Contrast Adaptation Decreases Complexity in Retinal Ganglion Cell Spike Train

The difference in temporal structures of retinal ganglion cell spike trains between spontaneous activity and firing activity after contrast adaptation is investigated. The Lempel-Ziv complexity analysis reveals that the complexity of the neural spike train decreases after contrast adaptation. This implies that the behaviour of the neuron becomes ordered, which may carry relevant information about the external stimulus. Thus, during the neuron activity after contrast adaptation, external information could be encoded in forms of some certain patterns in the temporal structure of spike train that is significantly different, compared to that of the spike train during spontaneous activity, although the firing rates in spontaneous activity and firing activity after contrast adaptation are sometime similar.     

Flat Supercontinuum Generation at 1550 nm in a Dispersion-Flattened Microstructure Fibre Using Picosecond Pulse

The generation of a flat supercontinuum of over 80nm in the 1550nm region by injecting 1.6ps 10 GHz repetition rate optical pulses into an 80-m-long dispersion-flattened microstructure fibre is demonstrated. The fibre has small normal dispersion with a variation smaller than 1.5 （ps·nm^-1·km^-1） between 1500 and 1650nm. The generated supercontinuum ranging from 1513 to 1591 nm has the flatness of ±1.5 dB and it is not so flat in the range of several nanometres around the pump wavelength 1552nm. Numerical simulation is also used to study the effect of optical loss, fibre parameters and pumping conditions on supercontinuum generation in the dispersion-flattened microstructure fibre, and can be used for further optimization to generate flat broad spectra.     

Electronic Structure of Si1-xⅣx/Si Superlattices on Si （001）

We have preformed systematical ab initio studies of the structural and electronic properties of short-period Si1-xⅣx/Si （x = 0.125, 0.25, 0.5, Ⅳ=Ge, Sn） superlattices （SLs） grown along the [001] direction on bulk Si. The present calculations reveal that the Si0.875Ge0.125/Si, Si0.75Ge0.25/Si and Si0.875Sn0.125/Si are the F-point direct bandgap semiconductors. The technological importance lies in the expectation that the direct gap Si1-xⅣx/Si SLs may be used as components in integrated optoelectronic devices, in conjunction with the already well-established and highly advanced silicon technology.     

Hydrogen Passivation Effect on Enhanced Luminescence from Nanocrystalline Si/SiO2 Multilayers

Nanocrystalline Si/SiO2 multilayers are prepared by thermally annealing amorphous Si/SiO2 stacked structures. The photoluminescence intensity is obviously enhanced after hydrogen passivation at various temperatures. It is suggested that the hydrogen trapping and detrapping processes at different temperatures strongly influence the passivation effect. Direct experimental evidence is given by electron spin resonance spectra that hydrogen effectively reduces the nonradiative defect states existing in the Si nanocrystas/SiO2 system which enhances the radiative recombination probability. The luminescence characteristic shows its stability after hydrogen passivation even after aging eight months.     

Electrical Characterization of Metal-Insulator-Metal Capacitors with Atomic-Layer-Deposited HfO2 Dielectrics for Radio Frequency Integrated Circuit Application

Metal-insulator-metal （MIM） capacitors with atomic-layer-deposited HfO2 dielectric and TaN electrodes are investigated for rf integrated circuit applications. For 12nm HfO2, the fabricated capacitor exhibits a high capacitance density of 15.5fF/μm2 at 100kHz, a small leakage current density of 6.4 × 10^-9 A/cm^2 at 1.8V and 125℃, a breakdown electric field of 2.6 MV//cm as well as voltage coefficients of capacitance （VCCs） of 2110ppm/V^2 and -824 ppm/V at 100kHz. Further, it is deduced that the conduction mechanism in the high field range is dominated by the Poole-Frenkel emission, and the conduction mechanism in the low field range is possibly related to trap-assisted tunnelling. Finally, comparison of various HfO2 MIM capacitors is present, suggesting that the present MIM capacitor is a promising candidate for future rf integrated circuit application.     

喷雾热解法制备红色发光粉LiEu(SiO2)1/6W2O8的研究

采用喷雾热解法制备红色荧光粉LiEu(SiO₂)_1/6W₂O₈。研究了反应温度、前驱体溶液浓度、载气流速对实验结果的影响。通过扫描电镜、X射线衍射、激发和发射光谱对所制样品进行了研究,发现样品颗粒呈实心类球形、结晶度好、表面光滑、发光强度较高、粒径平均1.5μm左右且分布较窄。该类荧光粉激发主峰位于396nm,发射主峰位于615nm。LiEu(SiO₂)_1/6W₂O₈发光的色坐标为:x=0.667 9,y=0.3310,与NTSC的红色标准基本一致,该荧光粉色纯度非常高,适用于制造紫光芯片激发的白光LED。用喷雾热解法制备红色荧光粉LiEu(SiO₂)_1/6W₂O₈的研究尚未见报道。     

Kerr介质中光场与Ⅴ型三能级原子依赖强度耦合相互作用系统的光场压缩

利用全量子理论,研究了Kerr介质中单模光场与v型三能级原子依赖强度耦合的相互作用系统中光场的压缩效应.采用数值计算的方法讨论了Kerr介质与辐射场的耦合系数x和初始场平均光子数对光场压缩的影响.结果表明:Kerr效应对光场的压缩起着不同程度的减弱作用,适当大小的初始场平均光子数有利于光场的压缩.     

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HL-2A装置激光吹气系统采用了全新自动控制的设计方法,实现了杂质注入量、靶片位移以及激光器被触发的时刻的精确自动控制.运行结果表明,该系统能把杂质的注入量控制在适当的水平,既不对等离子体约束产生影响,又便于光谱测量和杂质粒子输运研究.给出了激光吹气系统的设计,以及初步的实验结果.     

扫描相机标定脉冲信号位置的确定及噪声处理

 扫描相机标定数据处理中的一个关键问题是如何准确确定脉冲信号的位置，实验数据的信噪比和脉冲信号位置的定义方法都会对标定结果的准确性产生影响。采用了取半高宽的方法来确定扫描相机标定脉冲信号的位置，在信噪比比较高 （大于100） 的情况下，该方法确定标定信号的位置可以达到亚像素水平。对于信噪比比较低 (小于10) 的实验数据，先采用快速傅里叶变换方法对其进行滤波，通过滤波可以极大地抑制噪声信号的影响，然后采用“半高宽法”确定脉冲信号的位置，最后得出可信的标定结果。当扫描相机定在0.3 ns的扫描档时，通过该方法得到的扫描速度为0.214 ps/pixel,扫描不确定度为0.002 9 ps/pixel,拟合线性相关系数为0.999 7。     

双间隙输出腔开放腔的高频特性分析

 建立了S波段相对论速调管放大器双间隙输出腔开放腔的3维模型。采用时域有限差分法，通过监测激励电流源的响应计算了该双间隙输出腔的谐振频率、有载Q值、场分布以及特性阻抗，并分析了腔体结构尺寸对谐振频率、有载Q值和特性阻抗的影响。研究表明：腔体半径对开放腔的谐振频率影响很大，耦合孔尺寸对腔体谐振频率的影响较小；随着耦合孔张角增加，有载Q值逐渐减小；随着腔体半径增大、间隙的减小，腔体特性阻抗降低。研究结果可为S波段强流相对论速调管放大器双间隙输出腔的设计提供理论依据。