扭曲二维结构钝化的钙钛矿太阳能电池

有机-无机钙钛矿材料是一种新兴的可溶液加工的薄膜太阳能电池材料.通过向钙钛矿中引入低维结构能够显著提高其材料稳定性和器件稳定性.首先,探究了一种双阳离子2, 2’-联咪唑(BIM)形成的铅基二维钙钛矿;然后,通过单晶衍射手段发现了一种新型的扭曲二维结构;最后,通过一步旋涂方法将这种扭曲二维结构引入到钙钛矿薄膜中,所得到的太阳能电池器件效率达14%,并且具有较好的稳定性.本文提供了一种新的钙钛矿薄膜的钝化体系,并且直接运用于太阳能电池器件的制备,为提高钙钛矿太阳能电池的稳定性提供了新的发展思路.     

Cross section of the impact single ionization of B2＋ by H＋

The ionization process of B2+ by H+ impact is studied using the continuum-distorted-wave eikonal-initial-state (CDW-EIS) method and the modified free electron peak approximation (M-FEPA), respectively. Total, single-, and double- differential cross sections from 1s and 2s orbitals are presented for the energy range from 10 keV/u to 10 MeV/u. Comparison between the results from the two methods demonstrates that the total and single-differential cross sections for the high-energy incident projectile case can be well evaluated using the simple M-FEPA model. Moreover, the M-FEPA model reproduces the essential features of the binary-encounter (BE) bump in the double-differential cross sections. Thus, the BE ionization mechanism is discussed in detail by adopting the M-FEPA model. In particular, the double- and single-differential cross sections from the 2s orbital show a high-energy hip, which is different from those from the 1s orbital. Based on Ref. [1], the Compton profiles of B2+ for 1s and 2s orbitals are given, and the hips in DDCS and SDCS from the 2s orbital are explained.     

制备方法对Al2O3掺杂Pt/WO3-ZrO2催化剂上正庚烷异构化反应的影响

采用恒pH法和非恒pH法制备了Al₂O₃掺杂的Pt/WO₃/ZrO₂催化剂,并用N₂吸附-脱附、X射线衍射、紫外-可见漫反射、CO化学吸附、X射线光电子能谱、²⁷Al魔角旋转核磁共振和吡啶吸附红外等技术对催化剂进行了表征.结果表明,相比于非恒pH法制备的催化剂,恒pH法制备的催化剂具有较高的比表面积和Pt分散度,在H₂气氛中产生更多的B酸位,从而表现出更高的催化正庚烷临氢异构化反应活性; 在200℃和质量空速0.9h^-1的反应条件下,正庚烷转化率达70.0%,明显高于非恒pH法制备的催化剂(43.5%).     

掺镱双包层光纤放大器分布泵浦方式下的优化算法

 利用平均反转率迭代算法计算掺镱双包层光纤放大器分布泵浦方式下的稳态速率方程组，并采用遗传算法对分布泵浦功率的大小和每段光纤长度同时进行优化。评估函数中引入了每段光纤中最高温度的标准方差，以确保每段光纤中的最高工作温度是相同的。通过优化，7段泵浦的最高温度和标准方差分别为126.34 ℃和1.95 ℃ ，8段泵浦条件下的最高温度和标准方差分别为119.76 ℃和2.12 ℃。而未经优化的7段泵浦的最高温度和标准方差分别为147.12 ℃和21.37 ℃，8段泵浦条件下的最高温度和标准方差分别为139.95 ℃和20.83 ℃。计算结果表明：泵浦方式的优化降低了最高温度和标准方差，实现了光纤中温度分布的均匀性，并且通过增加泵浦段数可以进一步降低最高温度和平坦温度分布。     

高功率激光反射镜的几个关键技术

 分析了制作高功率连续激光反射镜材料的热性能、缺陷及其加工工艺, 提出了制作高功率激光反射镜应考虑的几个关键问题: 反射镜材料的综合热性能比值S, 材料的微观结构、缺陷的大小和晶向的选择, 以及加工工艺的设计。并介绍了实验结果。     

Dynamic PMD compensation in 40-Gb/s optical communication system

A 40-Gb/s optical time division multiplexing (OTDM) return-to-zero (RZ) transmission experiments including a dynamic polarization mode dispersion (PMD) compensation was reported. The dynamic PMD compensator is made up of two-stage four degrees of freedom (DOF). The first stage adopts polarization controller and fixed time-delayed line. The second stage is variable differential group delay (DGD) element. The PMD monitoring technique is based on degree of polarization (DOP) as error signal. A novel practical adaptive optimization algorithm was introduced in dynamic adaptive PMD compensation. The experimental results show that the performance of the PMD compensator is excellent for 40-Gb/s RZ transmission systems with the large DGD. With this compensator, a significant improvement of system performance can be achieved in the eye pattern of a received signal. The first-order compensating ability of the compensator is greater than 30 ps. The second-order compensating ability is greater than 200 ps2. The first     

一类非线性m-点边值问题正解的存在性

设α∈C[0,1],b∈C([0,1],(-∞,0)).设φ(t)为线性边值问题 u″+a(t)u′+b(t)u=0, u′(0)=0,u(1)=1的唯一正解.本文研究非线性二阶常微分方程m-点边值问题 u″+a(t)u′+b(t)u+h(t)f(u)=0, u′(0)=0,u(1)-sum from i=1 to(m-2)((a_i)u(ξ_i))=0正解的存在性.其中ξ_i∈(0,1),a_i∈(0,∞)为满足∑_(i=1)~(m-2)a_iφ_1(ξ_i)<1的常数,i∈{1,…,m-2}.通过运用锥上的不动点定理,在f超线性增长或次线性增长的前提下证明了正解的存在性结果.     

低串扰的多波长光纤光栅色散补偿器

分析了光纤光栅色散补偿系统中的串扰，并比较了几种常用的多波长光纤光栅色散补偿器的串扰特性，结合串联的窄带光纤光栅和取样光纤光栅的优点，提出一种抑制光纤光栅色散补偿系统串扰的方法.它通过在邻近信道间引入随机时延差，既能改善取样光纤光栅的线性串扰特性，又能抑制交叉相位调制效应和四波混频等非线性串扰.使用该方法可以得到具有低串扰的多波长光纤光栅色散补偿器.     

Structure Characterization of HSQ Films for Low Dielectrics Using D5 as Sacrificial Porous Materials

Low-density materials, commercially available hydrogensilsesquioxane （HSQ） offer a low dielectric constant. HSQ films can be obtained by spin on deposition （SOD）. In this work, low-dielectric-constant HSQ films are prepared by using D5 （decamethylcyclopentasiloxane） as sacrificiaJ porous materials. The dielectric constant of silica films significantly changes from 3.0 to 2.4. We report the structural aspects of the films in relation to their composition after annealed at 300℃, 400℃, and 500℃ for 1.5h in nitrogen ambient and annealed at 400℃ for 1.5h in vacuum. Si-OH appears after annealed at 400℃ for 1.5h in vacuum. The results indicate that the proper condition is in nitrogen ambient. Intensity of the Sill peak increases with the increasing temperature. Fourier transform infrared spectroscopy is used to identify the network structure and cage structure of Si-O-Si bonds and other possible bonds. Dielectric constant k is significantly lowered by annealing at 350℃ for 1.5h in nitrogen ambient. The I-V and C-V measurements are used to determine the dielectric constant, the electric resistivity and the breakdown electric field.