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61.
采用量子统计系综理论,研究了基态NO分子宏观气体摩尔熵、摩尔内能、摩尔热容等热力学性质.首先应用课题组前期建立的变分代数法(variational algebraic method, VAM)计算获得了基态NO分子的完全振动能级,得到的VAM振动能级作为振动部分,结合欧拉-麦克劳林渐进展开公式的转动贡献,应用于经典的热力学与统计物理公式中,从而计算得到了1000-5000 K温度范围内NO宏观气体的摩尔内能、摩尔熵和摩尔热容.将不同方法计算得到的摩尔热容结果分别与实验值进行比较,结果表明基于VAM完全振动能级获得的结果优于其他方法获得的理论结果.振动部分采用谐振子模型对无限能级求和计算热力学性质的方法有一定的局限性,应当使用有限的完全振动能级进行统计求和. 相似文献
62.
Nonlinear Dynamics - Oblique collisions are more likely to happen in the realistic translational joint with clearance, compared to the full front impacts. It can be a quite demanding task to... 相似文献
63.
64.
Radiophysics and Quantum Electronics - Wind-related weather hazards remain difficult to recognize targets for weather radars. Methods that use estimates of the width of the reflected-signal... 相似文献
65.
Journal of Analytical Chemistry - A review of works in developing optical multisensor systems, a new class of specialized spectroscopic analyzers, is presented. The development and use of such... 相似文献
66.
67.
S.V. Ivanov M.Yu. Chernov V.A. Solovev P.N. Brunkov D.D. Firsov O.S. Komkov 《Progress in Crystal Growth and Characterization of Materials》2019,65(1):20-35
High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ~8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic InxAl1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded InxAl1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As4/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?107 cm?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform. 相似文献
68.
Acta Mathematica Sinica, English Series - We are interested in the existence and asymptotic behavior for the least energy solutions of the following fractional eigenvalue problem $$\left({\rm{P}}... 相似文献
69.
Russian Physics Journal - The article describes the collocation method for the numerical solution of mathematical physics boundary value problems. By arranging the collocation nodes in a special... 相似文献
70.
在本工作中,我们成功制备了层状过渡金属磷族化合物BaMnBi2单晶样品,并研究了该化合物的磁学性质和电学输运性质.准二维化合物BaMnBi2具有四方晶体结构,主要包含有两个Bi四方格子层和一个共边的MnBi4四面体层.磁化率显示BaMnBi2在TN =288 K以下发生反铁磁相变,并表现出很强的磁各向异性.在反铁磁相变温度TN 以上,磁化率随温度呈线性关系,暗示体系在顺磁态具有很强的反铁磁关联.电阻率随温度变化曲线和在磁场下电阻率随角度的变化曲线都表明BaMnBi2具有准二维的电子结构.磁场导致的金属-绝缘体转变和低温下大的非饱和线性磁阻,与Bi四方格子层存在狄拉克费米子是一致的. 相似文献