基于双边带调制的频率扫描干涉型激光测距技术

提出并论证了一种基于双边带调制的双扫频干涉测距技术,利用电-光双边带调制产生的-1和+1阶边带分别作为扫描方向相反的两个扫频信号,在接收端各获得一个频率与相对距离相关的拍频信号,通过将这两个拍频信号相乘的方式来减小由光路中扰动引起的测量误差.利用Optisystem软件进行系统仿真,结果表明,该方法能够有效抑制由于光路中扰动产生的测量误差.设计了实验验证系统,在光路中引入小幅振动作为扰动时,该方法对扰动的抑制比超过14dB,有效地提升了测距准确度.     

控制氧化层对双势垒纳米硅浮栅存储结构性能的影响

在等离子体增强化学气相沉积(PECVD)系统中,利用逐层淀积非晶硅(a-Si)和等离子体氧化相结合的方法制备二氧化硅(SiO₂)介质层.电容电压(C-V)和电导电压(G-V)测量结果表明：利用该方法在低温(250 ℃)条件下制备的SiO₂介质层均匀致密,其固定氧化物电荷和界面态密度分别为9×10¹¹cm^-2和2×10¹¹cm^-2·eV^-1,击穿场强达4.6 MV/cm,与热氧化形成的SiO₂介质层的性质相当.将该SiO₂介质层作为控制氧化层应用在双势垒纳米硅(nc-Si)浮栅存储结构中,通过调节控制氧化层的厚度,有效阻止栅电极与nc-Si之间的电荷交换,延长存储时间,使存储性能得到明显改善. 关键词： 等离子体氧化 二氧化硅 纳米硅 控制氧化层     

Resonant Tunnelling and Storage of Electrons in Si Nanocrystals within a-SiNx/nc-Si/a-SiNx Structures

The a-SiNx/nanocrystalline silicon （nc-Si）/a-SiNx sandwiched structures with asymmetric double-barrier are fabricated in a plasma enhanced chemical vapour deposition （PECVD） system on p-type Si substrates. The nc-Si layer in thickness 5nm is fabricated from a hydrogen-diluted silane gas by the layer-by-layer deposition technique. The thicknesses of tunnel and control SiNx layers are 3nm and 20nm, respectively. Frequency-dependent capacitance spectroscopy is used to study the electron tunnelling and the storage in the sandwiched structures. Distinct frequency-dependent capacitance peaks due to electrons tunnelling into the nc-Si dots and capacitance-voltage （C - V） hysteresis characteristic due to electrons storage in the nc-Si dots are observed with the same sample. Moreover, conductance peaks have also been observed at the same voltage region by conductance-voltage （G - V） measurements. The experimental results demonstrate that electrons can be loaded onto nc-Si dots via resonant tunnelling and can be stored in our a-SiNx/nc-Si/a-SiNx structures.     

一类带线搜索的非单调信赖域新算法

结合非单调信赖域方法,和非单调线搜索技术,提出了一种新的无约束优化算法.信赖域方法的每一步采用线搜索,使得迭代每一步都充分下降加快了迭代速度.在一定条件下,证明了算法具有全局收敛性和局部超线性.收敛速度.数值试验表明算法是十分有效的.     

激发频率对高氢稀释下纳米晶硅薄膜生长特性的影响

利用等离子体增强化学气相沉积技术,在高氢稀释条件下,研究不同激发频率对纳米晶硅薄膜生长特性的影响.剖面透射电子显微镜(TEM)分析结果显示,不同激发频率下制备的纳米晶硅薄膜晶化区均呈锥状结构生长,但13.56 MHz激发频率下制备的纳米晶硅薄膜最初生长阶段存在非晶态孵化层,即纳米晶硅薄膜的形成经历了由非晶态孵化层到晶态结构层的转变.而高激发频率(40.68 MHz)下硅纳米晶则能直接在非晶态衬底上生长形成.Raman谱和红外吸收谱测量结果表明高激发频率(40.68 MHz)下制备的纳米晶硅薄膜不但具有较高     

日-地系拉格朗日L1点太阳观测器热设计

对将运行于日-地L1点的太阳观测器进行了热设计,重点论述了日-地L1点的轨道外热流计算和Lyman α日冕仪（LACI）反射镜M2光阱、Lyman α日冕成像仪（LADI）滤光片组件、CCD组件、电箱、观测器主体等部分的热设计方案。通过在探测器对日面设置集热板,将观测器的主动加热功耗降低了73％;选用预埋热管的设计方案解决了对日定向观测导致的框架温差问题。仿真分析结果表明,在对日高温工作、对日低温工作、低温存储、轨道转移等4个极端工况下,观测器各组件温度均满足指标要求。该热设计方案以较低的加热功耗,解决了太阳观测器在轨工作阶段的散热、轨道转移阶段的保温等问题,满足CCD焦面工作温度＜-50℃的要求。     

High-accuracy optical time delay measurement in fiber link [Invited]

Optoelectronic components and subsystems such as optically controlled phased array antennas, distributed radar networks, interferometric optical fiber hydrophones, and high-speed optoelectronic chips demand highaccuracy optical time delay measurement with large measurement range and the capability for single-end and wavelength-dependent measurement. In this paper, the recent advances in the optical time delay measurement of a fiber link with high accuracy are reviewed. The general models of the typical time delay measurement technologies are established with the operational principle analyzed. The performance of these techniques is also discussed.     

氢键构筑的二维网状结构镍配合物[Ni(en)2(dpas)2]的合成、晶体结构及电化学性质

A new 2D Hydrogen-bonded network complex [Ni(en)2(dpas)2] (Nadpas=sodium diphenylamine sulphonic acid salt,en=ethanediamine) has been synthesized in aqueous solution,and characterized by elemental analysis,IR. The crystal structure was determined by single-crystal X-ray diffraction. The complex crystallizes in space group P21/c,with cell parameters a=0.605 6(5)nm,b=1.448 1(5) nm,c=1.711 9(5)nm,β=93.257(5)°,and V=1.498 9(14) nm3,Dc=1.497 g·cm-3,Z=2,F (000)=708,R=0.027 7,wR=0.072 5. The crystal structure shows that the nickel atom is coordinated with four nitrogen atoms from the two en and two oxygen atoms from two dpas to form a mononuclear complex. Furthermore,the adjacent complex units are extended into a 2D supramolecular network through hydrogen bonds.     

一类约束优化问题的非单调信赖域算法

本文就一类等式约束优化问题,结合当前比较流行的非单调技术,提出了一类新的求解等式约束优化的非单调信赖域算法.其非单调程度由算法自适应控制,计算预测下降量和实际下降量的比值时,采用前m(k)个点的信息,这不同于以前在计算预测下降量和实际下降量的比值时,仅仅采用当前-个点的信息.在没有正则性条件的假设下我们证明了算法是有定义的.并且通过对不同情况的讨论证明了算法的全局收敛性.基本的数值试验表明算法是有效的,且说明提出的非单调信赖域算法比单调信赖域算法有效.