| Abstract: | We report the first application of pump–probe second harmonic generation (SHG) measurements to characterize optically induced magnetization in non‐magnetic multilayer semiconductors. In the experiment, spin‐polarized electrons are excited selectively by a pump beam in the GaAs layer of GaAs/GaSb/InAs structures. However, the resulting net magnetization manifests itself through the induced SHG probe signal from the GaSb/InAs interface, thus indicating a spin‐polarized electron transport across the heterostructure. We find that the magnetization dynamics are governed by an interplay between the spin density evolution at the interfaces and the spin relaxation. Copyright © 2003 John Wiley & Sons, Ltd. |
