前端接触势垒高度对非晶硅和微晶硅异质结太阳电池的影响

运用AMPS-1D（Analysis of Microelectronic and Photonic Structures） 程序系统分析了前端接触（铟锡氧化物）的势垒分别对非晶硅和微晶硅太阳电池性能的影响,比较了两种影响的差异并分析了具体原因. 研究表明：与微晶硅相比,非晶硅受铟锡氧化物功函数Φ_ITO的影响更加显著. 随着Φ_ITO的增加非晶硅的各项物理性能（如太阳电池效率、填充因子等）得到明显改善,而微晶硅的各项参数虽然也随Φ_ITO增加而改变,但更容易趋于饱和. 模拟结果显示,在实际的太阳电池装备过程中可根据前端电极的性能来选择合适的p型硅材料. 关键词： 铟锡氧化物 非晶硅 微晶硅 计算机模拟     

椭圆偏振技术研究VHF-PECVD高速沉积微晶硅薄膜的异常标度行为

采用VHF-PECVD技术高速沉积了不同生长阶段的微晶硅薄膜,通过椭圆偏振技术研究了生长过程中微晶硅薄膜表面粗糙度的演化.实验结果表明,沉积气压P_g=300 Pa时,β=0.81,其超出标度理论中β最大值为0.5范围,出现异常标度行为.这表明微晶硅薄膜高速生长中还存在其他粗糙化增加的因素,此粗糙化增加的因素与阴影作用有关. 关键词： 微晶硅薄膜 椭偏光谱法 生长机制 表面粗糙度     

偶氮胂Ⅲ-镝(Ⅲ)反射散射光度法测定蛋白质

研究了微晶石蜡吸萃蛋白质—偶氮胂Ⅲ-镝(Ⅲ)复合物的条件,并设计了固相反射散射分光光度直接测定石蜡相中牛血清白蛋白(BSA)的方法,所拟定的方法有较好的选择性,可以用于25—300μg／25mLBSA的测定．     

Influence of ignition condition on the growth of silicon thin films using plasma enhanced chemical vapour deposition

The influences of the plasma ignition condition in plasma enhanced chemical vapour deposition (PECVD) on the interfaces and the microstructures of hydrogenated microcrystalline Si (μc-Si:H) thin films are investigated. The plasma ignition condition is modified by varying the ratio of SiH₄ to H₂ (R_H). For plasma ignited with a constant gas ratio, the time-resolved optical emission spectroscopy presents a low value of the emission intensity ratio of Hα to SiH^* (I_Hα/I_SiH^*) at the initial stage, which leads to a thick amorphous incubation layer. For the ignition condition with a profiling R_H, the higher I_Hα/I_SiH^* values are realized. By optimizing the R_H modulation, a uniform crystallinity along the growth direction and a denser μ c-Si:H film can be obtained. However, an excessively high I_Hα/I_SiH^* may damage the interface properties, which is indicated by capacitance-voltage (C-V) measurements. Well controlling the ignition condition is critically important for the applications of Si thin films.     

pH值对微波水热法制备γ-MnS微晶形貌及光学性能的影响

采用微波水热法,分别以氯化锰和硫代乙酰胺为锰源和硫源,在不同的pH条件下合成了γ-MnS微晶.利用X射线衍射仪(XRD),扫描电子显微镜(SEM),场发射扫描电子显微镜(FESEM),透射电子显微镜(TEM)对样品的物相组成和微观形貌,粒径大小进行了表征.结果表明:在pH大于6时均能合成出结晶性较好的纤锌矿结构γ-MnS,随着pH的增大,产量提高,产物的粒径逐渐变小且自组装为球状微晶,粒径为0.5μm,利用紫外-可见吸收光谱分析(UV),自组装γ-MnS微晶球在300 ～400 nm处出现了较强的吸收峰,其光学带隙随着pH的增大而减小,在光电领域具有潜在的应用.     

