电流动聚焦中非牛顿流体射流影响因素的实验研究

在一套流动聚焦装置上加载高压直流电场形成电流动聚焦,并开展了非牛顿流体带电射流的不稳定性特性实验研究。实验在自行设计的装置系统上完成,获得了电流动聚焦中非牛顿流体射流的流动状态,考察了不同控制参数下射流形态的变化。结果表明,由于非牛顿流体具有粘弹性,与牛顿流体相比,非牛顿流体带电射流体现了更复杂的流动特点。这些实验结果为我们理解复杂条件下非牛顿流体射流的流动机理提供了参考,也有助于深入的实验分析和理论研究奠定了基础。     

覆钴型氢氧化镍的电化学性能研究

采用化学共沉积方法,在球形Ni(OH)2表面包覆不同含量的Co(OH)2.用扫描电子显微镜(SEM)和恒电流充放电技术测试其表面微观形貌和充放电性能.研究结果表明:倍率放电性能与包覆Co(OH)2的量有一定的关系,在高倍率放电条件下,包覆层含Co(OH)2量最佳范围为2; ～ 3.6;,镶嵌Co(OH)2包覆层的球形Ni(OH)2具有良好的放电容量和大电流充放电性能.     

Persistent current in a magnetized Rashba ring

We theoretically study the persistent currents flowing in a Rashba quantum ring subjected to the Rashba spin-orbit interaction. By introducing uniform or nonuniform magnetization into the ring, we find that a nonzero persistent charge current circulates in the ring, which stems from the original equilibrium spin current due to the Rashba spin-orbit interaction. Because of broken time reversal symmetry, the two oppositely flowing spin-up and spin-down charge currents of the equilibrium spin current are no longer equal, and so a net persistent charge current can flow in the system. It is also found that the persistent current can be modulated by the Fermi energy, the Rashba spin-orbit interaction strength and the magnetization in the ring. Moreover, the magnetization perpendicular to the ring plane can optimize the current. The persistent current flowing in the ring is a manifestation of the nonzero equilibrium spin current existing in the ring.     

Investigation of lower hybrid current drive during H-mode in EAST tokamak

H-mode discharges with lower hybrid current drive (LHCD) alone are achieved in EAST divertor plasma over a wide parameter range. These H-mode discharges are characterized by a sudden drop in D_α emission and a spontaneous rise in main plasma density. Good lower hybrid (LH) coupling during H-mode is obtained by putting the plasma close to the antenna and by injecting D₂ gas from a pipe near the grill mouse. The analysis of lower hybrid current drive properties shows that the LH deposition profile shifts off axis during H-mode, and current drive (CD) efficiency decreases due to the increase in density. Modeling results of H-mode discharges with a general ray tracing code GENRAY are reported.     

Research on the electrical characteristics of an organic thin-film field-effect transistor based on alternating-current resistance

In this article, an organic thin-film field-effect transistor (OTFFET) with top-gate and bottom-contact geometry based on pentacene as the active layer is fabricated. The experimental data of the I-V are obtained from the OTFFET device. The alternating-current (AC) resistance value of the OTFFET device is calculated using the derivation method from the experimental data, and the AC resistance trend curves of the OTFFET device are obtained with the region fitting method. We analyse the characteristics of the OTFFET device with an AC resistance trend curve. To discover whether it has a high resistance, it is proposed to judge the region of the source/drain voltage (V_DS) less than the transition voltage, thereby determining whether the contact between the metal electrode and the organic semiconductor layer of the OTFFET device is Ohmic or non-Ohmic. The theoretical analysis shows that the field-effect mobility and the AC resistance are in reverse proportion. Therefore, we point out that reducing AC resistance is necessary if field-effect mobility is to be improved.     

An improvement to computational efficiency of the drain current model for double-gate MOSFET

As a connection between the process and the circuit design, the device model is greatly desired for emerging devices, such as the double-gate MOSFET. Time efficiency is one of the most important requirements for device modeling. In this paper, an improvement to the computational efficiency of the drain current model for double-gate MOSFETs is extended, and different calculation methods are compared and discussed. The results show that the calculation speed of the improved model is substantially enhanced. A two-dimensional device simulation is performed to verify the improved model. Furthermore, the model is implemented into the HSPICE circuit simulator in Verilog-A for practical application.     

“交流电有效值”概念教学

人教版高中物理教材<选修3-2>模块中"描述交变电流的物理量"一节介绍了交变电流的峰值、瞬时值、平均值和有效值,还给出了周期和频率的概念.一直以来该节课的教学是平淡无奇.实际上,教师在后续教学中发现,学生经常会将平均值和有效值混淆,在求交变电流的电荷和发热量时经常出错,究其原因,还是学生在有效值的学习中留下了疑点,没有将这个教学难点有效地突破.     

Compression Enhanced Shear Yield Stress of Electrorheological Fluid

Shear tests of an electrorheological fluid with pre-applied electric field and compression along the fleld direction are carried out. The results show that pre-compressions can increase the shear yield stress up to ten times. Under the same external electric field strength, a higher compressive strain corresponds to a larger shear yield stress enhancement but with slight current density decrease, which shows that the particle interaction potentials are not increased by compressions but the compression-induced chain aggregation dominates the shear yield stress improvement. This pre-compression technique might be useful for developing high performance flexible ER or magnetorheological couplings.     

Comment on ＂Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires＂

In ＂Electrical Conductivity and Current-Voltage Characteristics of Individual Conducting Polymer PEDOT Nanowires＂, Long et al. reported the currentvoltage （Ⅰ - Ⅴ） characteristics of individual poly（3,4- ethylenedioxythiophene） （PEDOT） nanowires in the temperature range from 20 to 50K （Fig. 2（a））. The authors stated that at temperatures equal to 50 K and higher, the Ⅰ - Ⅴ curves were linear. With decreasing temperature the Ⅰ - Ⅴ curves gradually became nonlinear. The temperature behavior of Ⅰ - Ⅴ characteristics is not suitably explained.