| Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode |
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| 作者姓名： | 廖英杰 娄艳辉 王照奎 廖良生 |
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| 作者单位： | Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM),Soochow University;College of Electronic Engineering, Jiujiang University |
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| 基金项目： | Project supported by the National Natural Science Foundation of China （Grant Nos. 61307036 and 61307037）, the Priority Academic Program Development of Jiangsu Higher Education Institutions （PAPD）, China, and the University Science Research Project of Jiangsu Province, China （Grant No. 12KJB510028）. |
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| 摘 要： | A controllable etching process for indium zinc oxide （IZO） films was developed by using a weak etchant of oxalic acid with a slow etching ratio. With controllable etching time and temperature, a patterned IZO electrode with smoothed surface morphology and slope edge was achieved. For the practical application in organic light emitting devices （OLEDs）, a sup- pression of the leak current in the current-voltage characteristics of OLEDs was observed. It resulted in a 1.6 times longer half lifetime in the IZO-based OLEDs compared to that using an indium tin oxide （ITO） anode etched by a conventional strong etchant of aqua regia.
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| 关 键 词： | 有机发光器件 氧化铟锡 锌阳极 蚀刻率 有机发光二极管 可靠性 设备 发射 |
Improved device reliability in organic light emitting devices by controlling the etching of indium zinc oxide anode |
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| Affiliation: | [1]Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, Suzhou 215123, China; [2]College of Electronic Engineering, ]iujiang University, ]iujiang 332005, China |
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| Abstract: | indium zinc oxide （IZO）, organic light emitting device （OLED）, leak current, lifetime |
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| Keywords: | indium zinc oxide （IZO） organic light emitting device （OLED） leak current lifetime |
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