Hydrolysis of Microcrystalline Cellulose to Produce Fermentable Monosaccharides by Plasma Acid

Plasma acid was obtained by treating distilled water with a dielectric barrier discharge (DBD) at atmospheric pressure. The tentative relationship between discharge conditions and pH value of the plasma acid was investigated. In order to optimize the hydrolysis conditions of microcrystalline cellulose with the plasma acid, an orthogonal experiment was carried out and the colorimetric determination of 3,5-dinitro-salicylic acid was applied to measure the concentration of total reduced sugar (TRS). The results showed that the pH value of the plasma acid was related to the discharge time. The acidity of the plasma acid was maintained for several hours and then faded gradually. The microcrystalline cellulose was hydrolyzed effectively by the plasma acid and the optimal hydrolysis conditions were as follows: pH 1.42 of the plasma acid, hydrolysis temperature of 80°C and hydrolysis time of 60 min. Under these conditions, the microcrystalline cellulose with polymerization degree of 200–300 was hydrolyzed completely to produce monosaccharides, including xylose and glucose with the mole ratio of 1:35, as shown by high-performance liquid chromatography (HPLC) analysis. Moreover, the hydrolysis of luffa cellulose with polymerization degree of 500–600 was also carried out. The luffa cellulose was hydrolyzed completely to produce monosaccharides including xylose, mannose and glucose with mole ratio of 6.7:1:218. Therefore, it could be concluded that the main hydrolysis product of both types of cellulose was glucose. The glucose yield of microcrystalline cellulose was 46%, whereas for luffa cellulose it was 41%. This method was an environmentally friendly and effective method to hydrolyze cellulose.     

分步法高速沉积微晶硅薄膜

为提高微晶硅薄膜的纵向结晶性能, 在甚高频等离子体增强化学气相沉积技术的基础上, 采用过渡参数缓变和两步法相结合的方法在普通玻璃衬底上高速沉积薄膜. 当功率密度为2.1 W/cm², 硅烷浓度在6%和9.6%之间变化时, 从薄膜方向和玻璃方向测算的Raman晶化率的差异维持在2%以内. 硅烷浓度为9.6%时, 薄膜沉积速率可达3.43 nm/s, 从薄膜方向和玻璃方向测算的Raman晶化率分别为50%和48%, 差异的相对值仅为4.0%. 合理控制过渡阶段的参数变化, 可使两个方向的Raman晶化率差值下降到一个百分点. 表明采用新方法制备薄膜, 不仅可以抑制非晶孵化层的形成, 改善微晶硅薄膜的纵向结构, 还为制备优质薄膜提供了较宽的参数变化空间. 关键词： 微晶硅薄膜 非晶孵化层 高速沉积 甚高频等离子体增强化学气相沉积     

The study of amorphous incubation layers during the growth of microcrystalline silicon films under different deposition conditions

<正>The structural un-uniformity of μc-Si:H films prepared using a very high frequency plasma-enhanced chemical vapour deposition method has been investigated by Raman spectroscopy,spectroscopic ellipsometer and atomic force microscopy.It was found that the formation of amorphous incubation layer was caused by the back diffusion of SiH_4 and the amorphous induction of glass surface during the initial ignition process,and growth of the incubation layer can be suppressed and uniformμc-Si:H phase is generated by the application of delayed initial SiH_4 density and silane profiling methods.     

微晶酚酞-乙基紫分离富集镉(Ⅱ)

微晶酚酞-乙基紫分离富集镉(Ⅱ);微晶酚酞;乙基紫;分离富集;镉(Ⅱ)     

硅烷浓度对微晶硅太阳电池的影响

采用甚高频等离子化学气相沉积技术(VHF-PECVD)制备了系列p-i-n型微晶硅太阳电池,研究了电池有源层硅烷浓度的变化对电池性能的影响.结果发现:随着硅烷浓度的提高电池的短路电流密度先提高然后降低,转换效率与之有相同的变化趋势,而开路电压随硅烷浓度的提高而增加,这些变化来源于有源层材料结构的改变.电池的填充因子几乎不受硅烷浓度的影响,但受前电极的影响很大.不同系列电池转化效率的最高点虽然处于非晶到微晶的过渡区,但对应电池的晶化率不同.另外,研究结果也给出非晶/微晶过渡区随着辉光功率的提高和沉积气压的降低向高硅烷浓度方向转移.