基于模块开发控制的一个软件可靠性分配模型

提出了一个软件可靠性分配模型，该模型在保证系统开发费用最低的前提下，将可靠性指标分配到各模块中，此外还运用了遗传算法来搜索模型的最优解，实践表明，这是一个有效的途径。     

Growth of high quality InSb thin films on GaAs substrates by molecular beam epitaxy method with AlInSb/GaSb as compound buffer layers

A series of In Sb thin films were grown on Ga As substrates by molecular beam epitaxy(MBE).Ga Sb/Al In Sb is used as a compound buffer layer to release the strain caused by the lattice mismatch between the substrate and the epitaxial layer,so as to reduce the system defects.At the same time,the influence of different interface structures of Al In Sb on the surface morphology of buffer layer is explored.The propagation mechanism of defects with the growth of buffer layer is compared and analyzed.The relationship between the quality of In Sb thin films and the structure of buffer layer is summarized.Finally,the growth of high quality In Sb thin films is realized.     

Signatures of strong interlayer coupling in γ-InSe revealed by local differential conductivity

Interlayer coupling in layered semiconductors can significantly affect their optoelectronic properties. However, understanding the mechanisms behind the interlayer coupling at the atomic level is not straightforward. Here, we study modulations of the electronic structure induced by the interlayer coupling in the γ-phase of indium selenide (γ-InSe) using scanning probe techniques. We observe a strong dependence of the energy gap on the sample thickness and a small effective mass along the stacking direction, which are attributed to strong interlayer coupling. In addition, the moiré patterns observed in γ-InSe display a small band-gap variation and nearly constant local differential conductivity along the patterns. This suggests that modulation of the electronic structure induced by the moiré potential is smeared out, indicating the presence of a significant interlayer coupling. Our theoretical calculations confirm that the interlayer coupling in γ-InSe is not only of the van der Waals origin, but also exhibits some degree of hybridization between the layers. Strong interlayer coupling might play an important role in the performance of γ-InSe-based devices.     

扩展苯基衍生物分子器件的电子输运的理论研究

通过结合杂化密度泛函和前线轨道理论与弹性散射格林函数方法研究了三种苯基衍生物分子器件的电子输运性质. 基于杂化密度泛函方法计算扩展分子电子结构的基础上, 计算了苯基衍生物三分子结的输运性质. 计算结果表明, 在低偏压下, 电流与电压呈线性变化; 分子结的电阻的对数与苯环的数目呈线性增加关系.     

第一性原理研究有机分子晶体中电声子耦合的压强效应

电声子耦合系数是决定有机分子体系电荷传导过程的最重要因素之一,研究电声子耦合对理解有机分子晶体中的本征电荷传输机制有重要的意义.从实验得到的晶体结构出发,使用密度泛函理论计算出电子结构和声子模式,再投影到紧束缚模型,通过数值拟合和有限差分,计算出各个声子模的电声子耦合系数,进一步还可以研究随压强变化的关系.以萘晶体为例,计算表明,声子频率随压强增加,但电声耦合强度随压强增大而减小,对迁移率起到促进作用.     

Observation of F = 2 Spinor Bose-Einstein Condensation in a Magnetic Field

Multiple-component Bose-Einstein condensation has been observed in a magnetic field generated by a controllable magnetic quadrupole-Ioffe-configuration trap. Different distributions of atoms in spinor Bose Einstein condensates are created by changing the time difference of switching-off current in quadrupole-Ioffe-configuration coils and bias coils of the magnetic trap. A simple analysis is carried out to explain some phenomena of the experiment.     

石墨炔与锡烯层状体系的形变势和电声耦合及载流子传输理论研究

我们对sp + sp²杂化的碳同素异形体—石墨炔,以及锡烯等层状体系的电子结构、形变势、电声耦合和电荷输运性质进行了回顾。有些二维石墨炔具有类似石墨烯的狄拉克锥,同时石墨炔电子结构可通过将其沿不同方向裁剪成不同宽度一维纳米带来调节。采用玻尔兹曼输运方程和形变势近似,结合第一性原理计算,我们预测石墨炔电荷载流子室温迁移率可达10⁴–10⁵ cm²·V^-1·s^-1,尤其6, 6, 12-石墨炔,因有两个狄拉克锥及比石墨烯弱的电声耦合,其室温迁移率甚至能高于石墨烯。因此具有独特电子结构和高迁移率的石墨炔能成为继石墨烯之后未来的纳米电子器件材料。此外我们着重分析了形变势方法的适用性：密度泛函微扰理论和瓦尼尔插值技术能精确计算任意波矢和模式的声子对载流子散射,该方法在石墨烯和石墨炔上的运用表明二维平面碳材料中对载流子输运起主导作用的是长波长纵声学声子散射,因而形变势方法是适用的;但通过对锡烯等二维非平面buckling结构的材料声子散射和迁移率的计算,发现此类不具备σ_h对称性的材料有较强的面外声子散射和横声学声子谷间散射,使得常用的形变势失效。     

光温双控太赫兹波调制特性研究

基于多频带金属开口谐振环结构,利用GaAs材料的光敏特性和VO₂薄膜的热致相变特性,设计了一种既能实现光控又能实现温控的太赫兹(Terahertz, THz)波调制器,研究了光强和薄膜温度对 THz波调制特性的影响。结果表明,随着光强的增加,谐振频率均出现蓝移且谐振强度减小,当光强达到0.2 μJ·cm-2时,第二个谐振点(0.52 THz)蓝移了0.14 THz,透射幅度增加达50%;随着VO₂温度增加至相变温度以上,THz波透射幅度急剧减小,在0.63 THz处透射幅度减小达45.5%;当光强和温度同时控制时,随着光强和温度的增加,谐振点频率蓝移且谐振点处的THz波透射幅度增加,但在温度超过相变温度后,则温度控制起主导作用。设计的THz波调制器能通过光控和温控实现对THz波的明显调制效果,可为实现多功能的THz波功能器件的设计及应用提供参考。     

渐近Fejer点上的Lagrange插值多项式的逼近阶

本文考虑渐近 Fejer 点上 Lagrange 插值多项式在 Jordan 区域 D 边界上一致逼近及平均逼近 A(D)中的函数,得到了逼近阶的估计式。     

聚乙炔的非线性光学效应

本文从SSH模型出发,用三阶含时微扰研究了一级体系的非线性光学系数.说明了电子-晶格耦合对非线性极化的影响.对聚乙炔的三次谐波产生系数给出了与实验相符的结果.