采用拉曼光谱、液相色谱对比研究羊毛、鸡毛的结构

废弃羊毛、鸡毛角朊含量很高,研究其结构、性能并合理利用、变废为宝是目前的重要课题。采用激光显微拉曼光谱仪、液相色谱仪对比分析了羊毛、鸡毛2种角朊在蛋白质分子链构象、二硫键含量、氨基酸含量等结构方面的不同点,为合理利用这2种角朊提供参考。     

Rashba自旋轨道耦合作用下电荷流散粒噪声与自旋极化的关系研究

根据存在自旋轨道耦合时基于散射理论的电流表达式和散粒噪声表达式,并利用自旋密度矩阵推导出沿自旋量子化坐标的自旋极化率表达式.解析计算了单通道的情况,发现自旋极化率和电荷流散粒噪声无关.由于多通道解析推导的困难,使用非平衡格林函数技巧,数值计算了包含自旋轨道耦合效应的纯净二维电子气的多通道情况.分别改变偏压、自旋轨道耦合系数、导体长度,研究了这三种不同条件下的自旋极化率与电荷流散粒噪声Fano因子的相关性.两者的相关性表明,相关性定量关系的建立可能为自旋极化的全电学检测提供新思路. 关键词： 散粒噪声 自旋极化 Rashba自旋轨道耦合 散射矩阵     

Analytical model including the fringing-induced barrier lowering effect for a dual-material surrounding-gate MOSFET with a high-k gate dielectric

By solving Poisson＇s equation in both semiconductor and gate insulator regions in the cylindrical coordinates, an analytical model for a dual-material surrounding-gate （DMSG） metal-oxide semiconductor field-effect transistor （MOSFET） with a high-k gate dielectric has been developed. Using the derived model, the influences of fringing-induced barrier lowering （FIBL） on surface potential, subthreshold current, DIBL, and subthreshold swing are investigated. It is found that for the same equivalent oxide thickness, the gate insulator with high-k dielectric degrades the short-channel performance of the DMSG MOSFET. The accuracy of the analytical model is verified by the good agreement of its results with that obtained from the ISE three-dimensional numerical device simulator.     

N/P沟道MOSFET1/f噪声的统一模型

对n／p两种沟道类型、不同沟道尺寸MOSFET的1／f噪声特性进行了实验和理论研究.实验结 果表明，虽然nMOSFET的1／f噪声幅值比pMOSFET大一个数量级，但是其噪声幅值均表现出和 有效栅压的平方成反比、和漏压的平方成正比、和沟道面积成反比的规律.基于该实验结果 ，认为MOSFET的1/f噪声产生机理为位于半导体_氧化物界面附近几个纳米范围内的氧化层陷 阱通过俘获和发射过程与沟道交换载流子，在引起载流子数涨落的同时也通过库仑散射导致 沟道载流子迁移率的涨落.在这两种涨落机理的基础上，引入了氧化层陷阱的分布特征及其 与沟道交换载流子的隧穿和热激活两种方式，建立了MOSFET l／f噪声的统一模型.实验结果 和本文模型符合良好. 关键词： 1/f噪声 MOSFET 氧化层陷阱 涨落     

发光二极管可靠性的噪声表征

通过对发光二极管内部结构的研究，发现N_t(界面态陷阱密度)和扩散电流比率 是影响发光二极管性能的重要因素，并与器件可靠性有密切关系.器件内部存在的多种噪声 中，低频1/f噪声可表征N_t和扩散电流比率.在深入研究发光二极管工作原理及1 /f噪声载流子数涨落理论和迁移率涨落理论的基础上，建立了发光二极管的电性能模型及1/ f噪声模型.在输入电流宽范围变化的条件下测量了器件的电学噪声，实验结果与理论模型符 合良好.通过对其测量结果分析，深入研究了噪声和发光二极管性能与可靠性的关系，证明 了噪声幅值越大，电流指数越接近于2，器件可靠性越差，失效率则显著增大. 关键词： 1/f噪声 发光二极管 陷阱 光功率     

