透镜空间L~1(p)上向量丛的示性类

本文讨论了透镜空间 L1( p)的上同调环中生成元的运算性质 ,进而利用 L1( p)的 KO -结构得到了L1( p)上任一向量丛的全 Stiefel-Whitney类     

高功率飞秒脉冲激光器的进展

概述了超短激光脉冲技术发展的历程。详尽的论述了啁啾脉冲放大技术的原理和一些关键技术 ,并对当今飞秒激光器研究发展的状况进行了综述。在分析其应用前景的基础上 ,进一步指出了这一技术领域未来的发展趋势。结果表明 ,脉冲激光放大系统以后的发展方向是 :更短脉冲 ;追求更高峰值功率 ;连续光谱调谐化 ;向小型化乃至全光纤化发展。     

FAR-INFRARED AND INFRARED REFLECTIONS OF Tl2Ba2Ca2Cu3O10 FILM

The far-infrared and infrared reflection spectra of Tl₂Ba₂Ca₂Cu₃O₁₀ superconducting film are reported in this paper. It is found there are three sharp reflection edges in both the superconducting and normal states, their positions being near ≈ 150, ≈ 350 and ≈600 cm^-1. We attribute these reflection spectra to the Drude free carriers and a wide mid-infrared absorption band. When the incident angle increases from 7° to 30°, some additional stractures appear in the refiection spectra, which are the A_2u phonon modes vibrating along c-axis.     

Research on sound radiation from body in free field

I.IntroductionWhenastructurcvibratcs,itsvibratingsurfacewillmakesurroundingmediummovetogethcrwithit.Ifthernotionissofastthatthcmediumroundthestructureproduccaloca1contractionandcxpansionandthcypropagatefaraway,thesoundradiationisformed.Itispossiblctodcscribeanalytica11ytheradiationfic1dofsimplyandregularlyshapcdsourcessuchaspointsoundsourccs,spherica1soundsourccsandinflnite1engthllnearsoundsourccs,butitisa1mostimpossib1ctosolvetheradiationfiledbyanyanalyt-ica1methodforsourcesofvcrycomplicateds…     

SWITRIM��������ƺ�ʹ�øſ�

研制出了用于计算氚投料量在FEB聚变堆各个子系统中的分布及其随时间变化的数值模拟程序包SWITRIM。通过近5年的使用，表明其运行良好、计算结果可靠。用SWITRIM数值模拟研究了聚变堆起动过程中的“氚坑深度和氚坑时间”新现象。简单介绍了SWITRIM程序包的组成和用户使用说明以及最新的运用等。     

Windows CE.Net嵌入式操作系统本地化研究及实现

本文对嵌入式Windows CE.Net操作系统的主要体系结构进行剖析.研究设计出了维吾尔文本地化环境,利用资源编译器编译和反编译功能,构建了基于Windows CE.Net平台的维吾尔文图形用户界面资源库,实现Windows CE.Net的界面维文化和基于Windows CE.Net的应用程序的维文支持;开发了输入法程序,实现Windows CE.Net的维吾尔文字键盘输入和软键盘输入;通过编制维吾尔文字库,为Windows CE.Net平台下维吾尔文字的显示、打印提供了基础.     

HPLC-MS/MS技术在中华绒螯蟹硝基呋喃类代谢物残留量检测中的应用

建立了中华绒螯蟹中硝基呋喃类代谢物残留量的液相色谱-串联质谱检测方法.取均质后的中华绒螯蟹可食部分样品,用盐酸水解组织中蛋白结合代谢物,经2-硝基苯甲醛37℃过夜衍生化,调节pH值至约7.0～7.4后,用乙酸乙酯提取,正己烷净化.选用电喷雾离子源,在正离子、多反应监测方式模式下进行定性,以同位素内标法进行定量.方法的检出限为0.5 μg·kg-1,工作曲线的线性范围为1.25～50.0 μg·L-1.在添加浓度为0.5～10.0 μg·kg-1的范围内,AMOZ、SEM、AHD和AOZ的回收率分别在92.8%～106%、84.5%～94.6%、80.6%～98.6%和88.4%～105%之间,相对标准偏差均小于10%.     

四（对-羟基苯基）卟啉氧合配合物的室温固相合成，表征及氧合能力

采用固相反应合成了四羟基苯基卟啉与与Fe^2＋,Co^2＋金属离子的配合物,在室温下,将其与分子O2作用,提纯后得到两种固态氧合配合物．通过元素分析、红外光谱（IR）、核磁共振氢谱（^1HNMR）、电导、热分析（TG／DTA）、紫外光谱（UV）等测试手段确定了氧合配合物的组成为[Co·THPP·O2]（NO3）2·2H2O、[Fe·THPP·O2]Cl2·2H2O]，可知1mol配合物吸收了1molO2,采用失重法测定了氧合配合物中的配位氧,确定1mol金属配合物吸收1molO2形成超氧配合物．     

Investigation of Scale Exponents of Complete and Incomplete Aggregation-Annihilation Processes

The complete and incomplete aggregation-annihilation processes are investigated with the method of generating function, and the scale exponents are obtained exactly. We find that the scale exponents of incomplete aggregation-annihilation process are different from the previous exponents obtained by different methods. The time dependence of the total number of clusters and the total mass of clusters are analytically obtained.     

Interfacial structure and electrical properties of LaAlO3 gate dielectric films on Si by metalorganic chemical vapor deposition

LaAlO₃ (LAO) gate dielectric films were deposited on Si substrates by low-pressure metalorganic chemical vapor deposition. The interfacial structure and composition distribution were investigated by high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), secondary-ion mass spectroscopy (SIMS), and Auger-electron spectroscopy (AES). HRTEM confirms that there exists an interfacial layer between LAO and Si in most samples. AES, SIMS, and XPS analyses indicate that the interfacial layer is compositionally graded La–Al silicate and the Al element is severely deficient close to the Si surface. Electrical properties of LAO films were evaluated. No evident difference in electrical properties between samples with and without native SiO₂ layers was observed. The electrical properties are discussed in terms of LAO growth mechanisms, in relation to the interfacial structure. PACS 73.40.Qv; 81.15.Gh; 77.55.+f; 68.35.-p