原子在四面体点阵内的最近邻运动所引起 ,P2 峰则是无序合金中Al原子在四面体点阵内的次近邻运动所引起     

激光限制结晶技术制备nc-Si/SiO2多层膜

在等离子体增强化学气相淀积系统中，采用aSi:H层淀积和原位等离子体氧化相结合的逐层生长技术制备了aSi:H/SiO_2多层膜.在激光诱导限制结晶原理基础上，使用KrF准分子脉冲激光为辐照源，对aSi:H/SiO_2多层膜进行辐照，使纳米级厚度的aSi:H子层晶化.Raman散射谱和电子衍射谱的结果表明，经过激光辐照后纳米Si颗粒在原始的aSi:H子层内形成，晶粒尺寸可以根据aSi:H层的厚度精确控制.还研究了样品的光致发光（PL）特性以及激光辐照能量密度对PL性质的影响. 关键词： 脉冲激光 多层膜 限制结晶