非等间距序列建模过程中存在的问题及改进

在研究非等间距序列的基础上 ,本文将非等间距累加运用于非等间距序列的建模过程中 ,使原有模型得到改进 .实例表明 ,改进后模型的精度有了很大提高     

Raman properties embeddedof GaSb nanoparticlesin SiO2 films

The Raman shifts of nanocrystalline GaSb excited by an Ar^ ion laser at wavelengths 514.5, 496.5, 488.0, 476.5,and 457.9nm are studied by an SPEX-1403 laser Raman spectrometer respectively, and they are explained by phonon confinement, tensile stress, resonant Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. The calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.     

半导体激光自混频干涉式传感器中的干涉与调制

应用F-P模型，阐述了半导体激光自混频干涉式传感器的干涉与调制过程，同时给出了相应的计算．     

HI—V族化合物半导体的高能重离子辐照缺陷研究·

用正电子湮没寿命谱技术研究了2.4×1O15/cm2、2.2×1016/cm2注量的85MeV19F离子辐照N型GaP和1.6×1016/cm 2注量的85MeV19F离子辐照P型InP所产生的辐照缺陷.结果表明:两种注量辐照在GaP中均产生较高浓度的单空位.其浓度随着辐照注量的增大而增加;辐照也在InP中产生较高浓度的单空位.     

光学傅氏变换离焦近似及对解卷积的应用

本文研究了光学傅氏变换的离焦近似问题,导出了使傅氏变换关系近似成立在光学上所需要满足的离焦条件,并以此为基础,提出用离焦谱平面方法对电子显微照相图象进行解卷积处理,使得光学解卷过程大大简化。实验得到了满意的结果。 关键词：     

广义C-R组的性质及两个边值问题

本文考虑广义C-R组^[1](H)的解f=u iv jw∈C^2的一些性质，提出与之相关的两个边值问题，用积分方程方法和调和函数性质证明了边值问题解的存在唯一性，并写出解的积分表达式．     

激光诱导间质肿瘤热疗的数值模拟和实验研究

本文在考虑生物组织物性动态变化的情况下建立了激光诱导间质肿瘤热疗(LITT)的物理数学模型,采用MonteCarlo方法数值模拟了LITT中激光能量在生物组织内的传输过程,基于Pennes生物传热方程和Arrhenius方程数值求解了组织内的温度分布和热损伤体积的变化,分析了热物性及血液灌注率的动态变化对LITT过程的影响,并与相应的离体实验结果进行了对比。数值模拟结果表明,组织的热物性及血液灌注率的动态变化对于热损伤体积的变化具有重要的影响。因此在激光诱导间质肿瘤热疗的数值模拟中应该考虑热物性及血液灌注率的动态变化以期为临床治疗方案的制定提供更为准确的依据。     

Fe(Ⅲ)-磺基水杨酸-甲基紫-聚乙烯醇体系光度法测定痕量铁

提出了在聚乙烯醇存在下,Fe(Ⅲ)-磺基水杨酸-甲基紫三元配合物光度法测定Fe(Ⅲ)的方法.该法灵敏度高(ε=3.44×105L@mol-1@cm-1),选择性及精密度均好,用于水中痕量铁的测定,结果满意.     

Theoretical Analysis of Characteristics of GaxInl—x NyAsl—y／GaAs Quantum Well Lasers with Different Intermediate Layers

Based on the band anticrossing model, the effects of the strain-compensated layer and the strain-mediated layero n the band structure, gain and differential gain of GalnNAs/GaAs quantum well lasers have been investigated. The results show that the GaNAs barrier has a disadvantage in increasing the density of states in the conduction band. Meanwhile, the multilayer quantum wells need higher transparency carrier density than the GalnNAs/GaAs single quantum well with the same wavelength. However, they help to suppress the degradation of the differential gain. The calculation also shows that from the viewpoint of band structure, the strain-compensated structure and the strain-mediated structure have similar features.