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Spontaneous Ga incorporation in ZnO nanowires epitaxially grown on GaN substrate |
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| Authors: | Jianyu Wang Huabin Sun Yun Sheng Fan Gao Yao Yin Yun Li Lijia Pan Youdou Zheng Yi Shi Takashi Sekiguchi |
| Affiliation: | 1. Key Laboratory of Advanced Photonic and Electronic Materials and School of Electronic Science and Engineering, Nanjing University, Nanjing, P.R. China;2. Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, P.R. China;3. National Institute for Materials Science, Tsukuba, Ibaraki, Japan |
| Abstract: | Surface‐diffusion‐induced spontaneous Ga incorporation process is demonstrated in ZnO nanowires grown on GaN substrate. Crucially, contrasting distributions of Ga atoms in axial and radial directions are experimentally observed. Ga atoms uniformly distribute along the ～10 μm long ZnO nanowire and show a rapidly gradient distribution in the radial direction, which is attributed substantially to the difference between surface and volume diffusion. The understanding on the incorporation process can potentially modulate doping and properties in semiconductor nanomaterials.  |
| Keywords: | ZnO nanowires epitaxial growth Ga atoms incorporation surface diffusion GaN substrates |
