Photoelectron spectroscopic study of Li oxides on Li over-deposited V2O5 thin film surfaces

The Li oxides species formed on Li over-deposited V₂O₅ thin film surfaces have been studied by using X-ray and UV induced photoelectron spectroscopy (XPS and UPS). The photoelectron spectroscopic data show that the Li over-deposited V₂O₅ system itself is not stable. Further chemical decomposition reactions are taken place even under UHV conditions and lead to form Li₂O and Li₂O₂ compounds on the surface. The formation of Li₂O₂ causes to arise an emission line at about 11.3 eV in the valence band spectra.     

A comparative XPS and UPS study of VOx layers on mineral TiO2(001)‐anatase supports

Four vanadium oxide layers on mineral TiO₂(001)‐anatase supports with different thickness (3–33 Å) were prepared with reactive d.c. magnetron sputtering and were extensively studied with photoelectron spectroscopy. Al Kα radiation and 150 eV synchrotron radiation were used as excitation sources. The evolution of the 2p, 3s and 3p core level line shapes of V and Ti as a function of the vanadium oxide thickness was studied, as well as the O1s and O2s core lines and the valence band. All the V2p spectra of the deposited vanadium oxide layers consist of at least 60% V⁵⁺, the rest being V⁴⁺. The V3p region is complicated by multiplet splitting, which prevents the determination of the vanadium oxidation state. The V3p multiplet splitting is different for the two excitation energies. No reduction of the titania support surface due to the vanadium oxide deposition was observed. Copyright © 2006 John Wiley & Sons, Ltd.     

Cl/Ag体系研究 Ⅱ.Cl吸附引起的表面结构变化

运用LEED,UPS和HREELS等表面技术研究了氯吸附至(c)阶段的Ag(111)表面结构.结果表明,表面上有三维的AgCl(111)生成,其生长按修正的Stranski-Krastanov模式进行.伴随着AgCI(111)生长的同时,表面上产生缺陷.这种缺陷只有在氯吸附至(c)阶段时表面上形成三维AgCI的过程中才能产生,它一旦在表面上形成后,表面上氯的存在与否对其不产生影响.本文提出了一个(c)阶段时的Cl/Ag(111)体系的结构模型.     

Study of the electronic and atomic structure of thermally treated SrTiO3(110) surfaces

The electronic structure of heated SrTiO₃(110) surfaces was investigated with metastable impact electron spectroscopy and ultraviolet photoelectron spectroscopy (He(I)). Scanning tunnelling microscopy and atomic force microscopy (AFM) were used to study the topology of the surface. The crystals were heated up to 1000°C under reducing conditions in ultrahigh vacuum or under oxidizing conditions in synthetic air for 1 h, respectively. Under both conditions microfacetting of the surface is observed. The experimental results are compared with ab initio Hartree–Fock calculations, also presented here, carried out for both ideal and reconstructed SrTiO₃(110) surfaces. The results give direct evidence for Ti termination of the faceted TiO₂ rows. Copyright © 2003 John Wiley & Sons, Ltd.     

由NO分子从头计算结果和紫外光电子能谱确定NO的分子结构

对于NO分子轨道的能级次序现有两种不同的说法,不少人根据NO与O_2~+是等电子体,由O_2~+分子的能级次序确定NO分子组态。本文用NO和O_2~(+)从头计算结果以及NO的紫外光电子能谱相结合的方法说明NO的5σ轨道是弱成键轨道,5σ的轨道能稍高于1π轨道能,也就是说NO的能级次序是与N_2分子相同的;NO与O_2~+虽是等电子体,但是能级次序并不相同,因此由O_2~+的能级次序确定NO分子的电子组态是不妥的。     

K/Ru(10ī0)表面上的CO-4a1轨道对称性确定

用同步辐射角分辨偏振紫外光电子谱对Ｋ／Ｒｕ（１０１０）面上吸附分子轨道的对称性测量发现：结合能在１１、．２ｅＶ的ＣＯ－４ａ１（４σ）分子轨道对ｓ偏振光（在沿〈１２１０〉的人射面）是禁戒的。结果表明由于Ｋ的强烈影响,ＣＯ的分子轨道重新排列（ｓＰ＾２杂化）。依据选择定则和分子轨道的对称性６说明,ｓｐ＾２再杂化的ＣＯ分子吸附的桥位取向是〈１２１０〉晶向。     

