运用量子约束动力学对具有耗散的量子位的追踪控制

在有限温度环境内，量子约束动力学及其追踪控制可使退相干系统的相干性稳定一段时间.约束方程产生的控制场能够按量子比特的动力学状态进行控制(量子动力学轨道的反馈控制)；依靠量子比特的这种反馈效应，可使量子位稳定在设定的时间内.同时，在量子位的稳定方面，温度扮演一种消极的角色. 关键词： 量子约束动力学 耗散量子位的控制 追踪控制 量子比特的反馈效应     

如何提高课堂教学效果

就如何提高课堂教学效果做了一些探讨。     

Homohelicity induction of propylene-linked zinc bilinone dimers by complexation with chiral amine and α-amino esters. Preorganization of structurally coupled homohelical subunits

Homohelicity induction of a series of propylene-linked zinc bilinone (ZnBL; linear tetrapyrrople-zinc(II) complex) dimers upon complexation with chiral amine and α-amino esters was investigated. Introduction of substituents such as dimethyl and diisobutyl to the central carbon of the propylene spacer gave rise to stabilization of the homohelical (PP and MM) conformers rather than the heterohelical (PM) conformer. As bulkiness of the substituent increased, stability of the homohelical conformers was raised. The preorganization of the homohelical structures led to significantly amplified homohelicity induction upon complexation with chiral amine and α-amino esters.     

Unified Model for Generation Complex Networks with Utility Preferential Attachment

In this paper, based on the utility preferential attachment, we propose a new unified model to generate different network topologies such as scale-free, small-world and random networks. Moreover, a new network structure named super scale network is found, which has monopoly characteristic in our simulation experiments. Finally, the characteristics ofthis new network are given.     

多普勒效应测试仪的改进

为了解决电磁波多普勒效应在实验室演示的困难，采用单片机和一系列大规模集成电路设计了一种演示电磁波多普勒效应的测试仪器，分析了电磁波的多普勒效应原理，给出了该仪器的组成结构，介绍了该仪器铁特点。     

CdSe和ZnO量子点的拉曼光谱研究

本文介绍了用拉曼光谱研究CdSe和ZnO两种Ⅱ Ⅳ族量子点材料的结果,对拉曼峰进行了指认。观察到的光学声子峰位的移动被认为是由量子限制效应引起。     

Stress-Strain State in the Zone of Load Transfer in a Composite Specimen under Uniaxial Tension

The stress-strain state in the zone of load transfer in a uniaxially stretched specimen made of a unidirectional epoxy carbon-fiber-reinforced plastic (CFRP) is investigated. A parametric analysis of the influence of geometric and mechanical characteristics of the specimen on its stress-strain state is performed by means of finite-element modeling. The parameters allowing us to significantly reduce the dangerous concentration of transverse and tangential stresses are revealed. The mechanical tensile characteristics of a high-strength pultruded unidirectional CFRP are determined experimentally, and the size effect of its strength is estimated.     

Experimental investigation of time-dependent cavitation in an oscillatory squeeze film

The occurrence of time-dependent cavitation and tensile stress in an oscillatory oil squeeze film were investigated experimentally. The test apparatus was a simple thrust bearing consisting of two parallel circular plates separated by a thin viscous oil film. During the test, one plate was at rest while the other (transparent) oscillated in a direction normal to its surface. This test configuration was chosen to avoid the rotational motion and complicated geometry of a squeeze film journal bearing. The frequency of oscillation was in the range of 5 to 50 Hz and was controlled by an electro-magnetic exciter. The process of cavity formation and its subsequent development was recorded by a high-speed video camera. Concomitant pressure in the oil film was measured both within and without the cavitation region. It was found that both tensile stress and cavities existed in a squeeze film under certain working conditions.     

Pump–probe second harmonic generation study of ultrafast spin dynamics in semiconductor multilayers

We report the first application of pump–probe second harmonic generation (SHG) measurements to characterize optically induced magnetization in non‐magnetic multilayer semiconductors. In the experiment, spin‐polarized electrons are excited selectively by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the resulting net magnetization manifests itself through the induced SHG probe signal from the GaSb/InAs interface, thus indicating a spin‐polarized electron transport across the heterostructure. We find that the magnetization dynamics are governed by an interplay between the spin density evolution at the interfaces and the spin relaxation. Copyright © 2003 John Wiley & Sons, Ltd.     

浮栅ROM器件辐射效应机理分析

分析了浮栅ROM器件的辐射效应机理，合理地解释了实验中观察到的现象.指出辐射产生的电子空穴对在器件中形成的氧化物陷阱电荷和界面陷阱电荷是导致存储单元及其外围电路出现错误的原因.浮栅ROM器件的中子、质子和⁶⁰Co γ辐射效应都是总剂量效应 . 关键词： FLASH ROM EEPROM 中子 质子 60Co γ')" href="#">⁶⁰Co γ 总剂量效应