源气体对沉积的a-C∶F∶H薄膜结构的影响

采用微波电子回旋共振等离子体化学气相沉积(MWPECRCVD)方法,使用不同的源气体(CHF3CH4,CHF3C2H2,CHF3C6H6)体系制备了aC∶F∶H薄膜.由于CH4,C2H2,C6H6气体在等离子体中的分解反应不同导致了薄膜的沉积速率和结构上的差异.红外吸收谱的结果表明,用C6H6CHF3作为源气体沉积的薄膜中几乎不含H,而用C2H2CHF3所沉积的薄膜中的含氟量最高,其相应的CF振动峰位向高频方向偏移.薄膜的真空退火结果表明,aC∶F∶H薄膜的热稳定性除了取决于薄膜的CC键浓度外,还与CC键 关键词： 氟化非晶碳膜 电子回旋共振化学气相沉积 红外吸收光谱     

Mean Value on the Difference Between a Quadratic Residue and Its Inverse Modulo p

The main purpose of this paper is to use the generalized Bernoulli numbers, Gauss sums and the mean value theorems of Dirichlet L-functions between a quadratic residue and its inverse modulo p value formula. to study the asymptotic property of the difference （a prime）, and to give an interesting hybrid mean     

Measurement of small-signal and large-signal responses of packaged laser modules at high temperature

In this paper, the pulsed injection method is extended to measure the chip temperature of various packaged laser modules, such as the DFB laser modules, the FP laser modules, and the EML laser modules. An optimal injection condition is obtained by investigating the dependence of the lasing wavelength on the width and period of the injection pulse in a relatively wide temperature range. The small-signal frequency responses and large-signal performances of packaged laser modules at different chip temperature are measured. The adiabatic small-signal modulation characteristics of packaged LD are first extracted. In the large-signal measurement, the effects of chip temperature, bias current and driving signal on the performances of the laser modules are discussed. It has been found that the large-signal performances of the EML modules depend on the different red-shift speeds of the DFB and EAM sections as chip temperature varying, and the optimal characteristics may be achieved at higher temperature.     

40,48Ca+90,96Zr融合反应的动力学模型研究

应用改进的量子分子动力学模型,在严格挑选初始核考虑弹靶结构效应的基础上,研究了近垒和垒上融合反应^40,48Ca+^90,96Zr. 研究表明: 4个反应的理论计算截面与实验值很好符合; 丰中子反应⁴⁰Ca+⁹⁶Zr的垒下融合截面比其他3个反应有明显增强的现象.为了理解丰中子反应⁴⁰Ca+⁹⁶Zr与⁴⁰Ca+⁹⁰Zr相比垒下融合截面增强,而Ca+⁹⁶Zr垒下融合截面没有明显增强的原因, 进一步分析了484个反应的融合位垒,中子转移与融合位垒的关系、中子转移与Q值的关系,结果表明: 正反应Q值会引起核子(特别是中子)转移的增强,从而导致动力学融合位垒的下降和垒下融合截面增强.     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

热丝CVD生长金刚石薄膜喇曼散射研究

本文报道热丝化学气相沉积法（ＨＦＣＶＤ）生长金钢石薄膜的喇曼散射结果。选取多种峰型，对金钢石薄膜喇曼谱（１１０－１８００ｃｍ－１）采用最小二乘法进行非线性拟合，得到最佳拟合模型，其计算得到的拟合曲线怀实验谱图符合得较好。该模型揭示，石墨Ｄ峰（１３５５ｃｍ－１）是金刚石薄膜喇曼谱中不可缺少的一个组份，并且结合石墨Ｄ峰和金刚石喇曼的空间相关线型，可以解释金刚石喇曼区特殊峰形的物理机制，拟合参量的进一步     

Hamiltonian formulation of generalized quantum dynamics

The Hamiltonian formulation of the usual complex quantum mechanics in the theory of generalized quantum dynamics is discussed. After the total trace Lagrangian, total trace Hamiltonian and two kinds of Poisson brackets are introduced, both the equations of motion of some total trace functionals which are expressed by total trace Poisson brackets and the equations of motion of some operators which are expressed by the without-total-trace Poisson brackets are obtained. Then a set of basic equations of motion of the usual complex quantum mechanics are obtained, which are also expressed by the Poisson brackets and total trace Hamiltonian in the generalized quantum dynamics. The set of equations of motion are consistent with the corresponding Heisenberg equations. Project supported by Prof. T.D. Lee’s NNSC Grant, the National Natural Science Foundation of China, the Foundation of Ph. D. Directing Programme of Chinese University, and the Chinese Academy of Sciences.     

巯基丁二胺铜单层修饰金电极上HIV-p24抗原的电化学免疫检测

制备了用巯基丁二胺铜(CuL)修饰的金电极并用作HIV-p24抗原蛋白(简称p24)免疫检测的化学传感器。CuL通过单层自组装固定在金电极表面,其覆盖率为1.02×10-11mol.cm-2,在含有1.0 mmol.L-1过氧化氢并在pH 6.2的磷酸盐缓冲溶液中,制备的校正曲线的线性范围为0.5-150μg.L-1p24对相应的伏安响应,方法的检出限为0.2μg.L-1。在10μg.L-1p24浓度水平作精密度试验,得RSD值为3.5%,于试样中分别加入5,15,20及30μg.L-1p24进行回收率试验,所得结果在98%-102%之间。此方法毋需另加电子传递媒介体。应用此方法于临床血清分析,所得结果与放射性免疫法的结果一致,且所得RSD值均小于0.3%。