Identification of defect sites on oxide surfaces by metastable impact electron spectroscopy

In this review, thin films of SiO₂ on Mo(1 1 2) and MgO(1 0 0) on Mo(1 0 0) have been characterized using metastable impact electron and ultraviolet photoelectron spectroscopies (metastable impact electron spectroscopy (MIES) and ultraviolet photoelectron spectroscopy). The electronic and chemical properties of the thin films are identical to those of the corresponding bulk oxides. For different prepared defective SiO₂ surfaces, additional features are observed in the band-gap region. These features arise from vacancies or excess oxygen and are consistent with theoretical predictions of additional occupied states in the band-gap due to point defects. Extended defect sites on SiO₂ and MgO are identified using MIES by a narrowing of the O(2p) features with a reduction in the density of extended defect sites. MIES of adsorbed Xe (MAX) is also used to estimate the density of extended defect sites. Furthermore, it is shown that CO is an appropriate probe molecule for estimating the defect density of MgO surfaces. Upon Ag exposure, the change in the work function of a low defect MgO(1 0 0) versus a high defect surface is markedly different. For a sputter-damaged MgO(1 0 0) surface, an initial decrease of the work function was found, implying that small Ag clusters on this surface are electron deficient. In contrast, for SiO₂ no significant change of the work function upon Ag exposure with increasing defect density was observed. On MgO(1 0 0), the presence of defect sites markedly alter the electronic and chemical properties of supported Ag clusters. Such a strong influence of defect sites was not found for Ag clusters on SiO₂.     

Ultraviolet Photoelectron Spectra of Potassium Dosed Higher Fullerenes

Abstract

Ultraviolet photoelectron spectra of potassium dosed higher fullerenes are measured with a synchrotron radiation light source. Potassium dosing to higher fullerenes brings a new structure between the spectral onset of pristine fullerenes and the Fermi level. As the spectral edge of the new structure does not cross the Fermi level, potassium dosed higher fullerenes are not metallic but semiconductive. When the potassium is excessively dosed to the fullerenes, the lower binding energy structures above 5 eV become faint. In contrast to this phenomenon, four distinct structures appear between 5 and 14 eV.     

Studies of degradation behaviors of poly (3‐hexylthiophene) layers by X‐ray photoelectron spectroscopy

Degradation behaviors of poly(3‐hexylthiophene‐2,5‐diyl) (P3HT) layers on NiO in the presence of H₂O at ambient pressure and dark conditions were studied using X‐ray photoelectron spectroscopy (XPS). Upon H₂O exposure at 120 °C, partial oxidation of P3HT together with molecular water incorporation, but with the maintained local ring‐structure, were deduced by XPS. Valence band spectra of XPS evidenced that the partial oxidation of P3HT local structure could alter π‐conjugation systems of P3HT layers, forming additional electronic states close to its original highest occupied molecular orbital. For comparison, P3HT surface was also exposed to O₂, and no change in the S 2p and C 1s spectra was found by O₂ exposure at 120 °C, implying that H₂O plays a major role at the initial stage of P3HT oxidation. Copyright © 2014 John Wiley & Sons, Ltd.     

Work function and negative electron affinity of ultrathin barium fluoride films

Thin films of barium fluorides with different thicknesses were deposited on GaAs substrate by electron beam evaporation. The aim of the work was to identify the best growth conditions for the production of coatings with a low work function suitable for the anode of hybrid thermionic-photovoltaic (TIPV) devices. The chemical composition and work function φ of the films with different thicknesses were investigated by X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The lowest value of φ = 2.1 eV was obtained for the film with a thickness of ~2 nm. In the valence band spectra of the films at low kinetic energy, near the cutoff, a characteristic peak of negative electron affinity was present. This effect contributed to a further reduction of the film's work function.