SiC中游离硅的分析方法

目前测定SiC中的游离硅通常采用氟硅酸钾滴定法或硅钼蓝比色法,分析过程较为麻烦。元素硅与氢氧化钠溶液在加热时反应释放氢气,即 Si+2NaOH+H_2O=Na_2SiO_3+2H_2↑通过测量释放出的氢气体积,换算成标准温度和大气压力下的体积,就可计算游离硅的质量分数。 1 仪器与试剂 测氢装置(自制,见图) YMI动槽式水银气压表(上海气象仪器厂) 氢氢化钠:50％     

无紫外光照射下n型15R-SiC及6H-SiC晶体的电化学腐蚀

本文在无紫外光照射下通过电化学腐蚀法制备了多孔n型15R-及6H-SiC,并用扫描电子显微镜(SEM),拉曼散射及X射线衍射仪(XRD)对多孔层的结构进行了分析。结果表明:晶体的晶型及氧化条件等因素对多孔结构有较大影响。首次观察到多孔n型15-SiC的半圆管状结构,其孔隙率约是66%。     

0.1~3 000 MPa下碳化硅顶砧拉曼光谱作为压力计的研究

 利用Mao-Bell型水热金刚石压腔，以6H型碳化硅晶体作为顶砧，在常温下对碳化硅顶砧的不同点位进行拉曼光谱的原位测量，探讨了在一定条件下利用碳化硅顶砧的969拉曼峰位移作为压力标定的可行性、所具有的优点及需要改进的方面，并且得到了室温下的压力测量公式。     

碳化硅合成反应动力学研究

基于经典轨迹法研究了碳化硅合成反应C(3Pg) SiO(X1∑ ,V=0,1;J=0)→SiC(X1∑ ) O(3Pg)的动力学.该反应存在阈能,反应截面均存在一个极大值和最佳反应能量.当SiO(X1∑ )分别处于V=0、J=0和V=1、J=0状态时,反应阈能分别约为1.2552×103kJ.mol-1和1.1297×103kJ.mol-1,反应截面极大值分别为5.3742×10-3nm2和5.1824×10-3nm2,而最佳初始碰撞能Et(the Optimal InitialCollision Translation Energy)分别为3.3472×103kJ.mol-1和3.7656×103kJ.mol-1.在SiC的最佳产率区(即最佳反应能区),通过反应物的振动激发并不能使SiC产率明显提高,因此基态下SiC合成反应的最佳能区即为该反应的最佳产率区.     

SiC/Pt/CdS纳米棒Z型异质结的制备及其高效光催化产氢性能

In this study, a novel silicon carbide/platinum/cadmium sulfide (SiC/Pt/CdS) Z-scheme heterojunction nanorod is constructed using a simple chemical reduction-assisted hydrothermal method, in which Pt nanoparticles are anchored at the interface of SiC nanorods and CdS nanoparticles to induce an electron-hole pair transfer along the Z-scheme transport path. Multiple characterization techniques are used to analyze the structure, morphology, and properties of these materials. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) results show that the SiC/Pt/CdS materials with good crystal structure are successfully synthesized. Transmission electron microscopy reveals that Pt nanoparticles grow between the interfaces of SiC nanorods and CdS nanoparticles. UV-Vis diffuse reflectance spectroscopy shows that the as-prepared Z-scheme heterojunction samples have a wider light absorption range in comparison with pristine CdS materials. Photoluminescence spectroscopy and the transient photocurrent response further demonstrate that the SiC/Pt/CdS nanorod sample with an optimal molar ratio possesses the highest electron-hole pair separation efficiency. The loading amount of CdS on the surface of SiC/Pt nanorods is effectively adjusted by controlling the molar ratio of SiC and CdS to achieve the optimal performance of the SiC/Pt/CdS nanorod photocatalysts. The optimal H₂ evolution capacity is achieved at SiC : CdS = 5 : 1 (molar ratio) and the maximum H₂ evolution rate reaches a high value of 122.3 µmol·h⁻¹. In addition, scanning electron microscopy, XRD, and XPS analyses show that the morphology and crystal structure of the SiC/Pt/CdS photocatalyst remain unchanged after three cycles of activity testing, indicating that the SiC/Pt/CdS nanocomposite has a stable structure for H₂ evolution under visible light. To prove the Z-scheme transfer mechanism of electron-hole pairs, selective photo-deposition technology is used to simultaneously carry out the photo-reduction deposition of Au nanoparticles and photo-oxidation deposition of Mn₃O₄ nanoparticles in the photoreaction. The experimental results indicate that during photocatalysis, the electrons in the conduction band of CdS participate mainly in the reduction reaction, and the holes in the valence band of SiC are more likely to undergo the oxidation reaction. The electrons in the conduction band of SiC combine with the holes in the valence band of CdS to form a Z-scheme transport path. Therefore, a possible Z-scheme charge migration path in SiC/Pt/CdS nanorods during photocatalytic H₂ production is proposed to explain the enhancement in the activity. This study provides a new strategy for synthesizing a Z-scheme photocatalytic system based on SiC nanorods. Based on the characterization results, it is determined that SiC/Pt/CdS nanocomposites are highly efficient, inexpensive, easy to prepare, and are stable structures for H₂ evolution under visible light with outstanding commercial application prospects.     

