镧系金属一氢化物有效芯势研究

采用Cundari和Stevens等推导的有效芯势对镧系金属一氢化物进行了理论计算，以探讨镧系金属元素与氢的相互作用。结果表明所有镧系金属一氢化物基态时理论上是稳定的，最稳定的是SmH,最不稳定的是DyH;键长计算结果显示，基态时镧系金属一招兵买马花物有独立王国 收缩现象发生；红外振动频率理论计算值与实验结果一致；成键轨道中，金属原子轨道的贡献主要是s轨道和d轨道：从CeH至ErH(GdH)例外）随着外层电子的增加s轨道成分逐渐增大d轨道成分逐渐减小；从TmH和LuH（包括GdH)，成键轨道中金属原子轨道的贡献主要是d轨道，约为90％；约大多数镧系金属一氧化物的成键轨道中金属原子轨道f成分小于1％。     

量子位Heisenberg XX开链中边界量子位之间的纠缠

Heisenberg 开链对研究量子态在自旋链上的传递有重要的意义.本文研究了五量子位Heisenberg XX 开链中边界量子位之间的纠缠，在该系统中引入了磁杂质和系统杂质且它们之间满足线性关系时，该系统可以精确求解，此时边界量子位之间存在纠缠.选择合适的杂质参数和磁场参数，该边界纠缠的最大值可达到0.5. 关键词： Heisenberg XX开链 边界纠缠 杂质     

Oxidation process of SiGe on SOI substrates

The oxidation of SiGe film epitaxial grown on top of SOI wafers has been studied. These SiGe/SOI samples were oxidized at 700, 900, 1100 °C. Germanium atoms were rejected from SiGe film to SOI layer. A new Si_1−xGe_x (x is minimal) layer formed at SiGe/Si interface. As the germanium atoms diffused, the new Si_1−xGe_x (x is minimal) layer moved to Si/SiO₂ interface. Propagation of threading dislocation in SiGe film to SOI substrate was hindered by the new SiGe/Si interface. Strain in SOI substrate transferred from SiGe film was released through dislocation nucleation and propagation inner. The relaxation of SiGe film could be described as: strain relaxed through strain equalization and transfer process between SiGe film and SOI substrates. Raman spectroscopy was used to characterize the strain of SiGe film. Microstructure of SiGe/SOI was observed by transmission electron microscope (TEM).     

Advances in micro-perforated panel absorbers

Theoretical and experimental investigations on the performance of micro-perforated -panel absorbers are reviewed in this paper. By reviewing recent research work, this paper reveals a relationship between the maximum absorption coefficient and the limit of the absorption frequency bandwidth. It has been demonstrated that the absorption frequency bandwidth can be extended up to 3 or 4 octaves as the diameters of the micro-holes decrease. This has become possible with the development of the technologies for manufacturing micro-perforated panels, such as laser drilling, powder metallurgy, welded meshing and electro-etching to form micrometer order holes. In this paper, absorption characteristics of such absorbers in random fields and in high sound intensity are discussed both theoretically and experimentally. A new absorbing structure based on micro-perforated-panel absorbers demonstrate experimentally high sound absorption capability. This review shows that the micro-perforated-panel absorber has potentials to be one of ideal absorbing materials in the 21st century.     

金属薄膜制备及物性测量系列实验

介绍了由模拟真空实验和“金属薄膜的制备”、“金属薄膜厚度的测量”、“金属薄膜电阻率的测量”,以及“金属薄膜生长过程的动态监测”等4个实验组成的金属薄膜制备与物性测量系列实验.这组实验与现代科学技术发展联系紧密,仪器设备可靠,操作简单,适合于普通物理实验阶段的研究性教学.     

ZnSe及ZnSe/GaAs异质结构中压力导致的直接禁带向间接禁带的转变

用经验赝势方法计算了体ZnSe以及ZnSe/GaAs单异质结系统中ZnSe外延层г、X、L等特殊对称点导带底能量随压力的变化。结果表明，同Si、Ge、GaAs等半导体材料不同，ZnSe的X点导带底具有正的压力系数，但比г点的压力系数小，这是ZnSe材料以及ZnSe基异质结构材料发生直接禁带向间接禁带的转变时所需转变压力较大的根本原因。研究了ZnSe/GaAs异质结构中晶格失配造成的应变对外延层г、X、L对称点压力系数的影响，表明这种晶格失配造成的应变可以极大地减小ZnSe外延层材料由直接禁带向间接禁带的转变压力。     

双面加热环形通道内干涸点的确定

根据环形管通道内流体流动和换热的特点,以Kirillov和Smogalev提出的干涸点理论模型假设为基础,从最基本的质量守恒方程出发,并引入临界液膜厚度等相应的辅助模型,得到了双面加热环形通道内流动沸腾干涸点的理论模型。同时针对间隙为1.0mm和1.5mm的环形窄缝进行了低压低质量流速工况下干涸点的实验研究。比较发现理论模型预测值与实验结果基本相符。说明本文提出的理论模型适用于低压低流量条件下的窄环形通道。实验同时发现:环状流临界热流密度在系统压力为2.2MPa达到最大值,临界含汽量随质量流速的增大呈缓慢下降趋势。     

Fabrication of Dendrimer－like PAMAM Based on Silica Nanoparticles

A G 4.0 dendrimer-like poly (amido amine) (PAMAM) based on silica nanoparticles was fabricated via a divergent approach.It was built from γ-aminopropyi silica nanoparfides (APSN) core via repetitive addition of acrylate (MA) and hexylenediamine (HDA). FT-IR and EA were used to monitor the progress of dendrimer during each step. The amino group content of the resulting product increased from 0.49 to 3.72 mmol/g after the 4th generation. In addition, the percentage of grafting increased with increasing generation and reached to 65.9% after 4th generation. It was found that the resulting silica nanoparticles could be dispersed in methanol with a mean hydrodynamic particle diameter of 152.7 nm although the silica nanoparticles had agglomerated during the storage period.     

A Promising MoO_x-based Catalyst for n-Heptane Isomerization

The increasing demand for higher-octane gasoline and the regulations limiting the amount of aromatics in the fuel motivate the interest in catalytic isomerization of n-alkanes. In the last ten years, transition metal oxides or oxycarbides based on molybdenum or tungstate have attracted much attention due to their high activity and isomerization selectivity compared to the conventional bifunctional supported platinum catalyst and high resistance to sulphur and nitrogen catalyst poisons1-5. Ma…     

Effect of ion impinging on the microstructure and field emission of carbon nanotubes

Effects of ion impinging on the microstructure and field electron emission properties of screen-printed carbon nanotube films were investigated. We observed that the plasma treatment modified the microstructure of CNTs along with the remarkable increase of emission site density. With the prolongation of ion impinging time, the emission current falls down first, and then rises up to higher than that of the untreated films. It is proposed that the change of emission characteristics is due to the different emission mechanisms. After the treatment, electrons are emitted predominantly from the nano-nodes on the tube wall instead from the nanotube tips.