Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode

A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.     

Material growth and device fabrication of terahertz quantum-cascade laser based on bound-to-continuum structure

The terahertz quantum-cascade laser （THz QCL） based on bound-to-continuum structure is demonstrated. The X-ray diffraction measurement of the material shows a high crystalline quality of the active region. A THz QCL device was fabricated with semi-insulating surface-plasmon waveguide. The test device is lasing at about 3 THz and operating up to 60 K. It shows a single frequency property under different drive currents and temperatures. At 9 K, the maximum output power is greater than 2 mW with a threshold current density of 159 A/cm2.     

Fatigue damage behavior of a surface-mount electronic package under different cyclic applied loads

This paper studies and compares the effects of pull-pull and 3-point bending cyclic loadings on the mechanical fa- tigue damage behaviors of a solder joint in a surface-mount electronic package. The comparisons are based on experimental investigations using scanning electron microscopy （SEM） in-situ technology and nonlinear finite element modeling, respec- tively. The compared results indicate that there are different threshold levels of plastic strain for the initial damage of solder joints under two cyclic applied loads; meanwhile, fatigue crack initiation occurs at different locations, and the accumulation of equivalent plastic strain determines the trend and direction of fatigue crack propagation. In addition, simulation results of the fatigue damage process of solder joints considering a constitutive model of damage initiation criteria for ductile materials and damage evolution based on accumulating inelastic hysteresis energy are identical to the experimental results. The actual fatigue life of the solder joint is almost the same and demonstrates that the FE modeling used in this study can provide an accurate prediction of solder joint fatigue failure.     

无重叠图像期间的卫星平台颤振估计算法

提出了基于双重约束函数的无重叠图像期间的颤振估计算法。建立了视差图像与低频颤振相结合的双重约束函数,以评价无重叠图像期间颤振曲线的平滑度;采用共轭梯度法筛选颤振曲线平滑度最优解,并以此作为无重叠图像期间颤振的最佳估计;建立了无重叠图像期间与重叠图像期间颤振之间的函数关系式。以我国XX-1号可见光详查相机为例进行实验,颤振探测结果在被测颤振的频率既不等于也不接近特征频率的整数倍处具备有效性,证明了所提算法能够对无重叠图像期间非特征频率整数倍及其附近处的颤振进行有效探测。     

福建物构所高效暖白光LED用红光荧光粉研究获进展

<正>白光LED由于其节能、环保以及长寿命等特点成为下一代照明器件。目前,商品化的白光LED主要采用蓝光芯片激发YAG∶Ce3+黄光荧光粉,芯片发出的蓝光与荧光粉发射的黄光混合形成白光。但是,YAG∶Ce3+荧光粉的发射光谱中红光组份不足,采用单一YAG∶Ce3+荧光粉较难获得低色温(Correlated Color Temperature,CCT4500 K)、高显色指数(Color Rendering Index,CRI80)的暖白光器件,导致了其在室内通用照明中应用的局限性。为解决这一问题,需在器件中添加适当的红光荧光粉,以补充红光组份,从而制备     

Li原子掺杂C28单分子器件的热自旋输运性质

利用第一性原理对Li原子掺杂C₂₈的分子器件的热自旋输运性质进行了计算。在不同的温度场下,上下自旋分别为Li原子掺杂C₂₈的分子器件中的空穴和电子提供了输运通道,在MJ₁和MJ₃分子器件中,热自旋电流随着温度增加而增大,但在MJ₂分子器件中,热自旋电流先增大再减小。三种分子器件都出现了自旋塞贝克效应,MJ₂还出现了负微分电阻现象,利用费米-狄拉克分布和自旋输运谱对其物理机理进行了解释。根据Li掺杂C₂₈的单分子器件的热自旋输运性质,可设计新的自旋纳米器件。     

硅基拉曼激光器浅谈

硅是理想的电子材料，它不仅在地壳中含量丰富成本低廉而且应用成熟的CMOS技术能够实现硅器件的高集成化和高成品率．在信息时代为了实现超高容量的信息储存、信息传递和超高速度的信息处理，都要求用光子取代电子来作为信息的载体．为了实现这一目的就需要将光通信器件和微处理器件集成在同一硅基上．     

二维半导体材料与器件——从传统二维光电材料到石墨炔

近年来,二维半导体材料由于其独特的材料结构和电子输运特性得到了科学界的广泛关注,被应用于光电器件、催化和生物传感器等领域。本文系统概述了传统二维材料以及新兴二维材料石墨炔的发现和发展历程。重点聚焦在二维材料在光探测器领域中的应用,探讨了不同二维材料体系及器件结构对光探测器性能的影响;并详细介绍了新兴二维材料——石墨炔,及其合成和应用。展望了传统二维材料及石墨炔在光电转换器件的应用中所面临的机遇和挑战。     

49信道绝热低偏振相关全聚合物阵列波导光栅EI北大核心CSCD

研制了一种新型全聚合物49信道绝热低偏振相关阵列波导光栅(AWG)芯片。利用直接紫外光写入技术,实现了波导芯片的设计与制备。利用Matlab软件对AWG的传输特性进行了优化模拟,通过对聚合物衬底的热膨胀系数和聚合物波导的热光系数进行调控,得到了器件良好的绝热低偏振相关特性。测得AWG的中心波长为1550.918 nm,波长间隔为0.8 nm,插入损耗的信道变化范围是5.51 d B^10.62 d B,串扰大于20 d B,偏振漂移和温度变化分别是0.08 nm和0.03 nm/K。这种新技术十分适用于高性能多功能集成光路中,具有广阔的应用前景。     

聚合物光伏材料与器件研究进展

高效率的聚合物太阳电池依赖于光吸收活性层材料对太阳光能量的充分利用．电极界面材料将光吸收活性层产生的空穴和电子分别快速高效地抽取到阳极和阴极,并通过进一步改进光伏器件的结构提升能量转换效率和稳定性．本课题组在光吸收活性层中新型聚合物给体材料、新型电极界面材料、利用水／醇性电极界面材料制作新型倒装器件结构的太阳电池方面取得重要进展,推动了太阳电池在能量转换效率和稳定性方面的突破．