Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films |
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Authors: | Wang Changzhou Zhai Jiwei Song Zhitang Shang Fei Yao Xi |
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Institution: | (1) Department of Material Science and Engineering, Inha University, 253 Yonghyeon-dong, Incheon, 402-751, Republic of Korea; |
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Abstract: | Phase-change behavior in Si/Sb80Te20 nanocomposite multilayer films were investigated by utilizing in situ resistance measurements. It was found that the crystallization
temperature increased firstly with increasing Si layer thickness within the multilayer films, and then remained almost unchanged
at 170°C. The multilayer films have the merits of both good thermal stability and fast phase-change speed. An increase in
crystallization temperature by around 95°C was observed for the multilayer films when the Sb80Te20 layer thickness was reduced to 3 nm. Cross-sectional transmission electron microscopy (TEM) observations revealed that Si/Sb80Te20 nanocomposite multilayer films had layered structures with clear interfaces. The reversible phase change between set and
reset states was verified in phase-change random access memory (PCRAM) cell based on Si (1 nm)/Sb80Te20 (5 nm)]17 multilayer film. |
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