排气全燃型联合循环设计点性能简明估计公式

排气全燃型联合循环设计点性能简明估计公式蔡睿贤（中国科学院工程热物理研究所北京１０Ｏ０８０）关键词：排气全燃型联合循环，热力分析主要符号表Ｈｕ燃料热值Ｌ燃料理论空气量ｌ比功Ｐ单位能量价格Ｒ燃气轮机与蒸汽轮机的功率比α过量空气系数β摩尔燃料系数△增量η...     

对珠算穿梭式加减法的一点改进

珠算穿梭式加减法，是珠算界学者、专家在总结传统加减算法的基础上，根据珠算自身的性质，而改进推出的一种新的珠算加减打法，它不仅改进了传统加减法中手指逆向(自右向左)空回的缺陷，也大大地提高了珠算加减法的运算速度。但是，经过几年的实践，广大珠算爱好者们发现，珠算穿梭式加减法在进行逆向加减运算时，     

12Cs新能级的观测

通过¹¹²Sn(¹²C,p2n)反应产生了处于高激发能高角动量态的¹²¹Cs核.用在束γ技术对其退激γ进行了测量和研究.在πh11/2,ΔJ=2和πg9/2,ΔJ=1带上各观测到了两个新能级.     

YBa2—xMxCu3O7—δ（M=Ca,Sr）的晶体结构与超导电性

通过对正交单相 YBa_(2-x)M_xCu_3O_(7-δ)(M=Ca,x=0.05,0.1,0.25;M=Sr,x=0.1,1.0)样品的晶格参数、超导电性、氧含量以及 Hall 系数的测量,发现随着替代元素含量的增加,体系氧含量基本不变,正交化程度减弱,四方化程度增强,Cu-O 面上的载流子浓度减少,超导中点转变温度(T_c)呈下降的趋势.分析表明,四方化程度增强与局域结构扭曲密切相关;Cu-O 面上的载流子浓度对高 T_c 的超导电性影响很大.     

LIE ALGEBRA K$(n,\mu _j,m)$ OF CARTAN TYPE OF CHARACTERISTIC p=2

Let $K(n,\mu _j,m),n=2r+1$,denote the Lie algebra of characteristic p=2,which is defined in [4].In the paper the restrictability of $K(n,\mu _j,m)$ is discussed and it is proved that,when $r\equiv 1(mod 2)$ and $r>1,I(ad f)=n+1$ if and only if $0\neq f \in $. Then the invariance of some filtrations of K(n,\mu,m) and the condition of isomorphism of K(n,\mu _i,m) and K(n',\mu _j ^',m') are obtained.Besides,the generators and the derivation algebra of K(n,\mu _i,m) are discussed.The results also hold,when $r\equiv 0 (mod 2)$ and r>0.     

对Schapery本构方程改进的几点尝试

Schapery本构关系能够很好地描述材料的粘弹性变形,但其中存在着下面几个问题:(1)当材料的蠕变变形含有粘塑性变形时,直接引用Schapery本构方程是不准确的;(2)材料的蠕变一般有损伤产生,Scbapery本构方程不能体现损伤特征;(3)理论上讲,无论载荷的突变量多大,粘弹性变形总有一个时间过程,这一点与Schapery本构方程不一致;(4)Schapery本构方程的参数确定是由曲线来拟合,这种方法有很大的主观性,本文介绍了Schapery本构方程的推导过程,针对上述问题提出了一些修改意见。     

电感储能功率调节装置小型化设计

介绍了电感储能功率调节装置的小型化结构设计，以及装置在高电压大电流条件下绝缘性能的优化设计。在以电容器（2μF、充电电压62kV)为初始能源条件下，在80Ω电阻负载上获得电压大于700kV、脉宽大于100ns、前沿小于50ns的脉冲输出，性能稳定可靠。     

Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering

Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.