WO3掺杂的La2/3Sr1/3MnO3电输运与磁电阻特性

通过溶胶-凝胶法制备了La2／3Sr1／3MnO3＋xWO3（x=0～25％）系列多晶陶瓷样品．结果表明。随着WO3掺杂量的增加，样品的电阻率增大，金属-绝缘体相变温度（Tp）值下降．在1．4T磁场下，当0≤x≤12．5％时，样品的室温磁电阻值从5％增大到15％，提高了200％．当12．5％〈x≤25％时，室温磁电阻值从15％降低到0．这对磁电阻材料在室温下的应用提供实验依据．     

函数的双参数平均的几个性质

对于函数 f(x) q的双参数平均 Mp,q(f;a,b) ,证明当 f(x)为单调函数时它是 a,b的单调函数 ;当f (x)不是常量时它是 p,的严格增函数     

对合的分解

Using the notion of biconnected sum we define the biconnected sum (T₁, M₁)§(T₂,M₂) of two involutions (T1M1) and (T2,M2) which is an involution on the biconnected sum M₁,§M₂. A connected involution is said to be reducible if it can be expressed as a biconnected sum of two connected involutions.Theorem Each connected involution (T, M) can be decomposed into a bi-connected sum of connected irreducible involutions (T, M)=(T₁, M₁)§…§(T_q,M_q),and (?) where the coefficients of H_{n_1}(M) are in Z/2 Z if M is unoriented, in Z if is oriented .     

线性流形上矩阵方程BTXB=F的双对称最小二乘解

1引言令R~(n×m)、OR~(n×n)、SR~(n×n)(SR_0~(n×n))分别表示所有n×m阶实矩阵、n阶实正交阵、n阶实对称矩阵(实对称半正定阵)的全体,A~ 表示A的Moore-Penrose广义逆,I_k表示k阶单位矩阵,S_k表示k阶反序单位矩阵。R(A)表示A的列空间,N(A)表示A的零空间,rank(A)表示矩阵A的秩。对A=(a_(ij)),B=(b_(ij))∈R~(n×m),A*B表示A与     

Hopf代数上的扭曲模和(斜)余配对Hopf模

本文第一部分主要把扭曲的方法运用到模上,从而得到扭曲模．作为特例,我们构造了H  M的Smaush模和量子模．当K是有限维Hopf代数,证明K*  M是一个右D(K)-Hopf模,因此得到了一个基本同构定理．第二部分主要把斜余配对双代数进行推广,得到了斜余配对Hopf模,并且给出判断斜余配对Hopf模的一个充要条件．     

论双变量同构凸函数

在定义加权同构平均值的基础上将凸函数、几何凸函数、平方凸函数等理论统一为双变量同构凸函数理论,给出其统一的微分判别法则,并由此推导出不同类型的同构平均值间不等关系的简单判定法则.     

基于遗传禁忌算法的双资源约束下并行生产线调度研究

并行生产线调度问题兼有并行机器和流程车间调度问题的特点,是一类新型的调度问题。在考虑遗传算法早熟收敛特性和禁忌搜索法自适应优点的基础上,将遗传算法和禁忌搜索法结合起来,提出了基于遗传算法和禁忌搜索算法的双资源并行作业车间的调度优化问题算法,即考虑到了产品的调度受到机器、工人等资源制约的影响,对算法中种群的构造,适应度计算,遗传操作等方面进行了研究,最后给出了实例仿真和结论。     

Magnetic Properties of Hf0.8Ta0.2（Fe0.97A0.03）2 （A=Al, Co, Mn） Systems

Moessbauer studies on the effect of substitution with 3% Al, Co, Mn atoms in the intermetallic compound of Hf0.8Ta0.2Fe2 are reported. The Al substitution leads to increase of the FM-AFM transition temperature and to decrease of the AFM-PM transition temperature. The Co substitution leads to disappearance of the FM state, only showing some FM impurity component, while Mn substituted compound indicates coexistence of FM and AFM states at low temperature. The phenomena imply complex itinerant electron properties in these magnetic systems.     

Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices

We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant- tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage （I - V） curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I - V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.