直接由SiO_2低温合成含硅聚氨酯及其结构表征

有机硅材料是一类应用非常广泛的材料,但这些产品所用基本原料几乎都来源于石英沙(SiO2)的高温碳热还原[1],这个方法已大规模的工业化,但它的高能耗、高腐蚀成为人们越来越关注的问题.1991年美国Laine[2]直接以SiO2为原料成功地制备了五配位、六配位有机硅化合物,并进一步合成了导电材料和高性能陶瓷[3～7].我们实验室自1995年以来,在Laine的基础上,发现如果以沙子为原料,则产率非常低,即使在超声波作用下,反应一周合成的五配位硅化合物其产率不足10%,这可能是由于沙子的晶型非常完美,在200℃下很难打破Si-O键生成配位硅,如果以无定型SiO2为原料(如白碳黑,稻壳灰等),合成的五配位硅其产率几乎为100%,而且反应时间缩短为4h.然后以高活性的五配位硅为原料制备了一系列的含硅有机物,如与环氯丙烷反应[8],不仅消除了五配位硅化合物的水解可逆性反应,中和了它的强碱性,而且把环氧基团接到了配位硅化合物上,生成了一种非常类似于液态环氧树脂的淡黄色的粘稠状液体.我们按Laine的路线,向含硅聚合物方向发展[9].本文合成的双羟基四配位硅单体是五配位硅钾化合物向含硅聚合物转化的关键,由于其结构带有两个活泼羟基,可以和二元酰氯、二元羧酸、二异氰酸酯、导氰酸酯基封端的聚醚或异氰酸酯基封端的聚酯进行缩聚反应,合成主连含硅的聚合物.     

配位有机硅在聚醚氨酯中的应用

研究了直接从无定型二氧化硅出发,与乙二醇、氢氧化钾反应,生成高反应活性的五配位硅钾络合物,并以此为原料与2－氯乙醇反应制备双羟基四配位有机硅单体,该单体作为扩连剂再与异氰酸酯基封端的聚醚或聚酯进行低温溶液缩聚反应合成含硅聚醚氨酯,经红外光谱,热重分析,胶渗透色法测定分子量等对合成的物质作了结构表征,热重分析表明该聚合物的耐热性能有所提高,胶渗透色谱法测定分子量高于10万。     

有机硅建筑材料

概述了有机硅在建材工业中作为涂料、助剂、密封胶和防粘剂及防水剂的组成、种类、发展及其应用     

多孔硅表面的激光解吸离子化质谱

多孔硅表面的解吸离子化质谱是一种新的生物质谱分析方法。克服了MALDI-TOF-MS中的基体干扰,适合进行了小分子分析。提出了新的样品制备方法,可以扩大测定范围,消除吸附杂质的干扰。发现该方法与多孔硅的光致光特性及表面疏水性无关。具有纳米结构的多孔硅作为该方法中能量的接收器。利用DIOS方法分析了氨基酸、肽、蛋白、糖等样品。此方法用于环糊精合成产物的分析,也得到了较好的结果。     

超大规模集成电路硅片溶液清洗技术的进展

本文综述了超大规模集成电路制造过程中硅片溶液清洗技术的研究历史及现状, 并对技术的未来发展进行了展望。     

Controlling growth of aligned carbon nanotubes from porous silicon templates

Fabricating well-aligned carbon nanotubes, especially, on a silicon substrate is very important for their applications. In this paper, an aligned carbon nanotube array has been prepared by pyrolysis of hydrocarbons catalyzed by nickel nanoparticles embedded in porous silicon (PS) templates. High-magnification transmission electron microscopy images confirm that the nanotubes are well graphitized. The PS substrates with pore sizes between 10 and 100 nm play a control role on the growth of carbon nanotubes and the diameters of the tubes increase with the enlargement of the pores of the substrates. However, such a control role cannot be found in the macro-PS substrates.     

Kinetic analysis of photoelectrochemical hydrogen evolution over p-type silicon in acidic aqueous solutions of electrolytes

The kinetics of photoelectrochemical hydrogen evolution at p-Si single crystals in acidic aqueous solutions of electrolytes under pulse photoexcitation was studied. Despite a low stability of the silicon surface under the experimental conditions, a distinct interrelation between the characteristic time of interfacial charge transfer and stationary current was found. The determination of the characteristic transfer time does not need the detailed elaboration of generation-recombination processes in the semiconductor. The steady-state current density was shown to be determined both for the dark current and photocurrent by the surface charge density. Published inIzvestiya Akademii Nauk. Seriya Khimicheskaya, No. 10, pp. 1724–1728, October, 2000.     

多孔硅表面钝化对其发光性能的影响

报道多孔硅（PS）的表面钝化对其光致发光（PL）和电致发光（EL）的影响。PL和EL谱表明,经钝化处理的PS的PL和EL强度明显增强,且发光峰位较大蓝移;存放实验表明,经钝化处理的PS的PL和EL发光强度和发光峰位具有较好的稳定性;I～V曲线显示,经钝化处理的PS发光器件具有较低的启动电压。这些结果表明：用钝化处理的方法是提高PS的PL和EL强度和稳定性及改善其器件性能的有效途径。     

反应烧结碳化硅复合材料的磨损机理研究

采用销－盘摩擦磨损试验机考察了反应烧结碳化硅及含Ｎｉ碳化硅复合材料在不同温度下的干摩擦磨损性能。结果表明,Ｎｉ有利于改善反应烧结碳化硅复合材料的摩擦磨损性能。ＳＥＭ磨损表面和亚表面分析表明,复合材料在常温下的磨损机理为削和犁沟;６００℃下反应烧结碳化硅的磨损机理为表面裂纹形成及断裂;而含Ｎｉ碳化硅复合材料的磨损机理为亚表面裂纹扩展导致表面局部剥落。     

Infrared Spectroscopic Analysis of Plasma-Treated Si(100)-Surfaces

 Infrared reflection spectroscopy (specular reflection, attenuated total reflection) has been applied in combination with spectroscopic ellipsometry and electron microscopy to analyze the surface structure of plasma-treated Si(100) surfaces. It is shown that plasma treatments in oxygen and fluorine or chlorine-containing gases cause the formation of a thin surface layer having thicknesses of a few nanometers. The layer was identified to consist of SiO₂ for treatments in an oxygen plasma. Analyses of layers formed by treatments in a fluorine-containing plasma do not confirm the generally assumed model. Different Si-F vibration modes were identified in the surface layer caused by a SF₆ plasma. They correlate, however, with SiF and SiF₂ molecules. There are no indications of the existence of the generally assumed SiF₄. Neither has SiOF₂ been proven in layers produced by etching in a SF₆/O₂ plasma.