Level structures in the 114 In nucleus

High-spin states in ¹¹⁴In were populated using the reaction ¹¹⁰Pd(⁷Li, 3n)¹¹⁴In at a beam energy of 26MeV. The level scheme of ¹¹⁴In consisting of six bands is established up to excitation energy ～ 5MeV and spin ～ 17 ? with the addition of 58 new transitions and their configurations are discussed. The intense positive-parity dipole cascade may be interpreted as shears band based on $ \pi$ [(g _9/2)^-1] ? $ \nu$ [(g _7/2/d _5/2)(h _11/2)²] configuration. The $ \Delta$ I = 2 bands based on proton excitation have been observed in ¹¹⁴In for the first time.     

A wire microcalorimetric study of catalytic ignition of methane–air mixtures over palladium oxide

Catalytic ignition and heat release of methane oxidation over a Pd wire covered with a 1–2 μm PdO surface layer were investigated by wire microcalorimetry over the temperature range of 600–770 K and pressure range of 0.5–4 atm. Ignition temperatures and heat release rates for different methane concentrations (1–4 vol.% in dry air) were determined, showing that the ignition temperatures decrease with increasing the methane concentration and increasing ambient pressure. At total pressure of 1 atm and 2% methane concentration, the global activation energy for the catalytic reaction is 21.5 ± 0.9 kcal/mol and 14.3 ± 0.2 kcal/mol in the temperature ranges of 600–670 K and 670–770 K, respectively. The reaction order for methane is 0.9 ± 0.1 over the temperature range of 630–770 K.     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

First-principles investigation of the electronic structure and magnetism of Heusler alloys CoMnSb and Co2MnSb

The spin-polarized electronic band structures, density of states (DOS), and magnetic properties of Co-Mn-based Heusler alloys CoMnSb and Co₂MnSb have been studied by first-principles method. The calculations were performed by using the full-potential linearized augmented plane wave (FP-LAPW) within the spin-polarized density functional theory and generalized gradient approximation (GGA). Calculated electronic band structures and the density of states are discussed in terms of the contribution of Co 3d⁷4s², Mn 3d⁵4s², and Sb 5s²5p³ partial density of states and the spin magnetic moments were also calculated. The results reveal that both CoMnSb and Co₂MnSb have stable ferromagnetic ground state. They are ideal half-metallic (HM) ferromagnet at their equilibrium lattice constants. The calculated total spin magnetic moments are 3μ_B for CoMnSb and 6μ_B for Co₂MnSb per unit cell, which agree with the Slater-Pauling rule quite well.     

Synthesis and luminescent properties of hexagonal BaZnSiO4:Eu2+ phosphor

A green-emitting phosphor of hexagonal BaZnSiO₄:Eu²⁺ was prepared by a combustion-assisted synthesis method and an efficient green emission from ultraviolet to visible light was observed. The luminescence and crystallinity were investigated by using luminescence spectrometry and X-ray diffractometry. In the hexagonal structure of BaZnSiO₄:Eu²⁺ phosphor, Eu²⁺ ions occupy three different lattice sites by substitution for Ba²⁺ ions. Eu²⁺ ions on Ba (1) and Ba (2) sites gave emissions at about 505 nm while Eu²⁺ ions on Ba (3) sites showed an emission band at 403 nm. The excitation spectrum is a broad band extending from 260 to 465 nm, which matches the emission of ultraviolet light-emitting diodes. The critical quenching concentration of Eu²⁺ in BaZnSiO₄:Eu²⁺ phosphor is about 0.05 mol. The value of the critical transfer distance is calculated as 10.97 Å. The corresponding concentration quenching mechanism is verified to be the electric multipole–multipole interaction. The CIE coordinates of the optimized sample $\mathrm{Ba}_{0.95}\mathrm{ZnSiO}_{4}{:}\mathrm{Eu}_{0.05}^{2+}$ were calculated as (x,y)=(0.172,0.463).     

Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films

Phase-change behavior in Si/Sb₈₀Te₂₀ nanocomposite multilayer films were investigated by utilizing in situ resistance measurements. It was found that the crystallization temperature increased firstly with increasing Si layer thickness within the multilayer films, and then remained almost unchanged at 170°C. The multilayer films have the merits of both good thermal stability and fast phase-change speed. An increase in crystallization temperature by around 95°C was observed for the multilayer films when the Sb₈₀Te₂₀ layer thickness was reduced to 3 nm. Cross-sectional transmission electron microscopy (TEM) observations revealed that Si/Sb₈₀Te₂₀ nanocomposite multilayer films had layered structures with clear interfaces. The reversible phase change between set and reset states was verified in phase-change random access memory (PCRAM) cell based on [Si (1 nm)/Sb₈₀Te₂₀ (5 nm)]₁₇ multilayer film.     

一批金元时期古玻璃的EDXRF探针无损分析

利用EDXRF探针无损分析技术,分析了河南禹县阳翟遗址出土的一批金元时期的玻璃样品,以研究这批古玻璃的工艺技术特点.分析显示,所有蓝色玻璃样品的呈色剂均为CuO,而非CoO.从化学组成来看,这批古玻璃的种类较为复杂,主要包括钾钙玻璃、钠钙玻璃和铅钾钙玻璃等.     

太湖典型湖区水体溶解有机质的光谱学特征

应用荧光光谱、紫外光谱及多种紫外参数等光谱学手段对太湖水体溶解有机质(DOM)进行分析测定,探讨太湖典型湖区水体中DOM的来源及其影响因素。结果表明:不同湖区水体DOM组成特性呈现出一定的区域特征,位于入湖河流的T1点和T2点所代表的竺山湾湖区,结构复杂的大分子物质和腐殖质类物质含量较多,这些区域受多重来源包括生物来源、陆源及生产生活污水的影响较大;以T3为代表的梅梁湾湖区、T4为代表的贡湖湾湖区和T5所处的湖心区其DOM复杂化程度相对较低;而T6点代表的东太湖湖区,因受外界环境的影响较小,以结构简单的类蛋白物质含量居多。     

THz波在金属镀层空芯波导中传输的理论和实验研究

本文基于微扰法求得不同金属镀层空心圆波导中各模式的损耗系数,对金属镀层空芯波导中THz波传输损耗随金属材料、波导结构等参数的变化关系进行了数值模拟.根据数值分析结果,优化设计并拉制了内径为1.1 mm的镀银空芯波导,实验测得当THz波的频率为2.5 THz时,传输损耗为8.6 dB/m,实现了THz波短距离的有效传输. 关键词： 太赫兹波 金属空芯波导 传输损耗     

Fe离子注入ZnO生成超顺磁纳米颗粒

过渡族元素掺杂ZnO生成稀磁半导体, 成为近期国际材料科学研究的热点. 在本文中, 研究Fe离子注入ZnO单晶的结构和磁性变化, 目标是建立磁性和结构的对应关系, 澄清铁磁性的来源. 采用卢瑟福背散射/沟道技术 (RBS/Channelling)、同步辐射X射线衍射 (SR-XRD)和超导量子干涉仪 (SQUID), 研究注入温度和退火对样品的晶格损伤、结构及磁性的影响. 研究表明: 样品注入区损伤随注入温度升高而降低; 低温253 K注入样品中, SR-XRD未检测到新相, Fe离子分布于Zn位, ZnO (0002) 峰右侧肩峰可能属于Zn_1-xFe_xO, 5 K下测试样品不具有铁磁性; 623 K注入和823 K真空退火 (253 K注入) 样品中形成α和γ相金属Fe, 5 K下样品具有明显的剩磁和矫顽力, 零场冷却和场冷却 (ZFC/FC) 曲线和300 K下的磁滞回线显示纳米Fe颗粒具有超顺磁性. Fe离子注入ZnO的磁性源于第二相α-Fe和γ-Fe. 关键词： 离子注入 ZnO 同步辐射X射线衍射 超顺磁性