Laser Induced Damage Threshold at 355 and 1064nm of Ta2O5 Films of Different Phases

Ta2O5 films axe deposited on fused silica substrates by conventional electron beam evaporation method. By annealing at different temperatures, Ta2 O5 films of amorphous, hexagonal and orthorhombic phases are obtained and confirmed by x-ray diffractometer （XRD） results. X-ray photoelectron spectroscopy （XPS） analysis shows that chemical composition of all the films is stoichiometry. It is found that the amorphous Ta2 O5 film achieves the highest laser induced damage threshold （LIDT） either at 355 or 1064nm, followed by hexagonal phase and finally orthorhombic phase. The damage morphologies at 355 and 1064nm are different as the former shows a uniform fused area while the latter is centred on one or more defect points, which is induced by different damage mechanisms. The decrease of the LIDT at 1064nm is attributed to the increasing structural defect, while at 355nm is due to the combination effect of the increasing structural defect and decreasing band gap energy.     

反射型导模共振滤波器设计

导模共振滤波器由于其高峰值反射率，低旁带反射，窄带以及带宽可控等优良特性引起了人们极大的关注，采用亚波长光栅的导模共振效应可以实现传统基于高低折射率介质的多层膜滤波器所无法实现的特殊功能，在弱调制模式下，其共振带宽可以被压缩到零点几纳米，但是由于介质表面和空气层的菲涅耳反射，使得偏离或者远离共振区时的反射率偏高，根据等效介质理论，亚波长光栅在远离共振区可以被看为均匀的薄膜，本文通过对导模共振光栅进行单层、双层以及三层抗反射设计，有效的降低了导模共振光栅的旁带反射率，从而在可见光波段获得了性能优良的共振滤波     

Broadband non-polarizing beam splitter based on guided mode resonance effect

A broadband non-polarizing beam splitter (NPBS) operating in the telecommunication C+L band is designed by using the guided mode resonance effect of periodic silicon-on-insulator (SOI) elements. It is shown that this double layer SOI structure can provide ～50/50 beam ratio with the maximum divergences between reflection and transmission being less than 8% over the spectrum of 1.4 μm～1.7 μm and 1% in the telecommunication band for both TE and TM polarizations. The physical basis of this broadband non-polarizing property is on the simultaneous excitation of the TE and TM strong modulation waveguide modes near the designed spectrum band. Meanwhile, the electric field distributions for both TE and TM polarizations verify the resonant origin of spectrum in the periodic SOI structure. Furthermore, it is demonstrated with our calculations that the beam splitter proposed here is tolerant to the deviations of incident angle and structure parameters, which make it very easy to be fabricated with current IC technology.     

Excellent polarization-independent reflector based on guided mode resonance effect

A broad band polarization-independent reflector working in the telecommunication C+L band is proposed using the guided mode resonance effect of a periodic surface relief element deposited by a layer of silicon medium. It is shown that this structure can provide high reflection (R>99.5%) and wide angular bandwidth (θ≈20°, R>98%) for both TE and TM polarizations over a wide spectrum band 1.5 μm～1.6 μm. Furthermore, it is found by rigorous coupled wave analysis that the polarization-independent reflector proposed here is tolerant of a deviation of grating thickness, which makes it very easy to fabricate in experiments.