Microstructure and lateral conductivity control of hydrogenated nanocrystalline silicon oxide and its application in a-Si:H/a-SiGe:H tandem solar cells

Phosphorous-doped hydrogenated nanocrystalline silicon oxide(n-nc-SiO_x:H) films are prepared via radio frequency plasma enhanced chemical vapor deposition(RF-PECVD). Increasing deposition power during n-nc-SiO_x:H film growth process can enhance the formation of nanocrystalline and obtain a uniform microstructure of n-nc-SiO_x:H film. In addition,in 20 s interval before increasing the deposition power, high density small grains are formed in amorphous SiO_x matrix with higher crystalline volume fraction(I_c) and have a lower lateral conductivity. This uniform microstructure indicates that the higher Ic can leads to better vertical conductivity, lower refractive index, wider optical band-gap. It improves the back reflection in a-Si:H/a-SiGe:H tandem solar cells acting as an n-nc-SiO_x:H back reflector prepared by the gradient power during deposition. Compared with the sample with SiO_x back reflector, with a constant power used in deposition process,the sample with gradient power SiO_x back reflector can enhance the total short-circuit current density(Jsc) and the initial efficiency of a-Si:H/a-SiGe:H tandem solar cells by 8.3% and 15.5%, respectively.     

Studies on RFQ accelerators and its applications

Development activities of Radio Frequency Quadrupole （RFQ） accelerators in China are presented. A 1 MeV O＋ RFQ and a 3.5 MeV ADS proton RFQ have been constructed. A novel separated function RFQ is under beam test, a 2 MeV D＋ RFQ is under construction and a CSNS RFQ is going to be constructed. The RFQ dynamics and the simultaneous dual beam acceleration with positive and negative ions were investigated and related codes were developed. The applications of RFQ will be further promoted in China.     

Power test of the separated function RFQ accelerator

The progress of the Separated Function RFQ (SFRFQ) accelerator, which can raise the field gradient of acceleration while maintaining the transverse focusing power sufficient for high current beam, is presented. In order to demonstrate the feasibilities of the novel accelerator, a prototype cavity was designed and constructed. Correspondingly, a code SFRFQCODEV1.0 was developed specially for cavity design and beam dynamics simulation. The prototype cavity will be verified as a post-accelerator for ISR RFQ-1000 (Integral Split Ring RFQ) and     

Ferroelectric Properties of Bi3.25La0.75Ti3O12 Thin Films Crystallized inDifferent N2/O2 Ambients

Bi3.25La0.75 Ti3O12 （BLT） ferroelectric thin films are deposited by sol-gel method and annealed for crystallizaion in total l eccm N2/02 mixed gas with various ratio at 750℃ for 30rain. The effect of crystallization ambient on the structural and ferroelectric properties of the BLT films is studied. The growth direction and grain size of BLT film are revealed to affect ferroeleetric properties. Alter the BLT film is annealed in 20%O2, the largest P~ value is obtained, which is ascribed to an increase of random orientation and large grain size. The fatigue property is improved with the concentration of oxygen in the ambient increasing, which is ascribed to annealing in the ambient with high concentrated oxygen adequately decreasing the defects related to lack of oxygen.     

Impurity Activation in MBE-Grown As-Doped HgCdTe by Modulated Photoluminescence Spectra

Modulated photoluminescence spectra have been performed to investigate the impurity activation in MBE-grown As-doped Hg1-xCdxTe （x ≈ 0.3）. The results show that the doped As mainly acting as donors in the as-grown samples can be fully activated as AsTe by two-stage anneals of 285℃/16 h ＋ 240℃/48h, of which the ionization energy has been determined to be about lO.5 meV, slightly smaller than that of intrinsic VHg （about 14.5 meV）. However, the higher activation temperature （e.g. 400℃） at the first-stage can produce large numbers of excessive VHg and seriously deteriorate the quality of epilayers. This couM give a brief guideline for preparing extrinsic p-type HgCdTe materials or devices.     

CN红带A 2Пi-X 2Σ+(6, 1)和(7, 2)带振转光谱研究

通过微量CH3CN(36 Pa)与He(660 Pa)混合气体交流Penning辉光放电获得CN自由基分子, 采用光外差-磁旋转-浓度调制光谱技术, 在可见光波段16 850～17 480 cm-1进行了转动分辨光谱测量, 分别标识了CN分子红带A 2Пi-X 2Σ+(6, 1)和(7, 2)138条和118条的转动光谱(其余光谱为C2自由基及CN红带(8, 3)带光谱). 理论拟合分子常数时考虑电子态间的微扰作用, 采用有效哈密顿量矩阵对角化获得了A 2Пi(ν=6, 7)态更精确的分子常数及电子态A 2Пi(ν=7)与 X 2Σ+ (ν=11)之间的微扰常数ξ, η, 总体拟合方差均小于实验误差0.007 cm-1, 表明拟合结果是非常精确的.     

γ-α相变中不同晶界特征下铁素体生长形貌的相场模拟

利用多相场模型模拟了奥氏体(γ)-铁素体(α)相变过程中不同晶界特征下铁素体晶粒的形貌与生长动力学.模型中通过能量梯度系数和耦合项系数的协同变化定量表达晶界能与晶界迁移率的各向异性,同时固定相场界面宽度来保证计算精度.模拟结果显示:随着原奥氏体晶界能与铁素体-奥氏体晶界能比值σ_(γ,γ)/σ_(α,γ)的增加,三叉相界面处的平衡角β减小,铁素体晶粒沿原奥氏体晶界与垂直于奥氏体晶界方向的生长速率差变大.铁素体与奥氏体晶粒间的晶粒取向越接近,铁素体生长越缓慢.模拟结果可描述铁素体晶粒生长形貌的多样性,与实验结果符合.     

一体化核磁共振谱仪数据交换的实现机制

核磁共振（NMR）随着其应用领域的拓展和深入,核磁共振谱仪技术得到了不断的发展和完善^[1,2]_. 针对以往谱仪存在的一些问题,本文提出了一种一体化核磁共振谱仪数据交换的实现机制,同时提出了基于ARM（Advanced RISC Machines,先进精简指令计算机）微处理器的嵌入式操作系统软件设计方案,并给出了谱仪各功能模块的实际性能测试结果,对实验结果进行了总结和讨论.      

不同响应波长的HgCdTe光导器件噪声分析

研究了不同响应波长的HgCdTe器件在不同背景辐射条件下的噪声变化.随着背景辐射的增加,甚长波器件的噪声减小,而中波器件相反.噪声频谱测量表明,产生-复合噪声分量和1/f噪声分量是器件的主要噪声来源,并且这两个分量随背景的变化趋势相同.非平衡载流子和器件有效寿命的理论分析,表明器件噪声随背景辐射的变化存在一个极大值,而中波和甚长波器件处在不同的作用区域内,接受到的背景辐射对载流子浓度和器件有效寿命的影响不同,从而噪声变化表现不同.在此基础上,提出了"临界背景通量密度"的概念.     

基于标准温度法的脉冲TIG焊电弧温度场计算与分析

脉冲TIG焊由于其优越的特性而广泛应用于工业中,准确测量电弧温度对分析焊接过程有重要意义。论文基于光谱学理论计算了氩元素的粒子数密度与温度之间的关系曲线,计算了794.8 nm氩原子谱线的发射系数与温度之间的关系曲线,利用高速摄影获得了794.8 nm特征谱的电弧图像,根据Abel变换和标准温度法计算了脉冲TIG焊峰值时刻和基值时刻的电弧温度场分布。