Multiple-State Storage Capability of Stacked Chalcogenide Films （Si16Sb33Te51/Si4Sb45Te51/Si11Sb39Te50） for Phase Change Memory

The multiple-state storage capability of phase change memory （PCM） is confirmed by using stacked chalcogenide films as the storage medium. The current-voltage characteristics and the resistance-current characteristics of the PCM clearly indicate that four states can be stored in this stacked film structure. Qualitative analysis indicates that the multiple-state storage capability of this stacked film structure is due to successive crystallizations in different Si-Sb-Te layers triggered by different amplitude currents.     

圆形振动膜ZnO压电微传声器的研制

本文介绍了一种新型圆形振动膜ZnO压电微传声器的制备，并对传声器制备的工艺过程进行了较为详细的描述。圆形振动膜的压电传卢器与以前方形振动膜结构设计相比，较大幅度提高了传声器的灵敏度和成品率，灵敏度达到-70dB（相对于1V／Pa），成品率达到80％。     

正方分布的4×4单模光纤熔锥耦合器耦合特性分析

本文以线性耦合波方程为基础,采用散射矩阵的方法讨论了具有正方分布的4×4单模光纤熔锥形耦合器的耦合特性,并与实验作了比较,得到了比较一致的结果。     

存在滑移时两圆球间的幂律流体挤压流动

基于Reynolds润滑理论分析了壁面滑移对任意圆球颗粒间幂律流体的挤压流动的影响。研究表明有壁面滑移时挤压流动的粘性力可通过引进本文定义的滑移修正系数分离出无滑移解。推导出的挤压力滑移修正系数是一积分表达式，依赖于滑移参数、幂律指数、球间隙和积分上限。一般地壁面滑移导致粘性力减小，粘性力的减小量随幂律指数的增大而增大，表明壁面滑移对剪切增稠流变材料有更大的影响；粘性力的减小量还随着滑移参数的增大而增加，而这恰与假设相符合；粘性力的减小量又随球间隙减小或积分上限的增大（从液桥情况到完全浸渍）而减小直到趋于常数，这一特性在离散元模拟时可以有效地减少计算量。     

Large second-order optical nonlinearities of s-triazine derivatives: View from micro molecules to macro crystals

Organic nonlinear optics (NLO) is also called mo-lecular nonlinear optics. In recent years organic mate-rials have been intensively studied because of their large NLO coefficients and structural diversities[1―3]. Second harmonic generation (SHG) is a bas…     

质子滴线区新的缓发质子先驱核121Ce

藉助核反应⁹²Mo(³²S ,3n)产生了未知的缓发质子先驱核¹²¹Ce ,并利用氦喷嘴快速带传输系统和“p-γ”符合方法对它进行了鉴别 .测定了¹²¹Ce的半衰期 ( 1.1±0 .1 )s,观测了它的β缓发质子能谱 ,粗略地估计了它的β缓发质子衰变道的分支比约为1% .首次观测了先驱核¹¹⁹Ba,¹²¹Ba和¹²²La经过β缓发衰变在“子核”中产生的低位能级到基态的γ 跃迁.     

三溴偶氮胂褪色光度法测定土壤及化学试剂中铬（VI）

在 0 .4 8mol/L硝酸介质中 ,Cr( )与三溴偶氮胂 (TBA)发生褪色反应 ,该反应的表观摩尔吸光系数ε516nm=1.0 4× 10 5L· mol-1· cm-1,铬 ( )含量在 0— 1.0× 10 -4 g/L范围内呈良好线性关系。该法用于土样及化学试剂中 Cr( )的测定 ,结果令人满意。     

分离变量法与等腰直角三角形波导的边值问题

根据叠加原理，讨论等腰直角三角形波导边值问题的IE波解和TM波解，纠正有关文献中的错误解法，指出分离变量法的适用条件。     

体心立方金属中空位迁移规律

本文在考虑空位浓度对空位迁移能的影响和双空位效应的情况下,给出了体心立方金属中空位流与空位浓度梯度之间的定量关系。并指出当空位浓度超过一个临界值时,空位将向其浓度大的地方迁移。本文所用方法也可用于其它金属。 关键词：     

Design and Fabrication of 1.06 μm Resonant-Cavity Enhanced Reflective Modulator with GaInAs/GaAs Quantum Wells

A resonant-cavity enhanced reflective optical modulator is designed and fabricated, with three groups of three highly strained InGaAs/GaAs quantum wells in the cavity, for low voltage and high contrast ratio operation. The quantum wells are positioned in antinodes of the optical standing wave. The modulator is grown in a single growth step in an molecular beam epitaxy system, using GaAs/AlAs distributed Bragg reflectors as both the top and bottom mirrors. Results show that the reflection device has a modulation extinction of 3 dB at -4.5 V bias.