基于4H-SiC的高能量分辨率α粒子探测器北大核心CSCD

为突破传统半导体核探测器耐高温与抗辐照性能不足的瓶颈,采用4H-SiC宽禁带半导体材料研制了4H-SiC探测器,并研究其构成的探测系统对α粒子的能量分辨率和能量线性度。所研制4H-SiC探测器漏电流低,当外加反向偏压为200V时,其漏电流仅14.92nA/cm2。采用具有5种主要能量α粒子的226 Ra源研究其构成的探测系统对α粒子的能量分辨率,获得4H-SiC探测系统对4.8~7.7 MeV能量范围内α粒子的能量分辨率为0.61%~0.90%,与国际上报道的高分辨4H-SiC探测系统能量分辨率一致。同时,实验结果表明：4H-SiC探测系统对该能量范围内α粒子的能量线性度十分优异,线性相关系数为0.999 99。     

纳米碳化硅/硅橡胶复合物非线性电导特性研究

将纳米碳化硅填加到硅橡胶中,可以获得具有非线性电导特性的纳米碳化硅/硅橡胶复合物. 本文研究了质量分数分别为5 wt%,15 wt%,30 wt%,45 wt%的纳米碳化硅/硅橡胶复合物的非线性电导特性,建立了电导率与场强的函数关系,分析了复合物的非线性电导机理,并测试了复合物的介电谱特性和击穿特性. 为了探讨非线性碳化硅/硅橡胶复合物应用于电缆终端和复合绝缘子以均匀其电场分布的可能性,应用COMSOL Multiphysics软件,对电缆终端和复合绝缘子中的电场分布进行了仿真分析. 仿真结果表明,将纳米碳化硅/硅橡胶复合物应用于电缆终端应力锥的绝缘部分,以及应用于复合绝缘子的端部,可以有效地降低其最大场强. 关键词： 纳米碳化硅/硅橡胶复合物 非线性电导特性 电场仿真     

碳化物衍生碳涂层/氮化硅摩擦副在水润滑下的摩擦学性能

基于SiC陶瓷在水润滑条件下可能出现因摩擦界面无水或过载引起的失效问题,考察了SiC陶瓷、碳化物衍生碳(CDC)涂层在干摩擦和水润滑条件下的摩擦磨损性能.研究结果表明:CDC涂层在干摩擦和水润滑条件下均具有优异的摩擦学性能,可在摩擦界面无水或过载下正常工作;在水润滑条件下,CDC涂层在宽的载荷和滑动速度下具有优异的摩擦学性能.从微结构角度分析比较了CDC涂层与商品石墨的差异,并由此讨论了其摩擦学性能的差异.讨论了加工SiC陶瓷引起的表面织构对CDC涂层在水润滑条件下摩擦学性能的影响机制.     

大口径碳化硅反射镜轻量化结构与镜坯成型

大口径光学反射镜的材料选择与研制一直是空间光学系统的主要核心技术,采用凝胶注模成型(Gel-Casting)技术一次性完成1.45m碳化硅反射镜镜坯成型,再经1 700℃反应烧结得到一块完整的碳化硅镜坯。介绍了大口径轻质碳化硅反射镜镜坯的基本结构,系统阐述了SiC反射镜镜坯的制备工艺。结合金相显微镜、XRD物相分析及力学性能测试对SiC镜坯的组织结构进行分析,测试数据表明:1.45m碳化硅反射镜镜坯的密度≥3.0g/cm3,抗弯强度≥330 MPa,弹性模量≥340GPa,轻量化率74%。碳化硅反射镜镜坯的力学性能均能满足空间光学系统设计的要求。     

Rh/CeO2-SiC催化乙醇部分氧化制氢

设计合成了Rh/CeO2-SiC新型催化剂,X射线衍射和透射电镜等表征结果表明,SiC表面均匀分散了4nm左右的CeO2纳米颗粒,进而可很好地分散Rh纳米粒子.该催化剂在乙醇部分氧化制氢反应中显示出优越的催化性能,乙醇转化率及H2选择性随反应温度的提高而提高,700oC时乙醇转化率为100%,H2选择性为50%,CO选择性仅为13%,且反应40h未见明显失活,反应后催化剂表面没有明显的积炭生成.该催化剂上较低的CO选择性及抗积炭性能可归因于SiC的热传导性能以及CeO2中活泼晶格氧的作用.