Magnetic and electrical transport properties of delta-doped amorphous Ge:Mn magnetic semiconductors

We report on the growth and characterization of delta-doped amorphous Ge:Mn diluted magnetic semiconductor thin films on GaAs (0 0 1) substrates. The fabricated samples exhibit different magnetic behaviors, depending on the Mn doping concentration. The Curie temperature was found to be dependent on both the Mn doping concentration and spacing between the doping layers. A sharp drop in magnetization and rise in resistivity are observed at low temperature in samples with high Mn doping concentrations, which is also accompanied by a negative thermal remanent magnetization (TRM) in the higher temperature range. The temperature at which the magnetization starts to drop and the negative TRM appears show a correlation with the Mn doping concentration. The experimental results are discussed based on the formation of ferromagnetic regions at high temperature and antiferromagnetic coupling between these regions at low temperature.     

Quantum Dynamics of Systems Connected by a Canonical Transformation

Quantum Hamiltonian systems corresponding to classical systems related by a general canonical transformation are considered. The differential equation to find the unitary operator, which corresponds to the canonical transformation and connects quantum states of the original and transformed systems, is obtained. The propagator associated with their wave functions is found by the unitary operator. Quantum systems related by a linear canonical point transformation are analyzed. The results are tested by finding the wave functions of the under-, critical-, and over-damped harmonic oscillator from the wave functions of the harmonic oscillator, free-particle system, and negative harmonic potential system, using the unitary operator to connect them, respectively.     

4英寸热氧化硅衬底上磁性隧道结的微制备

就如何在4英寸热氧化硅衬底上沉积高质量的磁性隧道结纳米多层薄膜材料和如何利用光刻方法微加工制备均匀性较好的磁性隧道结方面做了初步研究，并对磁性隧 道结的磁电性质及其工作特性进行了初步测量和讨论.利用现有的光刻设备和工艺条 件在4英寸热氧化硅衬底上直接制备出的磁性隧道结，其结电阻与面积的积 矢的绝对误差在10% 以内，隧穿磁电阻的绝对误差在7% 以内，样品的磁性隧道结性质具有较好的均匀性和一致性，可以满足研制磁随机存储器存储单元演示器件的基本要求. 关键词： 磁性隧道结 隧穿磁电阻 磁随机存储器 4英寸热氧化硅衬底     

微波吸收法研究Mn,Cu掺杂对ZnS:Mn,Cu光生载流子复合过程的影响

采用微波吸收法，测量了ZnS:Mn,Cu粉末材料受到超短脉冲激光激发后，其光生电子和浅束缚态电子的衰减过程.发现Mn,Cu的浓度对导带电子的寿命有明显的影响，提高掺杂浓度会使光生电子的寿命大大缩短，还研究了掺杂浓度对光致发光强度的影响. 关键词： 发光材料 硫化锌 光电子 微波吸收技术     

On the limit cycles of a quintic planar vector field

This paper concerns the number and distributions of limit cycles in a Z_2-equivariant quintic planar vector field.25 limit cycles are found in this special planar polynomial system and four different configurations of these limit cycles are also given by using the methods of the bifurcation theory and the qualitative analysis of the differential equation.It can be concluded that H(5)≥25=5~2, where H(5)is the Hilbert number for quintic polynomial systems.The results obtained are useful to study the weakened 16th Hilbert problem.     

聚能射流的断裂时间

从描述聚能射流失稳的一维近似方程出发，导出了聚能射流断裂时间的近似公式。这个近似公式定量显示了屈服应力、本构关系、粘度和径向收缩效应等对射流断裂时间的影响，在４个不同的特殊近似下，可以自然演化为近１０年来所发表的几个半经验解析公式，并且在合理的参数范围内，公式给出的断裂时间曲线覆盖了射流断裂时间的全部实验点。     

OnM-ideals and best approximation

In this paper we will prove some theorems on theM-ideals of compact operators and the best approximation of quasitriangular operator algebras. These results improve and extend the known results in [4, 5, 7].This work is supported in part by the National Natural Science Foundation of China.     

A molecular network model to describe the nonlinear viscoelastic behavior of polymers

A transient molecular network model is built to describe the nonlinear viscoelasticity of polymers by considering the effect of entanglement loss and regeneration on the relaxation of molecular strands. It is an extension of previous network theories. The experimental data on three thermoplastic polymers (ABS, PVC and PA6) obtained under various loading conditions are used to test the model. Agreement between the theoretical and experimental curves shows that the suggested model can describe successfully the relaxation behavior of the thermoplastic polymers under different loading rates by using relatively few relaxation modes. Thus the micromechanism responsible for strain-rate dependence of relaxation process and the origin of nonlinear viscoelasticity may be disclosed. The project supported by the National Natural Science Foundation of China and Doctorial Fund     

Activity coefficients for NaBr in aqueous ternary solutions with sodium propionate and butyrate from EMF measurements

The activity coefficients of NaBr in the NaBr–NaPropionate–H₂O and NaBr–NaButyrate–H₂O systems were determined from EMF measurements at constant total ionic strength of 0.1 0.5 1.0 1.5 2.0 and 2.5 mol-kg^–1 and at 25° C. The activity coefficients were fitted using Scatchard, Pitzer and Lim equations. Finally the excess Gibbs free energy of these mixtures were also calculated.     

A posteriori error analysis for linearization of nonlinear elliptic problems and their discretizations

The paper is devoted to a posteriori quantitative analysis for errors caused by linearization of non-linear elliptic boundary value problems and their finite element realizations. We employ duality theory in convex analysis to derive computable bounds on the difference between the solution of a non-linear problem and the solution of the linearized problem, by using the solution of the linearized problem only. We also derive computable bounds on differences between finite element solutions of the nonlinear problem and finite element solutions of the linearized problem, by using finite element solutions of the linearized problem only. Numerical experiments show that our a posteriori error bounds are efficient.