单离子束技术概述

 对单离子束的发展和应用作了介绍。结合我国首台单离子束装置CAS-LIBB，综合讨论了准直器限流型和静电透镜聚焦型两种典型单离子束的技术结构。限流型结构简单但定位精度有限，聚焦型条件苛刻但可获得亚微米束，是单离子束发展的趋势。评估了前探测、全前置探测和后探测3种单离子束探测方式及其特点，研究了这3种探测方式对辐照离子的计数精度和单离子束品质产生的影响。对CAS-LIBB装置研制了光导型全前置探测器以提高计数精度和束流品质。最后设计了快速荧光在线检测技术方案。     

SiO2分子的基态(X1A1)结构与分析势能函数

应用群论及原子分子反应静力学方法推导了SiO2分子的电子态及其离解极限,采用B3P86方法,在6-311G**水平上,优化出SiO2基态分子稳定构型为单重态的C2V构型,其平衡核间距Re=RSi-O=0.1587 nm,∠OSiO=111.2°,能量为-440.4392 a.u..同时计算出基态的简正振动频率:对称伸缩振动频率v(B2)=945.4cm-1,弯曲振动频率v(A1)=273.5 cm-1和反对称伸缩振动频率v(A1)=1362.9cm-1.在此基础上,使用多体项展式理论方法,导出了基态SiO2分子的全空间解析势能函数,该势能函数准确再现了SiO2(C2V)平衡结构.     

Chemical Oxidation of La2CuO4 Epitaxial Thin Films Grown by Pulsed Laser Deposition

Chemical oxidation is used to induce superconductivity in La2CuO4 expitaxial thin films fabricated by pulsed laser deposition technique. Details about the influence of oxidation time on structural, surface morphology, Raman spectra, and electrical properties have been investigated. The results convince that successful uptake of oxygen occurs in the oxidized films, and the content of the inserted oxygen increases with increasing oxidation interval. The possible mechanism for the excess oxygen insertion into the film is also discussed.     

A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor

With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.     

Measuring Grüneisen Parameter of Lead by High Pressure-Jump Method

Using the technology of pressure jump, variations of temperature associated with pressure from 2.4 GPa to 4.6 GPa are measured for lead. The Grfuneisen parameter is calculated from the thermodynamic relation γ =（Ks/T）（aT/aP）s, in which substitution of △T/△P for aT/aP at median pressure is strictly justified. The correction of temperature change is carried out by analysing the experimental data, which makes the process more approaching to an adiabatic condition. The calculated values of △T/ △ P and γ gradually decrease with the increasing pressure. The decrease trend is consistent with the previous work. The γ values in the range of 2-3 GPa are averagely higher than the results of Ramakrishnan et al., indicating the effect of temperature correction. The improved method is promising for measurements of Grfineisen parameter to higher pressure range.     

基于氟代苯乙胺有机阳离子的准二维钙钛矿发光二极管EI北大核心CSCD

近年来,钙钛矿发光二极管(PeLEDs)发展非常迅速,其性能得到了大幅提升,而构筑具有量子阱结构的准二维钙钛矿是开发高性能PeLEDs的有效方法之一。大尺寸有机阳离子是构成准二维钙钛矿的关键组分,对调节准二维钙钛矿的薄膜结构和光电性质具有重要作用。本文通过在铯铅卤化物(CsPb X3)钙钛矿中引入两种单氟取代的溴化苯乙胺(o-FPEABr(邻位取代)和p-FPEABr(对位取代)),采用无反溶剂的一步法制备了准二维钙钛矿薄膜和发光器件,研究了它们对准二维钙钛矿成相分布和器件性能的影响。研究发现,pFPEABr使准二维钙钛矿形成了大量的低维相,特别是具有强激子-声子耦合的二维相,而高维相含量较少。相反地,o-FPEABr能够有效地抑制低维相,并促进高维相的形成,有利于降低非辐射复合和提高辐射复合。形成能计算结果显示,基于p-FPEABr的低维相比基于o-FPEABr的低维相具有更好的热力学稳定性,导致了准二维钙钛矿中成相分布的差异,表明改变氟原子的取代位置能够调控准二维钙钛矿的结晶动力学过程,进而影响器件的发光性能。基于o-FPEABr,我们制备出高效的绿光和蓝光PeLEDs。其中绿光器件的最大外量子效率(EQE)达到了10.27%,发光峰位于521 nm;而蓝光器件的最大EQE也达到了8.88%,发光峰位于488 nm。     

N_5O_3-TRPO混合萃取剂从碱性氰化液中萃金

研究 N5O3- TRPO混合萃取剂从碱性氰化液中萃取金 ,考察了平衡时间、水相初始 PH值、水相离子强度、金浓度、N5 0 3浓度、磷类添加剂的种类及其浓度、稀释剂、温度、相比等因素对金萃取率的影响 ,绘制了萃取等温线 ,测定了金的饱和容量 ,考察了所选定的萃取体系对银 ( )、铁 ( )、铜 ( )、镍 ( )、锌 ( )的萃取性能 ,计算出了金与这些杂质元素的分离系数。研究了负载有机相中金的反萃。结果表明 N5O3- TRPO ROH正十二烷体系对 Au( CN) 2 具有较高的萃取率和选择性 ,可应用于碱性氰化液中金的萃取分离。     

氢离子轰击对TiC膜结构及界面影响的研究

本文研究荷能氢离子轰击对TiC薄膜的结构及其界面的影响。氢离子源为5A的脉冲离子注入器,能量25keV,脉冲宽度20ms。样品经轰击后发现。与受相同辐照的45~#钢样品相比,TiC薄膜表面无明显的损伤;TiC薄膜内的氢含量较高;薄膜的织构消除;TiC薄膜与基体间的结合力有明显提高。     

局部凸空间中ic -锥-类凸集值优化问题的超有效性

该文研究局部凸空间中受集值约束的集值优化问题的超有效解. 证明了ic -锥-类凸集值映射的一个有用性质, 并以此性质为主要工具, 得到了ic -锥-类凸集值向量优化问题超有效解的最优性条件和鞍点定理.     

吸收光谱光路的设计与误差

固体、液体和气体物质的吸收光谱是大学普物、光学专业的一个基本实验．如何在普通的设备和实验条件下，较为准确地测量吸收系数？本文从朗伯定律出发，介绍一种“对数测量法”光路．并对实验中出现的“负吸收系数”等误差作了分析．文中还介绍了消除材料样品对探测光的反射误差的固体、液体样品架．