二维磁结构的扫描隧道显微术研究

文章介绍了近年来利用扫描隧道显微术（STM）对表面和薄膜磁结构的研究进展。二维或表面磁结构可以通过在非磁性单晶上外延磁性单原子层薄膜形成，也可以在清洁的磁性单晶表面形成。利用磁性的STM针尖可以观测到原子分辨的表面磁结构。这将增进人们从纳米尺度对磁性的理解，并推动磁电子学的发展。     

A Novel Contactless Method for Characterization of Semiconductors：Surface Electron Bean Induced Voltage in Scanning Electron Microscopy

We present a novel contactless and nondestructive method called the surface electron beam induced voltage (SEBIV) method for characterizing semiconductor materials and devices.The SEBIV method is based on the detection of the surface potential induced by electron beams of scanning electron microscopy (SEM).The core part of the SEBIV detection set-up is a circular metal detector placed above the sample surface.The capacitance between the circular detector and whole surface of the sample is estimated to be about 0.64pf.It is large enough for the detection of the induced surface potential.The irradiation mode of electron beam (e-beam) influences the signal generation When the e-beam irradiates on the surface of semiconductors continuously,a differential signal is obtained.The real distribution of surface potentials can be obtained when a pulsed e-beam with a fixed frequency is used for irradiation and a lock-in amplifier is employed for detection.The polarity of induced potential depends on the structure of potential barriers and surface states of samples.The contrast of SEBIV images in SEM changes with irradiation time and e-beam intensity.     

生长温度对磁控溅射ZnO薄膜的结晶特性和光学性能的影响

采用反应射频磁控溅射方法，在Si (100) 基片上制备了具有高c轴择优取向的ZnO薄膜.利用 原子力显微镜、透射电子显微镜、X射线衍射分析、拉曼光谱等表征技术，研究了沉积温度 对ZnO薄膜的表面形貌、晶粒尺度、应力状态等结晶性能的影响；通过沉积温度对透射光谱 和光致荧光光谱的影响，探讨了ZnO薄膜的结晶特性与光学性能之间的关系.研究结果显示， 在室温至500℃的范围内，ZnO薄膜的晶粒尺寸随沉积温度的增加而增加，在沉积温度为500 ℃时达到最大；当沉积温度为750℃时，ZnO薄膜的晶粒尺度有所减小；在室温至750℃的范 围内，薄膜中ZnO晶粒与Si基体之间均存在着相对固定的外延关系；在沉积温度低于500℃时 ，制备的ZnO薄膜处于压应变状态，而750℃时沉积的薄膜表现为张应变状态.沉积温度的不 同导致ZnO薄膜的折射率、消光系数、光学禁带宽度以及光致荧光特性的变化，沉积温度对 紫外光致荧光特性起着决定性的作用.此外，探讨了影响薄膜近紫外光致荧光发射的可能因 素. 关键词： ZnO薄膜 表面形貌 微观结构 光学常数     

Fabrication of Intrinsic Josephson Junctions on BI2Sr2CaCu2O8＋δ Single Crystals with Reproducible Surface Junctions

Intrinsic Josephson junctions on Bi2Sr2CaCu2O8 δ single crystals are successfully fabricated using photolithography and Ar jon milling .Here we discuss the properties of the surface CuO2/metal bilayers and surface junctions prepared with different crystal cleavage conditions and metal film deposition techniques.We show that,by cleaving the crystal at liquid nitrogen temperature in vacuum,the contents of the (interstitial) oxygen in the Bi-O layers become stable upon cleavage,leading to a CuO2/metal bilayer and to surface junctions with reproducible properites,These results can be useful for practical device fabrications as well as for the studies of the contact properties between high Tc superconductors and normal metals.     

聚四氟乙烯材料表面激光改性与刻蚀

利用波长为248 nm的准分子激光束在不同激光能量密度下照射聚四氟乙烯(PTFE)材料的表面,并用扫描电镜(SEM)、X射线光电子能谱(XPS)、拉曼(Raman)光谱等手段对激光处理前后样品的表面形貌、化学成分和结构进行测量和分析,进而对激光与聚四氟乙烯相互作用的机理进行了研究。实验结果表明,激光辐照使聚四氟乙烯表面产生去氟效应,导致表面碳化、分子链的交联以及含氧基团的产生,随着激光能量密度的增加,C=C双键逐渐形成。这些结构的变化可以导致表面硬度和粘结性增强。激光能量密度的大小对照射后样品表面的物理性质和化学结构有着重要的影响,它是聚合物表面激光改性和烧蚀的关键因素。     

腺嘌呤及其β-环糊精包结物的光谱研究

通过紫外光谱的摩尔比法确定了腺嘌呤与β-环糊精（β－CD）包结物的包结比为1：1，通过紫外光谱和荧光光谱研究了腺嘌呤在酸性，中性，及碱性条件下的光谱变化及与β－CD包结物的光谱变化，分别求得了它们与β－CD包结的平衡常数。     

COMPLETE EXTREMAL SURFACES OF MIXED TYPE IN 3-DIMENSIONAL MINKOWSKI SPACE

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大电流稳定发射铁电阴极的模拟与实验研究

讨论了铁电阴极的发射机理, 借助MAFIA对不同电极结构的铁电阴极表面电场分布进行了模拟计算. 计算中发现, 发射面电极结构对铁电阴极表面三界点处的场增强效应影响很大,特别是具有孤岛电极结构的铁电阴极具有更大的三界点场强,从而获得更大和更稳定的发射电流. 通过对电极结构及其工艺的改进,使用PLZT铁电阴极在实验中得到了大于100A的电流.