恒定非均匀磁场调控下的强制对流传热数值研究

分别对雷诺数、磁场强度和磁纳米流体浓度进行了讨论，并将数字高程模型(DEM)应用到梯度磁场模型的建立，分析了磁场梯度大小和方向对传热效果的影响。结果表明：雷诺数、磁场强度和梯度与传热效果呈正相关，在磁场介入的情况下，磁纳米流体浓度对传热效果的影响存在一个最佳值；磁场梯度方向垂直于流动方向时对传热的强化效果最显著。以平均努塞尔数和压降为目标参数，利用正交试验设计的方法研究了各变量对传热效果影响的权重大小，得到各变量取值范围内的最佳组合。     

Theoretical Analysis of Interference Nanolithography of Surface Plasmon Polaritons without a Match Layer

Interference nanolithography techniques based on long-range surface plasmon polaritons （LR-SPP） are hardly ever achieved by experiments at present. One key reason is that suitable liquid materials are difflcult to find as the match layer connects the metal film and the resist. We redesign a Kretschmann-Raether structure for interference lithography. A polymer layer is coated under the metal film, and an air layer is placed between the polymer layer and the resist layer. This design not only avoids the above-mentioned question of the match layer, but also can form a soft contact between the polymer layer and the resist layer and can protect the exposure pattern. Simulation results confirm that a device with an appropriately thick polymer layer can form high intensity and contrast interference fringes with a critical dimension of about λ/7 in the resist. In addition, the fabrication of the device is very easy.     

块体金属玻璃的剪切带行为

0 引言 玻璃态物质以纷繁多样的形式广泛存在于自然与科技技术领域[1-3].除了人们熟知的门窗上的硅酸盐无机玻璃、各种塑料制品的高聚物玻璃外,玻璃态还与光纤通讯、生物制品和生化药剂的保鲜存储、极端干燥条件下昆虫活性的保持等这些鲜为人知的方面密切相关.     

纳米粒子在方管中传输与沉降的研究

采用有限体积法离散并应用Simple方法对方截面弯曲管道内的纳米粒子传输和沉降进行了数值计算,结果表明Reynolds数和Schmidt数是影响纳米粒子传输和沉降的重要参数。粒子较小时,弯管中轴向速度较大的区域就是粒子的高浓度区域,沉降增强因子最大值出现在外弯侧的中心位置;粒子较大时,截面浓度的梯度值降低,沉降增强因子趋于平均,此时整个截面的粒子平均沉降。弯曲作用对于粒子较大且Dean数也较大时的影响更加明显。     

高等学校化学学报第31卷(1～12期)学科分类目次

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Electron field emission characteristics of nano-catkin carbon films deposited by electron cyclotron resonance microwave plasma chemical vapour deposition

This paper reported that the nano-catkin carbon films were prepared on Si substrates by means of electron cyclotron resonance microwave plasma chemical vapour deposition in a hydrogen and methane mixture. The surface morphology and the structure of the fabricated films were characterized by using scanning electron microscopes and Raman spectroscopy, respectively. The stable field emission properties with a low threshold field of 5V/μm corresponding to a current density of about 1μA/cm^2 and a current density of 3.2mA/cm^2 at an electric field of 10V/μm were obtained from the carbon film deposited at CH4 concentration of 8%. The mechanism that the threshold field decreased with the increase of the CH4 concentration and the high emission current appeared at the high CH4 concentration was explained by using the Fowler-Nordheim theory.     

Linear and nonlinear optical properties of ZnO nanorod arrays

Polarization-dependent linear absorption, second-harmonic generation （SHG） and 3rd-order nonlinearities of wellaligned ZnO nanorod arrays have been investigated with ps pulses. The depressed spectral width and the enhanced intensity of reflective SHG along the long axis of ZnO nanorods were observed by using p-polarized pulses, which is explained by the optical confinements. The nonlinear absorption coefficient measured with s-polarization reached the maximum 4.0×10^4cm/GW at the wavelength -750nm, which revealed a large two-photon resonance absorption attributed to the quantum confined exciton when the polarization is vertical to the long axis of ZnO nanorod.     

Growth of β-Ga2O3 nanorods by ammoniating Ga2O3/V thin films on Si substrate

This paper reports that/3-Ga2O3 nanorods have been synthesized by ammoniating Ga2O3 films on a V middle layer deposited on Si（111） substrates. The synthesized nanorods were confirmed as monoclinic Ga2O3 by x-ray diffraction,Fourier transform infrared spectra. Scanning electron microscopy and transmission electron microscopy reveal that the grown β-Ga2O3 nanorods have a smooth and clean surface with diameters ranging from 100 nm to 200 nm and lengths typically up to 2μm. High resolution TEM and selected-area electron diffraction shows that the nanorods are pure monoclinic Ga2O3 single crystal. The photoluminescence spectrum indicates that the Ga2O3 nanorods have a good emission property. The growth mechanism is discussed briefly.