低能量阈高纯锗探测器用于暗物质探测实验研究

一个位于韩国江原道襄阳郡地下实验室的暗物质WIMP探测实验中, 采用了低能量阈高纯锗探测器, 带有碘化铯晶体反符合探测器作为主动屏蔽体. 整个系统设置和能量标定已经完成, 并且已经积累了约155d的本底数据. 还应用外置伽玛源和中子源进行了实验, 以判断本底的来源. 介绍了数据的分析和初步结果, 并给出了实验诱人的前景.     

CsI(Tl)晶体探测器APD读出的温度效应

对中国科学院近代物理研究所自行生长的铊激活碘化铯闪烁晶体CsI(Tl)光输出及Hamamtsu公司生产的S8664-1010型雪崩光二极管(APD)增益对温度的依赖关系做了系统研究. 结果表明, CsI(Tl)晶体光产额在室温范围内随着温度的增加而增加, 在－2℃—8℃温度范围内的平均温度系数为0.67%/℃, 在8℃—25℃温度范围内的平均温度系数为0.33%/℃. 而对所使用的APD, 其增益在室温范围内的温度系数为－3.68%℃(工作电压400V). APD结合CsI(Tl)晶体在室温下对¹³⁷Cs的662keV γ射线的能量分辨可达5.1%.     

GaN MOS-HEMT Using Ultra-Thin A1203 Dielectric Grown by Atomic Layer Deposition

We report a GaN metal-oxide-semiconductor high electron mobility transistor （MOS-HEMT） with atomic layer deposited （ALD） Al2O3 gate dielectric. Based on the previous work [Appl. Phys. Lett. 86 （2005） 063501] of Ye et al. by decreasing the thickness of the gate oxide to 3.5nm and optimizing the device fabrication process, the device with maximum transconductance of 150mS/mm is produced and discussed in comparison with the result of lOOmS/mm of Ye et al. The corresponding drain current density in the 0.8-μm-gate-length MOS-HEMT is 800mA/mm at the gate bias of 3.0 V. The gate leakage is two orders of magnitude lower than that of the conventional A1GaN/GaN HEMT. The excellent characteristics of this novel MOS-HEMT device structure with ALD Al2O3 gate dielectric are presented.     

光子结构函数的直接检验

本文基于喷注电荷截面方法,提出了一种直接测量光子结构函数的可行方案。 关键词：     

Particle Simulation of Relativistic Laser Pulse Density Channeling

Two-dimensional particle simulation is carried out to study the interaction between a high-intensity finite-size spot laser beam and a plasma with linear density profile. The laser is allowed to propagate in underdense corona until it is cut off near the critical surface. The intense laser can drive various instabilities through particle collective motion and result in electron heating,while relativistic effect and ponderomotive force can bring strong energy absorption and electron heating in the overdense region. As the laser beam is nonuniform in the transverse direction,a density channel forms and hole boring effect occurs as a result of strong ponderomotive force pushing particle outwards. These processes can be investigated well by particle simulation.     

MCM-41负载SO42-/ZrO2超强酸的性能研究

采用浸渍－焙烧法制备了ＭＣＭ－４１负载ＳＯ＾２－４／ＺｒＯ２（ＳＺ）超强酸催化剂，并考察了其织构性质及酸性的变化规律。结果发现，过高的ＳＺ负载量会引起ＭＣＭ－４１介孔结构的破坏，而负载量过低则不能产生超强酸性。     

算子权移位的换位代数的交换性

令T是以{Wk}∞k=1B(Cn)为权序列的内射算子权移位.设T是强不可约的,而且sup1k<∞‖W-1k‖< ∞.用A′(T)表示T的换位代数,radA′(T)表示A′(T)的Jacobson根.本文刻划了radA′(T)并且证明了商代数A′(T)/radA′(T)是交换的.     

酸度对CeCl3·nH2O晶体热分解过程的影响研究

采用热重-差式扫描量热法（TG—DSC）分析了不同酸度的盐酸-水合氯化铈饱和溶液中生成的CeCl3·nH2O晶体在空气氛围热分解脱水的过程，热分析表明酸度对CeCl3·nH2O晶体结晶形式有影响，氯化铈饱和溶液在盐酸中生成的CeCl3·nH2O晶体较商品CeCl3·nH2O晶体的热分解多一个恒温脱水失重的过程．X射线粉末衍射（XRD）结果表明此商品CeCl3·nH2O晶体为CeCl3·7H2O，盐酸-水合氯化铈饱和溶液中生成的CeCl3·nH2O晶体为含有不同个数结晶水的混合物．     

Synthesis, Crystal Structure and Luminescent Property of a Novel Pt(II) Complex with Weak Metal-metal Interaction

The title complex cis-bis(tetrahydrothiophene)-bis(nitrate) platinum(II), (tht)2Pt(NO3)2, was the reducing product from potassium hexachloroplatinate(IV) K2PtCl6 where the platinum is tetra-valenced. Crystal data for C8H16N2O6PtS2: monoclinic, space group P21/c, a = 9.8833(5), b = 8.6744(4), c = 18.6407(9) (A), β = 114.401(3)°, V = 1455.35(12) (A)3, Z = 4, Mr = 495.44, Dc = 2.261 g/cm3, F(000) = 944, μ = 9.950 mm-1, λ(MoKα) = 0.71073 (A), T = 293(2) K, 2θmax = 54.96o, GOOF = 1.033, R = 0.0350 and wR = 0.0785 for 2572 observed reflections with I > 2σ(I). X-ray diffraction studies reveal that the title complex has interesting weak metal-metal interactions and two molecules linked by metal-metal interaction exist as a group. Luminescent spectrum illuminates red emission of the complex at room temperature.