Mesoporous silica SBA-15 sheet with perpendicular nanochannels

Free-standing thin sheet form of mesoporous silica materials with perpendicular orientation is a much desired materials for its possible applications in catalysis, mask, and separation. A three component amphiphile system of sodium dodecyl sulfate/hexadecyltrimethylammonium bromide/pluronic-123(C(16)TMAB/SDS/P123) was employed to template the condensation of sodium silicates for the formation of SBA(⊥), a thin sheet of SBA-15 with perpendicular nanochannels. SBA(⊥) can be synthesized at SDS/C(16)TMAB=1.5 and T≥40°C and shows pH-dependent morphology. It has uniform pore size ～9 nm, homogeneous sheet thickness in the range of 60-300 nm and dimension of several microns. We studied in details the structure and morphology of the SBA(⊥) with variation of three experimental parameters: the SDS/C(16)TMAB ratio, the temperature, and the pH condition in the synthetic gel. It is proposed that the mixed surfactants of SDS and C(16)TMAB form catanionic vesicle in which the P123 and silicates are condensed. The balanced interaction of P123/silicate with the narrow confinement under surfactant bi-layers of C(16)TMAB/SDS promoted the formation of perpendicular nanochannels. Low temperature and pH conditions favor stronger segregation of the PPO and PEO-oligosilicate segments in the SBA(⊥) structure which gives the basis of thickness control of the sheet. The control of structure and morphology are discussed with modern theory of microphase separation in block copolymers under confinement.     

A unified drain current 1/f noise model for GaN-based high electron mobility transistors

In this work, we present a theoretical and experimental study on the drain current 1/f noise in the AIGaN/GaN high electron mobility transistor （HEMT）. Based on both mobility fluctuation and carrier number fluctuation in a two- dimensional electron gas （2DEG） channel of AlGaN/GaN HEMT, a unified drain current 1/f noise model containing a piezoelectric polarization effect and hot carrier effect is built. The drain current 1/f noise induced by the piezoelectric polarization effect is distinguished from that induced by the hot carrier effect through experiments and simulations. The simulation results are in good agreement with the experimental results. Experiments show that after hot carrier injection, the drain current 1/f noise increases four orders of magnitude and the electrical parameter degradation Agm/gm reaches 54.9%. The drain current 1/f noise degradation induced by the piezoelectric effect reaches one order of magnitude; the electrical parameter degradation Agm/gm is 11.8%. This indicates that drain current 1/f noise of the GaN-based HEMT device is sensitive to the hot carrier effect and piezoelectric effect. This study provides a useful reliability characterization tool for the A1GaN/GaN HEMTs.     

Mechanistic Investigation of H2O2-dependent Chemiluminescence from Tetrabromo-1,4-Benzoquinone

As a H₂O₂-dependent bioluminescent substrate, tetrabromo-1,4-benzoquinone (TBBQ) was first isolated from acorn worm. The mechanism of chemiluminescence (CL) corresponding to the bioluminescence (BL) of acorn worm is largely unknown, let alone the mechanism of BL. In this article, we firstly studied the chemical and physical processes, and mechanism of H₂O₂-dependent CL from TBBQ by theoretical and experimental methods. The research results indicate: the CL process is initiated by a nucleophilic substitution reaction, which leads to the formation of an anionic dioxetane through five consecutive reactions; the anionic dioxetane decomposes to the first singlet excited state (S₁) via a conical interaction of the potential energy surfaces (PESs) between the ground (S₀) and S₁ state; the anionic S₁-state changes to its neutral form by a proton transfer from the solvent and this neutral product is assigned as the actual luminophore. Moreover, the experimental detection of CL, ^.OH and the identifications of 2,3-dibromo maleic acid and 2-bromo malonic acid as the major final products provide direct evidence of the theoretically suggested mechanism. Finally, this study proves that the activity of the H₂O₂-dependent CL from TBBQ is significantly lower than the one from tetrachloro-1,4-benzoquinone (TCBQ), which is caused by the weaker electron withdrawing effect and the stronger heavy atomic effect of bromine.     

基于辐照前1/f噪声的金属-氧化物-半导体场效应晶体管辐照退化模型

基于金属-氧化物-半导体场效应晶体管(MOSFET)噪声的载流子数涨落和迁移率涨落理论,建立了MOSFET辐照前1/f噪声参量与辐照后分别由氧化层陷阱和界面陷阱诱使阈值电压漂移之间的定量数学模型,并通过实验予以验证.研究结果表明,辐照诱生的氧化层陷阱通过俘获和发射过程与沟道交换载流子,在引起载流子数涨落的同时也通过库仑散射导致沟道迁移率的涨落,因此辐照前的1/f噪声幅值正比于辐照诱生的氧化层陷阱数.利用该模型对MOSFET辐照前1/f噪声与辐照退化的相关性从理论上 关键词： f噪声')" href="#">1/f噪声 辐照 金属-氧化物-半导体场效应晶体管 陷阱     

计算机实验室与应用型创新人才培养探讨

计算机实验室承担大学生在计算机上做实验的基础课、专业课、选修课和学科竞赛等各专业实验教学任务。通过对实验室在高校创新人才培养中存在问题和重要性进行分析,以计算机实验室为例研究了实验室与应用型创新人才培养之间的关系,以培养大学生计算机的综合应用能力和创新能力为目标的开放、互联、共享计算机实验室对应用性创新人才培养发挥了重要作用。