分析实验室UPS电源配置与使用维护

对分析实验室仪器配置Uninterruptible Power System（UPS）电源的必要性进行了分析与探讨,介绍了如何合理配置UPS电源的方法,对UPS电源的使用与维护给出了建议。     

Structure and electronic structure of quasicrystal and approximant surfaces: a photoemission study

The structure and electronic structure of different high-symmetry surfaces of either quasicrystalline or approximant Al–Pd–Mn were studied by means of photoemission-based techniques such as X-ray photoelectron diffraction (XPD) and ultraviolet photoelectron spectroscopy. We find that the twofold (2f), 3f and 5f surfaces of icosahedral Al–Pd–Mn exhibit all the symmetry elements of the icosahedral non-crystallographic group. These XPD experiments can be modeled by single-scattering cluster calculations.

The bulk-terminated icosahedral or approximant surfaces are recovered after ion sputtering followed by annealing at T≈500–600 °C. A wealth of ordered surface phases (with different compositions) are found after sputtering and depending on the annealing temperature as, for example, a crystalline bcc multitwinned phase (for T<400 °C) or a stable decagonal quasicrystalline surface (for T>650 °C).

The icosahedral surfaces are characterised by a lowering of the density of states close to the Fermi edge, compatible with the opening of a pseudogap, as expected for a quasicrystal. The crystalline overlayers are characterised by a sharp Fermi edge, while the approximant and decagonal quasicrystalline surfaces also have a lowered density of states.     

Site-specific electron-induced cross-linking of ortho-carborane to form semiconducting boron carbide

Semiconducting boron carbide (B₁₀C₂H_x) films have been formed by bombardment of condensed ortho-carborane (closo-1,2-dicarbadodecaborane) multilayers on polycrystalline copper substrates by 200 eV electrons under ultra-high vacuum conditions. The film formation process was characterized by X-ray and ultraviolet photoelectron spectroscopies. Electron bombardment results in the cross-linking of the icosahedral units. The cross-linking is accompanied by a shift in the B(1s) binding energy indicating site-specific cross-linking between two boron sites on adjacent carborane icosahedra. An additional shift in valence band binding energies attributed to the surface photovoltage effect is indicative of the formation of a p-type semiconductor. This is the first report of B₁₀C₂H_x formation by electron bombardment of condensed films, and the data indicate that this method is a viable route towards formation of ultra-thin films of tailored composition and cross-linkages for emerging nanoelectronics and sensor applications.     

AB_2型储氢材料表面吸氢的光电子谱研究

AB2 型金属间化合物是新型的储氢材料 ,对 Zr V2 和 Zr Mn2 表面吸氢前后进行了紫外光电子谱( UPS)测量 .吸氢前后的差谱中 ,发现 Zr V2 吸氢后 ,结合能在 8e V左右出现较宽的吸附氢诱导的光电子谱峰 ;而 Zr Mn2 吸氢后 ,在 5e V左右有一个明显的峰 .实验结果表明 :氢在 Zr V2 表面的吸附所成M—H键的电子态的结合能比 Zr Mn2 表面上的要大 ,与 Zr V2 吸氢能力较强是一致的     

Chemical bonding of PTCDA on Ag surfaces and the formation of interface states

We present a detailed investigation of the interface bonding of 3,4,9,10-perylene-tetracarboxylic acid dianhydride (PTCDA) on Ag(1 1 1) and Ag(1 1 0) surfaces by a combination of structural and electronic techniques (SPA-LEED, STM, TPD, UPS, HR-XPS, and NEXAFS) thus obtaining a consistent picture of the adsorption behaviour of PTCDA/Ag in the monolayer regime. The interaction with silver is strong and leads to the formation of new common hybrid orbitals in the monolayer, which are interface states for PTCDA films on Ag, involving at least LUMO, HOMO, and HOMO-1, and the Ag 5s- and 4d-states. This chemisorption is based on a covalent interaction between metal and molecular states, and can unambiguously be distinguished from mere van-der-Waals bonding.     

