Fast-switching SOI-LIGBT with compound dielectric buried layer and assistant-depletion trench

A lateral insulated gate bipolar transistor (LIGBT) based on silicon-on-insulator (SOI) structure is proposed and investigated. This device features a compound dielectric buried layer (CDBL) and an assistant-depletion trench (ADT). The CDBL is employed to introduce two high electric field peaks that optimize the electric field distributions and that, under the same breakdown voltage (BV) condition, allow the CDBL to acquire a drift region of shorter length and a smaller number of stored carriers. Reducing their numbers helps in fast-switching. Furthermore, the ADT contributes to the rapid extraction of the stored carriers from the drift region as well as the formation of an additional heat-flow channel. The simulation results show that the BV of the proposed LIGBT is increased by 113% compared with the conventional SOI LIGBT of the same length L_D. Contrastingly, the length of the drift region of the proposed device (11.2 μ) is about one third that of a traditional device (33 μ) with the same BV of 141 V. Therefore, the turn-off loss (E_OFF) of the CDBL SOI LIGBT is decreased by 88.7% compared with a conventional SOI LIGBT when the forward voltage drop (V_F) is 1.64 V. Moreover, the short-circuit failure time of the proposed device is 45% longer than that of the conventional SOI LIGBT. Therefor, the proposed CDBL SOI LIGBT exhibits a better V_F-E_OFF tradeoff and an improved short-circuit robustness.     

火焰原子吸收光谱法测定饮用水中铜和锶的研究

实验的主要目的是对火焰原子吸收光谱法测定饮用水中铜和锶的方法进行研究。其中对火焰原子吸收光谱法测定锶的两种方法均进行了研究。在选定的最佳仪器条件下,测定铜、锶(方法 1)和锶(方法 2)RSD分别为0.65%、2.67%、1.01%。饮用水中铜、锶(方法 1)和锶(方法2)的回收率分别为95.00%、95.00%、91.00%。实验表明,该法操作简单、测试快速、结果准确稳定。     

约束下线性混合模型参数估计的渐近解及其收敛性

在线性不等式约束下讨论了具有相同参数的两个线性混合模型的参数估计问题,给出了一种迭代算法,得到了这类模型中参数的最小二乘估计序列及其渐近解.在此基础上,利用多元多项式方程组解的个数定理和不动点定理,证明了此估计序列是依概率1收敛的.     

F离子注入新型Al0．25Ga0．75N／GaNHEMT器件耐压分析

为了缓解AlGaN／GaNhighelectronmobilitytransistors（HEMT）器件n型GaN缓冲层高的泄漏电流,本文提出了具有氟离子注入新型Al0．25Ga0．75N／GaNHEMT器件新结构．首先分析得出n型GaN缓冲层没有受主型陷阱时,器件输出特性为欧姆特性,这样就从理论和仿真方面解释了文献生长GaN缓冲层掺杂Fe,Mg等离子的原因．利用器件输出特性分别分析了栅边缘有和没有低掺杂漏极时,氟离子分别注入源区、栅极区域和漏区的情况,得出当氟离子注入源区时,形成的受主型陷阱能有效俘获源极发射的电子而减小GaN缓冲层的泄漏电流,击穿电压达到262v通过减小GaN缓冲层体泄漏电流,提高器件击穿电压,设计具有一定输出功率新型A1GaN／GaNHEMT提供了科学依据．     

Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas（2DEG） regions in AlGaN/GaN high electron mobility transistors（HEMTs） are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

Breakdown voltage analysis of Al_0.25Ga_0.75N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

In this paper,two-dimensional electron gas(2DEG) regions in AlGaN/GaN high electron mobility transistors(HEMTs) are realized by doping partial silicon into the AlGaN layer for the first time.A new electric field peak is introduced along the interface between the AlGaN and GaN buffer by the electric field modulation effect due to partial silicon positive charge.The high electric field near the gate for the complete silicon doping structure is effectively decreased,which makes the surface electric field uniform.The high electric field peak near the drain results from the potential difference between the surface and the depletion regions.Simulated breakdown curves that are the same as the test results are obtained for the first time by introducing an acceptor-like trap into the N-type GaN buffer.The proposed structure with partial silicon doping is better than the structure with complete silicon doping and conventional structures with the electric field plate near the drain.The breakdown voltage is improved from 296 V for the conventional structure to 400 V for the proposed one resulting from the uniform surface electric field.     

连续体结构拓扑优化的一种改进变密度法及其应用

针对连续体结构拓扑优化设计变密度方法SIMP和RAMP,因惩罚函数选取的不合理而导致拓扑结构形式不甚合理的问题,本文提出了一种新的惩罚函数,并基于此函数导出了相应的迭代设计公式,几个典型考题的数值结果,说明了方法的可行性和有效性.     

多晶纯钛在高应变率不同温度下的拉伸力学行为实验研究

利用MTS809和自行研制的旋转盘冲击拉伸试验机,对多晶纯钛进行了应变率为0.001s-1和300s-1、温度为298K至973K的拉伸试验和应变率为300 s-1不同温度下的冲击拉伸复元试验,得到了多晶纯钛的拉伸应力应变曲线和高应变率等温应力应变曲线。试验结果表明,多晶纯钛的拉伸力学行为具有应变率和温度相关性。采用修正的Johnson-Cook模型进行数值拟合,结果表明,该本构模型能较好地表征多晶纯钛在试验应变率和温度范围内的拉伸力学行为。     

复杂机构的控制与结构同步优化设计

本文研究了非线性机构控制与结构同步优化设计问题。提出了一种复杂系统敏度分析的数值求解方法,该方法首先通过滑模控制器将非线性动力学方程化简为一个线性微分方程;然后,利用Newmark积分法,获得系统对设计变量敏度的数值解;最后,以Stewart平台为例,介绍了该方法的应用过程。数值结果说明了方法的有效性。     

9-戊基咔唑-3,6-双-(炔苯基-4-甲酸乙酯)的合成与双光子特性研究

采用钯催化的碳碳偶合反应合成了9-戊基咔唑-3,6-双-(炔苯基-4-甲酸乙酯)(I).进一步研究了化合物I在四氢呋喃和40%四氢呋喃水溶液中的光物理性质,结果显示,化合物I在40%四氢呋喃水溶液中的紫外吸收峰位置与其四氢呋喃溶液相比没有发生明显移动,它在40%四氢呋喃水溶液中的单光子荧光发射峰出现在453 nm,较其在四氢呋喃溶液的发射有42 nm红移,其荧光量子效率为0.44.用波长为660 nm飞秒激光激发时,化合物I在40%四氢呋喃水溶液中的双光子荧光发射最大峰红移至489 nm,其双光子吸收截面值为251GM,比其在四氢呋喃溶液中的截面(151 GM)增强了60%.