一种暴露CeO2{100}晶面的铈钛复合氧化物合成及其负载Au催化剂一氧化碳低温氧化性能研究

利用水热法制备了一种具有花朵状形貌的铈钛复合氧化物,该复合氧化物主要暴露CeO₂{100}晶面。SEM、XRD表征结果表明,花朵状铈钛复合氧化物的形成主要分为两个阶段,即无定型的快速生长及缓慢结晶两个过程;在制备过程中,铈钛比例、KOH浓度、晶化时间和焙烧温度是该形貌形成的主要影响因素。其负载Au催化剂后常温即能实现CO的完全转化;TEM和H₂-TPR结果表明,暴露的CeO₂{100}晶面以及Au和载体的强相互作用是该催化剂具有高活性的主要原因。     

圆幂定理及其应用

圆幂定理,实质上是反映两条相交直线与圆的位置关系的性质定理,共包含如正三个定理(1)相交弦定理;(2)割线定理;(3)切割线定理.如果把以上三定理按交点在圆内和圆外进行讨论,则交点在圆内:相交弦定理;交点在圆外;割线定理、切割线定理、切线长定理.     

七(2,6-二-O-戊基-3-O-三氟乙酰基)-β-环糊精用于对映体分离

用七（２，６－二－Ｏ－戊基－３－Ｏ－三氟乙酰基）－β－环糊精分离了胺类、氨基酸类、环氧化物和卤代烃等对映体，测定了α、－Δ（ΔＨ）、－Δ（ΔＳ）及Δ（ΔＨ）／Δ（ΔＳ）值，通过和文献数据比较，观察到同系物的Δ（ΔＨ）／Δ（ΔＳ）值接近于一个常数，且和所用手性固定相及是否发生“包结”作用无关。     

二维非定常多物质流体运动的一个具高分辨率的Godunov型差分方法

对二维多物质非定常可压缩流体运动,给出一个具高分辨率的非等距矩形网格 Godunov型差分方法,介绍了一种简便的物质交界面近似表示方法,给出两个数值例子的结果。     

苯乙烯—环氧乙烷嵌段共聚物的阴离子聚合与表征

用二苯甲烷钾为引发剂,阴离子聚合法合成了苯乙烯（Ｓｔ）－环氧乙烷（ＥＯ）嵌段共聚物,并用ＦＴＩＲ,＾１Ｈ－ＮＭＲ,ＳＥＣ,ＷＡＸＤ和动态粘弹谱对共聚物进行了表征。结果表明所得聚合物为分子量可控,窄分布的两嵌段共聚物。     

变间隙法布里-珀罗干涉光谱仪光谱复原方法分析

变间隙法布里-珀罗（F-P）干涉成像光谱仪以体积小、高光通量、高空间分辨率和高光谱分辨率等众多优势特性,成为研究热点。由于其干涉条纹不是正弦条纹,因而无法直接用快速傅里叶变换获得精确光谱曲线。详细推导了变间隙法布里-珀罗（F-P）干涉仪多光束干涉原理和其光谱复原原理,给出干涉条纹与光谱曲线的数学关系;从理论上证明了光谱复原方法的可行性和必要条件,并给出理论误差。此外,还基于MATLAB进行了仿真和光谱成像系统实物实验,验证了理论分析的正确性。为F-P干涉成像光谱仪的工程化提供了理论依据,并对设计中的参数确定具有指导意义。     

固相萃取GC-MS/MS法测定海水中多环芳烃研究

建立了同时测定海水中10种多环芳烃的精确定量检测方法. 利用固相萃取GC-MS/MS法, 确定10种多环芳烃的色谱分离条件和质谱定性、定量离子. 通过比对不同固相萃取柱和萃取条件对多环芳烃的萃取效果发现C18为最佳固相萃取柱, 最佳洗脱溶剂为二氯甲烷. 同时, GC-MS/MS采用多反应监测模式(MRM)及内标法定量, 该方法的线性范围为1.0~200.0μg?L-1, 检出限为0.01~0.08ng?L-1, 加标回收率为83.0%~108.7%, 相对标准差小于6.5%. 表明该方法具有较好的准确度和精密度, 最后将其应用于象山港海水中多环芳烃的测定, 10种多环芳烃的检出率为100%.     

Enhanced field emission characteristics of thin-Au-coated nano-sheet carbon films

This paper reports that the nano-sheet carbon films (NSCFs) were fabricated on Si wafer chips with hydrogen--methane gas mixture by means of quartz-tube-type microwave plasma chemical vapour deposition (MWPCVD). In order to further improve the field emission (FE) characteristics, a 5-nm Au film was prepared on the samples by using electron beam evaporation. The FE properties were obviously improved due to depositing Au thin film on NSCFs. The FE current density at a macroscopic electric field, E, of 9~V/μ m was increased from 12.4~mA/cm² to 27.2~mA/cm² and the threshold field was decreased from 2.6~V/μ m to 2.0~V/μ m for Au-coated carbon films. A modified F-N model considering statistic effects of FE tip structures in the low E region and a space-charge-limited-current effect in the high E region were applied successfully to explain the FE data of the Au-coated NSCF.     

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes （LDs）. The roomtemperature （RT） cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing （FS） GaN substrate by metal organic chemical vapor deposition （MOCVD）. The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efticiency of multiple quantum well （MQW）, respectively.