一维细胞神经网络的完全稳定性分析

运用Lyapunov函数方法,讨论了一维细胞神经网络模型的完全稳定性问题,给出了四组使模型具有完全稳定的充分条件.     

Einstein relation in chemically doped organic semiconductors

Based on the assumption of Gaussian energy distributions of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO), analytical expressions of generalized Einstein relation in chemically doped organic semiconductor are developed, by approximation of Coulomb traps with a rectangle potential well. Numerical calculations show that traditional Einstein relations do not hold for chemically doped organic semiconductors. Similar to physical doping, the dependence of diffusion coefficient to mobility D/μ ratio on the carrier concentration has a maximum. An essential difference between chemical doping and physical doping is that, the D/μ ratio in chemically doped organic semiconductors depends not only on carrier concentration and doping concentration, but also on the applied electric field. PACS 71.20.Rv; 72.90.+y; 73.50.-h     

Non-Euler–Lagrangian Pareto-optimality Conditions for Dynamic Multiple Criterion Decision Problems

In this paper the problem of verifying the Pareto-optimality of a given solution to a dynamic multiple-criterion decision (DMCD) problem is investigated. For this purpose, some new conditions are derived for Pareto-optimality of DMCD problems. In the literature, Pareto-optimality is characterized by means of Euler-Lagrangian differential equations. There exist problems in production and inventory control to which these conditions cannot be applied directly (Song 1997). Thus, it is necessary to explore new conditions for Pareto-optimality of DMCD problems. With some mild assumptions on the objective functionals, we develop necessary and/or sufficient conditions for Pareto-optimality in the sprit of optimization theory. Both linear and non-linear cases are considered.     

Crystal and molecular structure of (μ-p-CH3C6H4C2S) (μ-n-C3H7S)Fe2(CO)6Co2(CO)6

The crystal and molecular structure of the complex containing cobalt-carbon and iron-sulfur cluster cores, (μ-p-CH₃C₆H₄C₂S) (μ-n-C₃H₇S)Fe₂(CO)₆Co₂(CO)₆, has been determined by X-ray diffraction method. The crystals are triclinic, space group P&1bar;, with a — 9.139(2), b=9.610(1), c-17.183(2) Å, α = 84.36(1), β-89.45(1), γ=88.15(1)°, V-1501.0 ų; Z=2, D_c=1.74 g/cm³. R=0.072, Rw=0.081. The results of the structure determination show a cobalt-carbon cluster core formed through the reaction of (μ-p-CH₃C₆H₄C₂S)(μ-n-C₃H₇S)Fe₂(CO)₆ with Co₂(CO)₈. In the cobalt-carbon cluster core, the bond length of the original C≡C lengthened to 1.324 Å which is close to the typical value of carbon-carbon double bond. The groups connecting the carbons of the cluster core are in cis position and lie on the opposite side of cobalt atoms. In this complex, the conformation of —SC₃H₇ is e-type, while that of —SC₂C₆H₄CH₃ is a-type.     

MODIS通道1和通道2大气订正的一种快速实用方法

提出了利用气象资料对MODIS影像进行大气校正的一种快速实用方法.读取MODIS前两个通道250min的反射率,采用常用的黑色目标扣除法(Dark-object subtraction)计算天空程辐射,通过卫星过境时刻的气象能见度和水汽资料计算大气透过率,最后推导出目标物的反射率.通过比较两个邻近日期MODIS影像校正前后的归一化植被指数(NDVI)值,得出利用本文提出的方法对MODIS进行大气校正所得到的NDVI值更接近实际情况.结果表明:利用气象能见度和水汽压可以对MODIS数据进行快速有效的大气校正.     

激光准直仪的设计性物理实验

介绍了激光准直仪的结构、工作原理及其在设计性物理实验中的应用     

基片光学特性对薄膜光强透过谱的影响

在考虑基片与空气界面反射率以及基片吸收不能忽略的情况下，对常见的基片上薄膜的光强透过率公式进行了修正，导出了该情况下的透过率公式．以非晶硅薄膜为研究对象，采用模拟计算说明基片光学特性对薄膜光强透过谱的影响．     

Interior point cutting plane method for optimal power flow

In this paper, an interior point cutting plane method (IPCPM)is applied to solve optimal power flow (OPF) problems. Comparedwith the simplex cutting plane method (SCPM), the IPCPM is simpler,and efficient because of its polynomial-time characteristic.Issues in implementing IPCPM for OPF problems are addressed,including (1) how to generate cutting planes without using thesimplex tableau, (2) how to identify the basis variables inIPCPM, and (3) how to generate mixed integer cutting planes.The calculation speed of the proposed algorithm is further enhancedby utilizing the sparsity features of the OPF formulation. Numericalsimulations on IEEE 14-300-bus test systems have shown thatthe proposed method is effective.     

p型导电掺In的SnO_2薄膜的制备及表征

采用溶胶 凝胶提拉法成功地制备了p型导电掺In的SnO2 薄膜 .x射线衍射测试结果表明 ,掺In的SnO2 薄膜保持SnO2 的金红石结构 .吸收谱测试结果表明 ,掺In的SnO2 禁带宽度为 3 8eV .霍尔测量结果表明 ,空穴浓度与热处理温度有很大的关系 ,5 2 5℃为最佳热处理的温度 .铟锡原子比在 0 0 5— 0 2 0范围内 ,空穴的浓度与In的含量有直接的关系 ,并随In含量的增加而增加     

具有种内互惠作用的Lotka-Volterra互惠共存模型

对具有种内互惠作用的Lotka-Volterra互惠共存模型进行了完整的全局分析，得到了一些新的结果。