下电极对ZnO薄膜电阻开关特性的影响

本文采用直流磁控溅射法在三种不同的下电极(BEs)上制备了ZnO薄膜, 获得了W/ZnO/BEs存储器结构. 研究了不同的下电极材料对器件电阻开关特性的影响. 研究结果表明, 以不同下电极所制备的器件都具有单极性电阻开关特性. 在低阻态时, ZnO薄膜的导电机理为欧姆传导, 而高阻态时薄膜的导电机理为空间电荷限制电流. 不同下电极与ZnO薄膜之间的肖特基势垒高度对电阻开关过程中的操作电压有较大的影响, 并基于导电细丝模型对不同下电极上ZnO薄膜的低阻态阻值及reset电流的变化进行了解释. 关键词： ZnO薄膜 电阻开关 下电极     

l k,s -Singular values and spectral radius of rectangular tensors

The real rectangular tensors arise from the strong ellipticity condition problem in solid mechanics and the entanglement problem in quantum physics. In this paper, we study the singular values/vectors problem of real nonnegative partially symmetric rectangular tensors. We first introduce the concepts of l ^k,s -singular values/vectors of real partially symmetric rectangular tensors. Then, based upon the presented properties of l ^k,s -singular values /vectors, some properties of the related l ^k,s -spectral radius are discussed. Furthermore, we prove two analogs of Perron-Frobenius theorem and weak Perron-Frobenius theorem for real nonnegative partially symmetric rectangular tensors.     

一类微分-差分方程组的内禀对称和等价群变换

研究一类微分-差分方程组的对称和等价群变换.采取内禀的无穷小算子方法,给出了方程组的内禀对称和等价群变换.为结合抽象Lie代数结构,给方程完全分类提供了理论基础.     

Piezoelectric activities and domain patterns of orthorhombic Ba(Zr,Ti)O3 ceramics

Ba(Zr_xTi_1?x)O₃ (0.025 ≤ x ≤ 0.065) ceramics were prepared by conventional solid-state reaction method. Crystalline structures were analyzed by X-ray diffraction. It was shown that all the Ba(Zr_xTi_1?x)O₃ (0.025 ≤ x ≤ 0.065) ceramics were of orthorhombic phase at room temperature. Piezoelectric activities and domain patterns were investigated and compared with those of BaTiO₃ ceramic. All the Ba(Zr_xTi_1?x)O₃ ceramics showed nearly the same d₃₃ values of about 265 pC/N and the same domain width of about 220 nm. By comparing the grain sizes and domain width of the Ba(Zr_xTi_1?x)O₃ ceramics with those of BaTiO₃ ceramic, it is speculated that the variation of domain width with grain sizes in orthorhombic Ba(Zr_xTi_1?x)O₃ ceramics may be different with that in tetragonal BaTiO₃ ceramic. Besides domain width, the effective inertia mass of domain wall is also considered to be a very important factor that impacts the piezoelectric activities of the Ba(Zr_xTi_1?x)O₃ ceramics.     

Magnetic transition and large reversible magnetocaloric effect in EuCu1.75P2 compound

The magnetocaloric effect(MCE) in EuCu1.75P2 compound is studied by the magnetization and heat capacity measurements.Magnetization and modified Arrott plots indicate that the compound undergoes a second-order phase transition at TC ～ 51 K.A large reversible MCE is observed around TC.The values of maximum magnetic entropy change(-△SxMma) reach 5.6 J·kg-1·K-1 and 13.3 J·kg-1·K-1 for the field change of 2 T and 7 T,respectively,with no obvious hysteresis loss in the vicinity of Curie temperature.The corresponding maximum adiabatic temperature changes(△Tadmax) are evaluated to be 2.1 K and 5.0 K.The magnetic transition and the origin of large MCE in EuCu1.75P2 are also discussed.     

Thermal stability and electrical properties of copper nitride with In or Ti

Thin films of ternary compounds CuxInyN and CuxTiyN were grown by magnetron sputtering to improve the thermal stability of Cu3N,a material that decomposes below 300℃,and thus promises many interesting applications in directwriting.The effect of In or Ti incorporation in altering the structure and physical properties of copper nitride was evaluated by characterizing the film structure,surface morphology,and temperature dependence of electrical resistivity.More Ti than In can be accommodated by copper nitride without completely deteriorating the Cu3N lattice.A small amount of In or Ti can improve the crystallinity,and consequently the surface morphology.While the decomposition temperature is rarely influenced by In,the Ti-doped sample,Cu59.31Ti2.64N38.05,shows an X-ray diffraction pattern dominated by characteristic Cu3N peaks,even after annealing at 500℃.Both In and Ti reduce the bandgap of the original Cu3N phase,resulting in a smaller electrical resistivity at room temperature.The samples with more Ti content manifest metal-semiconductor transition when cooled from room temperature down to 50 K.These results can be useful in improving the applicability of copper-nitride-based thin films.     

The fractal dimensions of the level sets of the generalized iterated Brownian motion

Let{W1(t), t∈R+} and {W2(t), t∈R+} be two independent Brownian motions with W1(0) = W2(0) = 0. {H (t) = W1(|W2(t)|), t ∈R+} is called a generalized iterated Brownian motion. In this paper, the Hausdorff dimension and packing dimension of the level sets {t ∈[0, T ], H(t) = x} are established for any 0 < T ≤ 1.     

An investigation of time-dependent domain wall pinning effects in Tb/Fe multilayer thin films

Reverse domain nucleation time measurements have been performed on two Tb/Fe multilayer magneto-optic films exhibiting different degrees of domain wall pinning. A linear relationship between ln (reverse domain nucleation time) and the applied field has been predicted and observed for a sample exhibiting weak domain wall pinning. This is in agreement with theoretical work presented which addresses time dependence in systems possessing weak domain wall pinning. A non-linear relationship applicable over a restricted field range has been derived for a sample exhibiting strong domain wall pinning. Experimental results have indicated that this relationship is also valid.