Structure and reactivity of GaAs surfaces

First the analytical tools, preparation methods and surface crystallography of clean GaAs surfaces are briefly reviewed. Besides the usual methods of cleaving, ion bombardment and annealing, molecular beam epitaxy is mainly used as a growth method under UHV conditions, and has brought a manifold of differently reconstructed structures on the same crystallographic surface, depending on the exact experimental conditions during growth. Quantitative analysis of the surface composition by AES gives the result that these structures differ only in the amount of As in the topmost layer. From the combination of theoretical LEED analysis, UPS results and arguments considering the different physicochemical nature of Ga and As atoms, rehybridisation of the surface atomic bonds emerges as the driving force for reconstruction: the surface Ga atoms try to assume a trivalent planarsp² and the As atoms a trivalentp³ configuration with three mutually perpendicularp-bonds. The better this rehybridised configuration can be achieved, the better is the chemical stability of the respective structure. The sticking coefficient for oxygen, although generally low, thus varies between ～10^-4 and <10^-9, depending on the crystallographic surface and, on the same surface, on the degree of surface bond saturation given by the respective structure. However, it emerges that, at least on As-depleted polar surfaces, adsorption proceeds via a mechanism of removal of Ga atoms during exposure and adsorption on the defect sites created in this way. The existence of such a complicated mechanism is consistent with the difficulties arising with the preparation of thick stoichiometric oxide layers, the preparation methods and properties of which are reviewed briefly in the last section.     

The Molecular and Pathophysiological Functions of Members of the LNX/PDZRN E3 Ubiquitin Ligase Family

The ligand of Numb protein-X (LNX) family, also known as the PDZRN family, is composed of four discrete RING-type E3 ubiquitin ligases (LNX1, LNX2, LNX3, and LNX4), and LNX5 which may not act as an E3 ubiquitin ligase owing to the lack of the RING domain. As the name implies, LNX1 and LNX2 were initially studied for exerting E3 ubiquitin ligase activity on their substrate Numb protein, whose stability was negatively regulated by LNX1 and LNX2 via the ubiquitin-proteasome pathway. LNX proteins may have versatile molecular, cellular, and developmental functions, considering the fact that besides these proteins, none of the E3 ubiquitin ligases have multiple PDZ (PSD95, DLGA, ZO-1) domains, which are regarded as important protein-interacting modules. Thus far, various proteins have been isolated as LNX-interacting proteins. Evidence from studies performed over the last two decades have suggested that members of the LNX family play various pathophysiological roles primarily by modulating the function of substrate proteins involved in several different intracellular or intercellular signaling cascades. As the binding partners of RING-type E3s, a large number of substrates of LNX proteins undergo degradation through ubiquitin-proteasome system (UPS) dependent or lysosomal pathways, potentially altering key signaling pathways. In this review, we highlight recent and relevant findings on the molecular and cellular functions of the members of the LNX family and discuss the role of the erroneous regulation of these proteins in disease progression.     

Surface composition of alloys

The practical importance of alloy surfaces in catalysis, corrosion andother aspects of materials performance is widely recognized. What is needed now is sufficient knowledge of the relationship between externally controllable factors — alloy composition, temperature, environment — and surface properties — composition, structure, chemical activity — to control materials performance in these applications. Our purpose here is to review progress in determining and predicting the relationship between one surface property, composition, and certain externally controllable variables: overall composition, temperature, environment and physical form.We find that theoretical treatments of metal alloy surface composition now include essentially all significant physical effects and can predict values for most parameters of interest. Though improvements are still possible, the accuracy of predictions is more often limited by uncertainties or absence of the basic data for the calculations (e.g., thermochemical values) than by the models themselves.Alloy surface composition can now be measured well. The first monolayercomposition of large alloy slabs can be determined quantitatively over a wide temperature range in ultra-high vacuum. Difficulties with specimens of practical interest still challenge experimentalists. Among these are supported catalysts, surfaces under chemisorbed layers and composition of layers below the first. Significant progress is being made and we expect the next few years will see success.     

彩虹色铬膜电沉积研究

本文对电沉积铬形成的彩虹色铬膜进行了XPS、UPS分析,并用电化学方法研究其形成过程,根据彩虹色铬膜的成分分布。该膜可分为表面层、中间层和与基底连接的交界层,对彩虹色铬膜的形成机理和显色原因也进行了探讨。     

Influence of ionic interfacial layers on electronic properties of Alq3/Si(100) interface

The electronic structures of Alq₃/Si(100), Alq₃/LiBr/Si(100), and Alq₃/KCl/Si(100) systems are presented in this report. Their energy level diagrams were prepared and discussed. The formation of the LiBr and KCl interfacial layers between an Alq₃ film and a Si(100) substrate results in a decrease of the energy barrier at the interface. The studies were carried out in situ in ultrahigh vacuum by ultraviolet photoelectron spectroscopy. Alq₃ as well as LiBr and KCl layers were vapour evaporated onto n‐type Si(100) crystal. The electron affinity of clean Si(100) surface was 4.0 eV, and the position of the valence band maximum was 0.7 eV below E_F. The energetic distance between the valence band maximum of Si(100) and the highest occupied molecular orbital level were 1.5, 2.6, and 2.2 eV, for the Alq₃/Si(100), Alq₃/LiBr/Si(100), and Alq₃/KCl/Si(100) systems, respectively.