ZnO薄膜的制备和发光特性的研究

用射频磁控溅射的方法在石英衬底上沉积了氧化锌薄膜，在室温下测量了样品的XRD曲线、吸收光谱以及光致发光光谱。探讨了气氛中氧气与氩气比对制备薄膜的影响，从XRD谱中可以看出，样品具有较好的结晶状态。另外，样品在紫外有较强的吸收，而其光致发光也是较强的紫外发射，这表明带间跃迁占了主导地位，以上结果说明：用溅射方法制备的ZnO薄膜结晶质量较好，富锌状态有所改善。     

用卢瑟福背散射/沟道技术研究ZnO/Zn0.9 Mg0.1 O/ZnO异质结的弹性应变

利用卢瑟福背散射/沟道技术对射频等离子体辅助分子束外延法生长在蓝宝石衬底上的ZnO/Zn0.9Mg0.1O/ZnO异质结进行了组分分析,并得到了异质结弹性应变随深度的变化,应变由界面向表面逐渐释放,并由负变正,且在ZnO与Zn0.9Mg0.1O界面处轻微增大.负的应变是由于ZnO与衬底的晶格失配和热失配,而逐渐变为正值是Zn0.9Mg0.1O与ZnO的晶格常数差异及弹性应变的逐渐释放所致.     

Charge Density Wave States in 2H-MoTe_2 Revealed by Scanning Tunneling Microscopy

2H-and 1T′-phase monolayer MoTe_2 films on highly oriented pyrolytic graphite are studied using scanning tunneling microscopy and spectroscopy(STM/STS).The phase transition of MoTe_2 can be controlled by a postgrowth annealing process,and the intermediate state during the phase transition is directly observed by STM.For 2H-MoTe2,inversion domain boundaries are presented as bright lines at high sample bias,but as dark lines at lower sample bias.The dI/dV mappings reveal the distinct distributions of electronic states between domain boundaries and interiors of domains.It sihould be noted that a 2×2 periodic structure is clearlfy discernable inside the domains,where the STS measurement shows a small dip of size～150 meV at the vicinity of the Fermi level,indicating that the 2×2 periodic structure may be an incommensurate charge density wave.Moreover,a4×4 periodic structure appears in 2H-MoTe_2 grown at a higher substrate temperature.     

Interstitial Doping of SnO2 Film with Li for Indium-Free Transparent Conductor

<正>SnO₂ films exhibit significant potential as cost-effective and high electron mobility substitutes for In₂O₃ films.In this study,Li is incorporated into the interstitial site of the SnO₂ lattice resulting in an exceptionally low resistivity of 2.028×10^-3 Ω·cm along with a high carrier concentration of 1.398×10²⁰cm^-3 and carrier mobility of 22.02 cm²/V·s.