Nd-Fe-B磁体烧结过程晶粒长大行为的研究

定量描述了Nd-Fe-B磁体烧结过程晶粒长大行为，分析了烧结温度、烧结时间、合金粉末粒度及其分布对烧结过程晶粒长大的影响，讨论了烧结过程晶粒长大机制。在Nd-Fe-B磁体烧结过程开始之后的0—1h时间区段，晶粒长大迅速；随着烧结时间的延长，晶粒长大速度减小。合金粉末平均粒度增大，或者合金粉末粒度分布范围增宽，显著促进Nd-Fe-B磁体烧结过程中晶粒的长大。在Nd-Fe-B磁体的烧结过程中，存在两类晶粒长大机制，即Nd2Fe14B颗粒的溶解与析出、Nd2Fe14B颗粒的并合与长大。Nd2Fe14B颗粒的并合与长大不仅使磁体的平均晶粒尺寸增大，也使晶粒尺寸分布范围增宽，是烧结Nd-Fe-B磁体显微组织中出现异常大晶粒的根本原因。     

Synthesis and Structure of Mixed Ba12F19ClδBr5–δ Crystals

In the structure Ba₁₂F₁₉Cl₅ [hexagonal space group P6 2m] the two chlorides on the sites Cl(1) and Cl(2) can partially be replaced by bromide ions. Single crystals of the type Ba₁₂F₁₉Cl_δBr_5–δ with a chloride to bromide ratio up to 2 : 3 could be obtained by cooling a flux of 75 mol% BaF₂ and 25 mol% BaX₂ with X = Cl, Br. The crystal quality decreases with increasing bromide concentration. Structural parameters of five selected single crystals with different chloride/bromide ratio were studied by single crystal X-ray diffraction methods. The refined total Cl^?/Br^? population ratio in the crystals is close to the one of the flux. The lattice parameters and interatomic distances change in various ways, when the smaller chloride ion is replaced by the bigger bromide ion. The refinements show a statistical disorder on the halide sites with preferential bromide substitution on site Cl(1).     

Solid-state synthesis, structural variants and transformation of three-dimensional sulfides, AGaSnS4 (A=Na, K, Rb, Cs, Tl) and Na1.263Ga1.263Sn0.737S4

New cubic-AGaSnS₄ (A=Na, K, Rb, Cs, Tl) and orthorhombic-NaGaSnS₄ compounds were synthesized by solid-state reactions and characterized by X-ray diffraction and diffuse reflectance spectroscopy. Single crystals of orthorhombic-Na_1.263Ga_1.263Sn_0.737S₄ were obtained in the crystal growth attempts of sodium compound. All six new compounds have orthorhombic AgGaGeS₄ and cubic BaGa₂S₄ structures, as determined from single crystal X-ray structures of Na_1.263Ga_1.263Sn_0.737S₄ and cubic-AGaSnS₄ (A=Na, K, Rb). Orthorhombic-NaGaSnS₄ and known layered-KGaSnS₄ undergo structural transformation to thermodynamically stable cubic form.     

Growth transition and morphology change in polypropylene

The growth rate of isotactic polypropylene is deduced from microscopic observations during isothermal crystallizations. A change in the growth regime is observed at 138 C and interpreted as a Regime III Regime II transition, according to Hoffman's kinetic theory of polymer crystallization. A Regime II Regime I transition is also theoretically predicted at 155 C, i. e. at a temperature outside the investigated temperature range. The Regime III Regime II transition is related to the positive to negative change in the spherulite birefringence, which is generally attributed to a change in the organization of crystalline lamellae: quadritic arrays of intercrossing lamellae atT _c < 138 C (Regime III) and preferentially radiating lamellae atT _c > 138 C (Regime II). It is suggested that such a morphological change could be interpreted using the concept of non-adjacent re-entry introduced in Hoffman's kinetic theory. This interpretation could also explain the interspherulitic ruptures observed in negative spherulites.     

