Al2O3 insulator layers were deposited step by step by the physical vapor deposition (PVD) method onto gallium nitride in the wurtzite form, n‐type and (0001)‐oriented. The substrate surface and the early stages of Al2O3/n‐GaN(0001) interface formation were characterized in situ under ultra‐high vacuum conditions by X‐ray and ultraviolet photoelectron spectroscopy (XPS, UPS). The electron affinity (EA) of the substrate cleaned by annealing was 3.6 eV. Binding energies of the Al 2p (76.0 eV) and the O 1s (532.9 eV) confirmed the creation of the Al2O3 compound in the deposited film for which the EA was 1.6 eV. The Al2O3 film was found to be amorphous with a bandgap of 6.9 eV determined from the O 1s loss feature. As a result, the calculated Al2O3/n‐GaN(0001) valence band offset (VBO) is ?1.3 eV and the corresponding conduction band offset (CBO) 2.2 eV. 相似文献
Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ~10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.
In this paper,we use the a-plane InGaN interlayer to improve the property of a-plane GaN.Based on the a-InGaN interlayer,a template exhibits that a regular,porous structure,which acts as a compliant effect,can be obtained to release the strain caused by the lattice and thermal mismatch between a-GaN and r-sapphire.We find that the thickness of InGaN has a great influence on the growth of a-GaN.The surface morphology and crystalline quality both are first improved and then deteriorated with increasing the thickness of the InGaN interlayer.When the InGaN thickness exceeds a critical point,the a-GaN epilayer peels off in the process of cooling down to room temperature.This is an attractive way of lifting off a-GaN films from the sapphire substrate. 相似文献
Highly sensitive, selective, reliable and inexpensive cholesterol biosensors are highly demanded for the routine monitoring of cholesterol molecules in order to prevent heart failure incidents. In this study, Co3O4 nanostructures are synthesized using polyvinyl pyrrolidone surfactant as growth template by a low temperature aqueous chemical growth method. The morphology of nanostructures was investigated by scanning electron microscopy and X‐ray diffraction techniques. The nanostructures exhibit interconnected nanowires like morphology with interconnected network of nanowires. The nanostructures of Co3O4 are polycrystalline. The cholesterol oxidase was physically adsorbed on the interconnected nanowires of Co3O4 for the chemical sensing of cholesterol molecules. The sensor device detected a wide range of cholesterol from 1×10?7 M to 1×10?3 M concentrations with sensitivity of ?94.031 mV/decade. A detection limit of 0.035×10?7 M cholesterol concentration was observed and a fast response time of 10 s was also noticed. The fabricated device is highly stable, selective, sensitive, reproducible and repeatable. All the collected information about presented cholesterol biosensor indicates its potential application for the monitoring of cholesterol concentrations from human blood serum and real‐life samples. 相似文献
Generation of scratches on surface of m‐plane GaN substrates due to polishing was studied by atomic force microscopy (AFM). For epi‐ready substrates AFM images confirm a flat surface with the atomic step roughness while a lot of scratches are visible in AFM images for partially polished GaN substrates. The Fourier analysis of AFM images show that scratches propagate easier along {c‐plane} and {a‐plane} directions on m‐plane GaN surface. This observation is an evidence of anisotropy of mechanical properties of GaN crystals in the micro‐scale. This anisotropy is directly correlated with the symmetry and atomic arrangement of m‐plane GaN. 相似文献