ZnO薄膜的制备和发光特性的研究

用射频磁控溅射的方法在石英衬底上沉积了氧化锌薄膜，在室温下测量了样品的XRD曲线、吸收光谱以及光致发光光谱。探讨了气氛中氧气与氩气比对制备薄膜的影响，从XRD谱中可以看出，样品具有较好的结晶状态。另外，样品在紫外有较强的吸收，而其光致发光也是较强的紫外发射，这表明带间跃迁占了主导地位，以上结果说明：用溅射方法制备的ZnO薄膜结晶质量较好，富锌状态有所改善。

Preparation and Photoluminescent Properties of ZnO Thin Film

ZnO thin film is a promising material for short-wave laser and LBD etc, due to its wide band gap (3.37eV) and high exciton binding energy (60meV) at room temperature. But its photoluminescent properties received little attention in the past years, because there was unavoidably more or less defection in this material produced by traditional methods. To solve this problem, its preparation techniques need to be further improved. In recent years, some new methods were introduced to produce ZnO thin film such as MOCVD, MBE and so on. ZnO becomes hotpoint in all kinds of researches, especially in designing optoelectronic devices. In our work, the ZnO thin films were deposited on quartz substrates by radio frequency magnetic sputtering. We reported the measurements of XRD patterns, absorption spectra and photoluminescent spectra of our samples at room temperature. We also discussed the effect caused by the change of the ratio of oxygen to argon on the qualities of thin films. The ratio of 20:70 was found optimal. From XRD patterns, we can see our samples have good crystalline. On the other hand, ZnO thin film showed strong absorption in the UV region. The photoluminescence was correspondingly strong UV emission peaked at 392nm. It is obvious that near band emission is dominant in various transitions. High structural perfection of our sample was shown in these figures. The state of abundant Zn in ZnO thin film was greatly improved.