Approaches to improving critical current density of YBCO superconducting thick films deposited by electrophoresis

The irreversibility field (Hirr) of Y-based superconductor is much higher than that of Bi-based superconductor. Y-based superconductor is capable of maintaining stable electrical currents in high magnetic field and electric field, so it is a better suited mate-rial for electric-current applications. Commonly, the Y-based tapes comprise a YBCO thick film deposited on a flexible substrate, typically with an intermediate buffer layer, and an overcoat of noble metal. In this process, the interm…     

Fabrication of Dendrimer－like PAMAM Based on Silica Nanoparticles

A G 4.0 dendrimer-like poly (amido amine) (PAMAM) based on silica nanoparticles was fabricated via a divergent approach.It was built from γ-aminopropyi silica nanoparfides (APSN) core via repetitive addition of acrylate (MA) and hexylenediamine (HDA). FT-IR and EA were used to monitor the progress of dendrimer during each step. The amino group content of the resulting product increased from 0.49 to 3.72 mmol/g after the 4th generation. In addition, the percentage of grafting increased with increasing generation and reached to 65.9% after 4th generation. It was found that the resulting silica nanoparticles could be dispersed in methanol with a mean hydrodynamic particle diameter of 152.7 nm although the silica nanoparticles had agglomerated during the storage period.     

A theoretical study of the ion pair SN2 reaction between lithium isocyanates with methyl fluoride with inversion and retention mechanism

This paper is devoted to a detailed theoretical study of an ion pair S_N2 reaction LiNCO+CH₃F in the gas phase and in solution at the level of MP2(full)/6-31+G**//HF/6-31+G**. Two possible reaction mechanisms, inversion and retention, are discussed. There are eight possible reaction pathways. The inversion mechanism is more favorable no matter in the gas phase or in solution based on analyses of the transition structures. Methyl isocyanate should form preferentially in the gas phase and more stable methyl cyanate is the main product in solution. The retardation of the reaction in solvents was attributed to the difference in solvation in the separated reactants and in the transition state.     

波片复合旋光器研究

利用矩阵光学方法，分析了波片复合旋光器的理论基础，给出了二元和三元复合波片旋光器的条件及其旋光角的大小的数学表达式，并根据此理论作了典型设计。结果表明，旋光角的大小与各波片的延迟量和它们的快轴同X轴的夹角有关。     

Photoluminescence linewidth broadening due to alloy/thickness fluctuation of CdxZn1 − xSe/ZnSe triple quantum wells

Photoluminescence (PL) linewidth broadening of Cd_xZn_{1 − x}Se/ZnSe triple quantum wells, grown on GaAs substrates by molecular beam epitaxy (MBE), has been investigated. Various quantum well (QW) samples have been prepared with different QW thickness and composition (Cd-composition). Measured and calculated PL linewidth are compared. Both composition and thickness fluctuations are considered for the calculation with the parameters such as the volume of exciton, nominal thickness and composition of QWs. Surface roughness measured by atomic force microscopy (AFM) is used to estimate the interface roughness. Results show that when Cd-composition increases additional linewidth broadening due to Zn/Cd interdiffusion is enhanced.     

正交各向异性矩形板受迫振动的三维分析

从正交各向异性三维弹性动力学的控制方程出发，在求得四边简支矩形板自由振动频率和位移振型的基础上，构造了受迫振动的位移函数；利用自由振动位移振型的正交性，将控制方程的空间变量和时间变量分离，得到了广义质量、广义力和频率表示的关于时间的2阶常微分方程，从而得到了正交各向异性弹性矩形板在受迫振动下的位移场和应力场．给出了本文方法与薄板理论的算例．     

相对论重离子碰撞实验中混合事件方法的研究

把RQMD(Relativistic Quantum Molecular Dynamics)产生器产生的数据输入作为原始事例取样,讨论了在比较复杂的背景情况下,一种新的混合事件方法,用以证实在相对论重离子碰撞实验中高能量激发共振态的存在.并以共振态重子Δ⁺⁺为例演示了这一方法的应用.     

模糊关系矩阵传递闭包的Warshall算法

通过对照关系的传递闭包和模糊关系的传递闭包，把求关系矩阵的传递闭包的算法完整地推广到模糊关系矩阵上。     

蓝宝石R面上ZnO薄膜的NH3掺杂研究

以NH₃为掺杂源,利用金属有机化学气相沉积(MOCVD)系统在蓝宝石R面上生长出掺氮ZnO薄膜。通过XRD,SEM测量优化了其生长参数,在610℃和在80sccm的NH₃流量下生长出了〈1120〉单一取向的ZnO薄膜。经Hall电阻率测量,得知该薄膜呈现弱p型或高电阻率,并对其光电子能谱进行了研究。     

A boosted voltage generator for low-voltage DRAMs

This paper proposes a new two-stage two-phase VPP charge pump configured in such a manner that the body effect and the threshold voltage loss are eliminated. The newly proposed circuit is fabricated using 0.18 μm triple-well CMOS process and the measurement result shows that the VPP level tracks 3VDD when VDD is above the threshold voltage.