介孔氧化镍的合成、表征和在电化学电容器中的应用

以十二烷基硫酸钠为模板剂, 采用尿素为沉淀剂, 用均匀沉淀法, 适当控制尿素的水解速度, 制备具有介孔结构的氢氧化镍胶体, 在不同温度下焙烧处理得到孔分布集中的氧化镍介孔分子筛. 结果表明, 在523 K下焙烧得到的氧化镍BET比表面达到477.7 m²•g^－1. 结构表征还显示, 介孔氧化镍的孔壁为多晶结构, 其孔结构形成机理应为准反胶束模板机理. 循环伏安法表明用NiO介孔分子筛制备的电极有很好的电容性能. 与浸渍法和阴极沉淀法制得的NiO相比, 这种介孔结构的NiO能够大量用来制作电化学电容器电极, 并且保持较高的比电容量和良好的电容性能.     

层状和MSU结构的介孔纳米二氧化锆

在不添加任何结构稳定剂的条件下, 首次用固态反应结构导向法成功地合成了具有层状结构和MSU结构的介孔纳米二氧化锆. 研究发现, 通过有效地控制晶化条件, 二氧化锆的晶相、比表面和孔结构可以方便地得以调变. 晶相的转变由粒度大小控制, 并且构成无机骨架的相态不同, 合成样品的热稳定性存在差异. 结果显示, 介孔纳米二氧化锆的形成仍遵循超分子液晶模板机制, 且由碱锆摩尔比的大小控制介观相的转化, 低碱锆摩尔比条件下形成层状相, 而高碱锆摩尔比条件下为维持整个体系的低能稳定状态, 在电荷作用下形成反棒状胶束结构.     

聚氧乙烯-粘土-碱金属离子插层复合物作用机理研究

测量了聚氧乙烯(PEO)-粘土-K^＋/Na^＋插层复合物在不同相对湿度环境中的相对吸水量, 研究了相对吸水量与粘土层间距d₀₀₁之间的关系, 并结合X射线光电子能谱的研究结果, 探讨了复合物中PEO、粘土与碱金属离子三者之间的相互作用. 在K-MMT-PEO复合物中, K^＋与PEO和粘土表面都存在配合作用, 形成稳定的三元配合物, 在不同相对湿度下, K-MMT-PEO配合物吸水能力较低, 层间距基本不变. 在Na-MMT-PEO复合物中, Na^＋与PEO形成配合物, 水分子能破坏Na^＋-PEO之间的配合作用, 使PEO和Na^＋各自形成水化层, 因此随着相对湿度的增加Na-MMT-PEO复合物的相对吸水量和层间距都增大.     

轮古常渣及其组分中金属钒卟啉的分离与鉴定

采用改进的溶剂萃取方法对轮古常渣及其组分中的金属钒卟啉进行分离。结果表明,从轮古常渣中分离出的卟啉钒的质量分数为18.5%,从轮古常渣正庚烷可溶质和沥青质中分离出的卟啉钒的质量分数分别为68.0%和9.2%。用紫外-可见光谱对萃取出来的金属钒卟啉和甲磺酸脱金属后得到的游离卟啉进行表征。结果表明,轮古常渣及其正庚烷可溶质和沥青质中的金属钒卟啉主要是初卟啉。对轮古常渣中的游离卟啉进行基质辅助激光解吸电离飞行时间质谱分析证明,轮古常渣中的金属钒卟啉主要是初卟啉。     

Mei Symmetry and Noether Symmetry of the Relativistic Variable Mass System

The definition and criterion of the Mei symmetry of a relativistic variable mass system are given. The relation between the Mei symmetry and the Noether symmetry of the system is found under infinitesimal transformations of groups. The conserved quantities to which the Mei symmetry and Noether symmetry of the system lead are obtained. An example is given to illustrate the application of the result.     

水平井变质量流研究进展

综述了水平井筒沿管壁具有流体流入的变质量流动的最新研究进展.内容包括:考虑油藏流体流入时井筒流动压力及产量的计算,具有不同流入时管壁摩擦系数的经验计算公式,以及流体径向流入井筒后流动阻力损失产生的机理分析等.重点介绍了水平井筒变质量流动阻力系数的计算,同时文中还介绍了井筒两相变质量流动损失产生的机理和数值模拟研究进展.      

变质量非Четаев型非完整系统在相空间的Lie对称性与守恒量

在相空间引入无限小群变换,研究变质量非Четаев型非完整系统的Lie对称和守恒量.利用系统运动微分方程在无限小群变换下的不变性建立Lie对称的确定方程和限制方程,得到Lie对称的结构方程和守恒量,并举例说明结果的应用.     

Fidelity of Interference Between Two Bose-Einstein Condensates with Collision and Dissipation

Interference between the two Bose-Einstein condensates with collision and dissipation is investigated. It is found that when the two condensates are initially in the coherent state, the interference intensity is affected by the collision and dissipation, but for the initial Fock state, it is only related to the dissipation. Whether the initial state is in the coherent state or in a Fock state, the fidelity time has nothing to do with collision. For the initial coherent state, the fidelity loss rate is zero, but for the initial Fock state, it is determined by the initial particle number of the two condensates and dissipation.     

Study of the Lie symmetries of a relativistic variable mass system

The differential equations of motion of a relativistic variable mass system are given.By using the invariance of the differential equations under the infinitesimal transformations of groups,the determining equations and the restriction equations of the Lie symmetries of a relativistic variable mass system are built,and the structure equation and the conserved quantity of the Lie symmetries are obtained.Then the inverse problem of the Lie symmetries is studied.The corresponding Lie symmetries are found according to a known conserved quantity.An example is given to illustrate the application of the result.     

Investigation of weak damage in Al0.25Ga0.75As/GaAs by using RBS/C and Raman spectroscopy

The weak damage induced by 0.8 MeV Si ion implantation in the Al_0.25Ga_0.75As films epitaxially grown on GaAs substrates was studied by using Rutherford backscattering spectrometry/channeling (RBS/C) and Raman spectroscopy. RBS/C spectra measured from the implanted samples showed rather low damage level induced by the ion implantation with ion dose from 1×10¹⁴ to 5×10¹⁵ cm⁻². The Raman spectra were measured on these samples. Two kinds of phonon modes, GaAs-like and AlAs-like, are observed, which indicate the existence of multiple phonon vibrational modes in the epitaxial Al_0.25Ga_0.75As films on the GaAs substrate. Compared with the unimplanted sample, the Raman photon peaks for the implanted sample shift gradually to lower energy with the increase of the implantation dose. The strains induced in the implanted layer were also evaluated from the Raman spectra. The result from high resolution double crystal X-ray diffractometry (HRXRD) also verified the evolution of the strains in the implanted layers.