两个三角不等式

定理１在任意△ＡＢＣ中，Ａ、Ｂ、Ｃ表示其三内角，则ｃｏｓ３Ａ＋ｃｏｓ３Ｂ＋ｃｏｓ３Ｃ≥３８．（等号当且仅当△ＡＢＣ为正三角形时成立）证明由三角恒等式ｃｏｓ３Ａ＋ｃｏｓ３Ｂ＋ｃｏｓ３Ｃ＝（２Ｒ＋ｒ）３－３ｓ２ｒ４Ｒ３－１（Ｒ、ｒ、ｓ为△ＡＢＣ的外接圆半...     

Characteristics of a 4-fold segmented clover detectore

Four high-purity germanium 4-fold segmented Clover detectors have been applied in the experiment of neutron-rich nucleus 21N. The performance of those four Clovers have been tested with radioactive sources and in-beam experiments, and the main results including energy resolution, peak-to-total ratios, the variation of the hit pattern distribution in different crystals of one Clover detector with the energy of γ ray, and absolute full energy peak detection effciency curve, were presented.     

Resonant Third-Order Optical Nonlinearities of Poly（methyl methacrylate） Films Containing J-Like Aggregates of a Thiadicarbocyanine Dye

The third-order optical nonlinearities and responses of poly（methyl methacrylate） （PMMA） coating films containing J-like aggregates of a thiadicarbocyanine dye, 3,3＇-diethyl-2,2＇-thiadicarbocyanine iodide （DTDC1）, are measured by degenerate four-wave mixing （DFWM） technique under resonant conditions. The temporal profiles of the DFWM signal of PMMA coating films containing J-like aggregates of DTDC1 are found to consist of three components： i.e., the coherent instantaneous nonlinear response （electronic response） and the two slow responses uqth decay time constants of about 0.8ps and about 7.0ps. The electronic component of the effective third-order nonlinear susceptibility, χc^（3）, of one of the present films is as high as about 2.1×10^-8 esu, and the figure of merit of third-order nonlinearity F （F=χ^（3）/α） is evaluated to be about 1.9 ×10^-13 esu cm at 850nm.     

铝合金杯形件等温挤压成形工艺

材质为2A14铝合金深孔杯形毛坯件，由于壁薄，材料热变形温度范围窄，合金流变困难，若采用常规锻造的反挤压成形方法，势必造成杯体内、外壁变形不均，温度下降过快，变形抗力大，成形难度较大。等温成形工艺是零件毛坯精化和优化的一个重要途径，但对设备和模具的要求较高，成本高。因此运用有限元数值模拟结合试验对铝合金杯形件挤压成形工艺进行可行性研究，以减少研究试验成本。     

Influence of Interface Charge on Electrical Properties of ZnO／Si Heterojunction

The capacitance-voltage and current-voltage properties of the samples before and after annealing are investigated at 300 K and 195K. It is found that the interface charge plays an important role for the heterojunction properties. After annealing, the samples exhibit typical junction properties. The heterojunction shows a built-in potential 0.62eV consistent with the theoretical result 0.67eV. However, the sample exhibits more complex behaviour before annealing. The experimental results can be explained by heterojunction theory when, introducing interface charge, which suggests that the annealing can reduce interface charge and can improve the junction properties of the samples.     

谈电话机的发展

电话机,是电话系统的终端设备．自从美国科学家贝尔和沃森在1875年6月2日发明了世界上第一部电话机后,电话,这一名词,才在1876年3月7日贝尔申请发明电话的专利中首次出现,而人类利用电话机实现的第一次通话是贝尔和沃森于1876年3月10日在他们研究电话的实验室中实现的．从此,它宣告了人类历史上第一部真正具有实用价值的电话机的诞生,这就是原始的电磁式电话机．它从此改变了人们传统的交往方式,使人类文明又进入了新的发展时期．     

Si中Nd离子热退火行为的深能级瞬态谱研究

本文采用高能离子注入技术将两种剂量的稀土元素钕(Nd)引入外延n-Si片中,并借助非相干光快速热退火(RTA)方法使注入层再结晶并电激活;利用深能级瞬态谱(DLTS)测量方法对Si中Nd离子的深能级行为进行了研究.结果发现:经几秒钟的RTA处理,Nd能在Si中被激活并形成深能级中心,测量到较宽的DLTS谱峰.Nd在n-Si中的深能级行为与Si衬底材料的浅能级杂质基本无关.在低于1285℃的RTA时,Nd形成的深能级中心均为施主型.深能级中心的位置随注入剂量和退火温度不同而有所变化;高温退火后,Nd在硅中有一个能级位置为Ec-(0.32±0.04)eV稳定的施主型深中心,对它的成因进行了讨论.     

旋转对流下铜在微沟道中的电沉积

将刻有微沟道的芯片固定在旋转圆盘电极上,在旋转对流条件下于微沟道中电沉积铜.微沟道深度为1μm,宽度分别为0.35μm,0.50μm,0.70μm.研究了芯片的旋转、电流密度以及Cu2+浓度等对微沟道中铜沉积的影响.实验表明,在旋转对流传质下,铜在微沟道中的沉积速率比静止芯片时的约快2～3倍.较低的Cu2+浓度和适中的沉积电流密度更有利于超等厚沉积的形成.     

CCl3OO· 槲皮素、芦丁、EGCG的分子反应机理

采用脉冲辐解时间分辨吸收光谱技术,研究了在近中性条件下槲皮素、芦丁、没食子儿茶素没食子酸酯(EGCG) 3种天然抗氧化剂清除CCl₃OO^· 自由基的反应机理,提出 CCl₃OO^·自由基与芦丁、EGCG反应均为单电子转移反应,而与槲皮素的反应可能存在单电子转移和加成两种机理,并测定了它们的反应速率常数,证明槲皮素、芦丁清除CCl₃OO^·自由基的能力比EGCG强得多.     

单相Ce0.5Zr0.5O2立方固溶体的高压高温合成

以化学沉淀法制备的CeO