Studying Cu2–xSe phase transformation through DSC examination

The thermal effect accompanying the transition of Cu_2–xSe into a superionic conduction state was studied by non-isothermal measurements, at different heating and cooling rates (β=1, 2.5, 5, 10 and 20°C min^–1). During heating the peak temperature (T_p) remains almost stable for all values of β, (136.8±0.4°C for Cu₂Se and 133.0±0.3°C for Cu_1.99Se). A gradual shift of the initiation of the transformation towards lower temperatures is observed, as the heating rate increases. During cooling there is a significant shift in the position of the peak maximum (T_p) towards lower temperatures with the increase of the cooling rate. A small hysteresis is observed, which increases with the increase of the cooling rate, β. The mean value of transformation enthalpy was found to be 30.3±0.8 J g^–1 for Cu₂Se and 28.9±0.9 J g^–1 for Cu_1.99Se. The transformation can be described kinetically by the model f(ǯ)=(1–ǯ)^n(1+kcatX), with activation energy E=175 kJ mol^–1, exponent value n equal to 0.2, logA=20 and log(k_cat)= 0.5.     

Linked crystallites in the conducting topmost layer of polymer bilayer films controlled by temperature: from micro- to nanocrystallites.

Temperature has great impact on the structure and size of the linked crystallites of the conducting topmost layer formed at the surface of a polycarbonate film via the reaction BEDT-TTF+IBr [BEDT-TTF=bis(ethylenedithio)tetrathiafulvalene]. We show that fine temperature control permits formation of a semiconducting topmost layer of alpha'-(BEDT-TTF)(2)(I(x)Br(1-x))(3) crystallites with either micro- or nanometre size, a result that opens a route to miniaturized conducting plastic materials.     

铁氰化锰修饰玻碳电极的制备及其电化学性能

A thin film of manganese hexacyanoferrate （MnHCF） was electrochemically formed on a glassy carbon （GC） electrode to prepare a chemically modified electrode （CME）. The mechanism of film formation of MnHCF and its growth process were investigated in detail by cyclic voltammetry. The results show that the stoichiometric composition of MnHCF is Mn^ⅢFe^Ⅲ（CN）6, an analogue of prussian yellow. There exist three clear-cut stages in the whole modification process and the last stage is indispensable to the fabrication of homogenized, stable MnHCF film and must last for an appropriate time. The surface morphology of MnHCF/GC electrode was characterized by scanning electron microscopy （SEM）, which further verified the effective deposition of MnHCF film on GC. The kinetic constants of MnHCF/GC electrode process were also evaluated. The resulting MnHCF film modified electrode presented good stability and high electrocatalytic activity toward the oxidation of H2O2, indicating that MnHCF film possesses function of catalase and can be expected for analytical purposes.     

溶胶-凝胶法制备高取向Bi4Ti3O12/SrTiO3(100)薄膜

Bi4Ti3O12具有良好的铁电、电光等性能山、特别是Bi4Ti3O12薄膜很适合作永久性存储材料，也可用于电光器件问．在微电子学、光电子学、集成光学、集成铁电学等领域均有广泛开发和应用前景，国外已用溅射法、激光沉积法制备出c轴取向Bi。Ti3Ol。薄膜【’，＼山东大学用MOCVD法制     

水热合成MoO3纳米带的生长机理研究

以离子交换法制备的氧化钼溶胶为前驱体，在水热条件下制备了单晶MoO₃纳米带，对样品进行了XRD、SEM和TEM分析。通过考察水热反应温度和时间对产物结构和形貌的影响，结合材料热力学和动力学理论，探讨了MoO₃纳米带在水热条件下的生长机理。离子交换法制备的溶胶在水热条件下首先转变为热力学亚稳相h-MoO₃六角柱，随着温度的升高和时间的延长，h-MoO₃按照溶解-重结晶过程转变为稳定相α-MoO₃纳米带。     

LB膜诱导Ba(NO3)2晶体取向生长

In this work, Ba(NO₃)₂ crystals with single crystal face were induced by using the the method of bio-mimetic mineralization and double LB films of behenic acid (BA) as the template. The crystals were characterized by Scanning Electron Microscope (SEM) and X-Ray Diffraction (XRD). The crystals were observed in regular square shape with uniform size about 5～8 μm by SEM, and they were found by XRD to grow along the (111) plane. From these experiments, we can conclude that the good selection of the (111) crystal face of Ba(NO₃)₂ is due to the electrostatic interactions , the match between this crystal face and the definite lattice structure of the LB films.